Abstract: We apply a magnetic field B along the axis of an n-type doped weakly-coupled GaAs/AlAs superlattice (SL) to investigate the carrier transport in a low electric field.An abnormal enhancement of the current intensity by perpendicular B is observed for the ground state transport.Electron tunneling or hopping conduction via elastic scattering at low Bswitches over into resonant tunneling at higher B because in the latter case the electrons only partially occupy the first Landau level.

Key words: GaAs/AlAs superlattices,  vertical transport under magnetic field,  tunneling circuit