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J. Semicond. > 2008, Volume 29?>?Issue 9?> 1703-1707

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An Electrostatic MEMS Actuator with Large Displacement Under Low Driving Voltage

Ming Anjie, Li Tie, Zhou Ping and Wang Yuelin

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Abstract: A comb-drive actuator for lateral movement of over 100μm under low driving voltage is designed.Side stability is analyzed to improve the performance of the actuator.According to the analysis,a comb-drive actuator with small comb gap,high-stiffness-ratio prebent suspension beams,non-initial overlap,and linear-engaged-length comb teeth is proposed and the parameters of the actuator are derived.Experiments indicate that the actuator resonates at 573Hz with a Q factor of 35.88 and reaches a maximum displacement of over 100μm at a driving voltage of 71V,which fulfills the design requirements and matches the analytical value to within 2.1%.

Key words: comb-drive actuator, side stability, MEMS

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    Received: 18 August 2015 Revised: 26 March 2008 Online: Published: 01 September 2008

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      Ming Anjie, Li Tie, Zhou Ping, Wang Yuelin. An Electrostatic MEMS Actuator with Large Displacement Under Low Driving Voltage[J]. Journal of Semiconductors, 2008, 29(9): 1703-1707. ****Ming A J, Li T, Zhou P, Wang Y L. An Electrostatic MEMS Actuator with Large Displacement Under Low Driving Voltage[J]. J. Semicond., 2008, 29(9): 1703.
      Citation:
      Ming Anjie, Li Tie, Zhou Ping, Wang Yuelin. An Electrostatic MEMS Actuator with Large Displacement Under Low Driving Voltage[J]. Journal of Semiconductors, 2008, 29(9): 1703-1707. ****
      Ming A J, Li T, Zhou P, Wang Y L. An Electrostatic MEMS Actuator with Large Displacement Under Low Driving Voltage[J]. J. Semicond., 2008, 29(9): 1703.

      An Electrostatic MEMS Actuator with Large Displacement Under Low Driving Voltage

      • State Key Laboratory of Transducer Technology,National Key Laboratory of Microsystem Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Graduate University of the Chinese Academy of Sc

      • State Key Laboratory of Transducer Technology,National Key Laboratory of Microsystem Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Transducer Technology,National Key Laboratory of Microsystem Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Transducer Technology,National Key Laboratory of Microsystem Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-30
      • Revised Date: 2008-03-26
      • Published Date: 2008-09-03

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