Chin. J. Semicond. > 1995, Volume 16?>?Issue 3?> 206-211

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2257 Times PDF downloads: 1216 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 March 1995

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗證碼錯誤
      魏麗瓊，程玉華，孫玉秀，閻桂珍，李映雪，武國英，王陽元. 硅膜厚度和背柵對SIMOX／SOI薄膜全耗盡MOSFET特性影響的研究[J]. 半導體學報(英文版), 1995, 16(3): 206-211.
      Citation:
      魏麗瓊，程玉華，孫玉秀，閻桂珍，李映雪，武國英，王陽元. 硅膜厚度和背柵對SIMOX／SOI薄膜全耗盡MOSFET特性影響的研究[J]. 半導體學報(英文版), 1995, 16(3): 206-211.

      • Received Date: 2015-08-19

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return