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J. Semicond. > 2008, Volume 29?>?Issue 2?> 210-213

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Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si(111) Substrates

Qin Lixia, Xue Chengshan, Zhuang Huizhao, Yang Zhaozhu, Chen Jinhua and Li Hong

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Abstract: GaN nanorods are successfully synthesized on Si(111) substrates with magnetron sputtering through ammoniating Ga2O3/Co films at 950℃.X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and Fourier-transform infrared spectroscopy are used to characterize the samples.The results demonstrate that the nanorods are single-crystal GaN with a hexagonal wurtzite structure and possess relatively smooth surfaces.The growth mechanism of GaN nanorods is also discussed.

Key words: nanorods, crystal growth, scanning and transmission electron microscopy

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    Received: 18 August 2015 Revised: 24 September 2007 Online: Published: 01 February 2008

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      Qin Lixia, Xue Chengshan, Zhuang Huizhao, Yang Zhaozhu, Chen Jinhua, Li Hong. Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si(111) Substrates[J]. Journal of Semiconductors, 2008, 29(2): 210-213. ****Qin L X, Xue C S, Zhuang H Z, Yang Z Z, Chen J H, Li H. Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si(111) Substrates[J]. J. Semicond., 2008, 29(2): 210.
      Citation:
      Qin Lixia, Xue Chengshan, Zhuang Huizhao, Yang Zhaozhu, Chen Jinhua, Li Hong. Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si(111) Substrates[J]. Journal of Semiconductors, 2008, 29(2): 210-213. ****
      Qin L X, Xue C S, Zhuang H Z, Yang Z Z, Chen J H, Li H. Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si(111) Substrates[J]. J. Semicond., 2008, 29(2): 210.

      Synthesis and Characterization of GaN Nanorods by Ammoniating Ga2O3/Co Films Deposited on Si(111) Substrates

      • Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China

      • Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China

      • Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China

      • Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China

      • Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China

      • Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-09-03
      • Revised Date: 2007-09-24
      • Published Date: 2008-01-31

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