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J. Semicond. > 2008, Volume 29?>?Issue 7?> 1357-1359

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Current Characteristics of High-Electron-Mobility Transistors Driven by a Terahertz Field and Magnetic Field

Wang Limin and Cao Juncheng

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Abstract: When a high-electron mobility transistor (HEMT) is driven by a terahertz (THz) field and magnetic field,plasma oscillation appears in the channel of the HEMT.We have investigated the effect of the THz field and magnetic field on the current characteristics of the HEMTs.The results show that the peaks of the responsivities of the HEMT exhibit blueshift as the magnetic field increases.We may tune the frequencies of the plasma oscillation by changing the magnetic field.

Key words: high-electron mobility transistor, terahertz field, magnetic field, responsivity

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    Received: 18 August 2015 Revised: 20 December 2007 Online: Published: 01 July 2008

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      Wang Limin, Cao Juncheng. Current Characteristics of High-Electron-Mobility Transistors Driven by a Terahertz Field and Magnetic Field[J]. Journal of Semiconductors, 2008, 29(7): 1357-1359. ****Wang L M, Cao J C. Current Characteristics of High-Electron-Mobility Transistors Driven by a Terahertz Field and Magnetic Field[J]. J. Semicond., 2008, 29(7): 1357.
      Citation:
      Wang Limin, Cao Juncheng. Current Characteristics of High-Electron-Mobility Transistors Driven by a Terahertz Field and Magnetic Field[J]. Journal of Semiconductors, 2008, 29(7): 1357-1359. ****
      Wang L M, Cao J C. Current Characteristics of High-Electron-Mobility Transistors Driven by a Terahertz Field and Magnetic Field[J]. J. Semicond., 2008, 29(7): 1357.

      Current Characteristics of High-Electron-Mobility Transistors Driven by a Terahertz Field and Magnetic Field

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology, Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology, Shanghai 200050,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-13
      • Revised Date: 2007-12-20
      • Published Date: 2008-08-01

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