Chin. J. Semicond. > 2007, Volume 28?>?Issue 3?> 444-447

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Analysis of the Fabrication of a Surface Emitting Laser by the Bonding Method

He Guorong, Zheng Wanhua, Qu Hongwei, Yang Guohua, Wang Qing, Wu Xuming, Cao Yulian and Chen Lianghui

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Abstract: InGaAsP/InP active regions were single-fused or double-fused to GaAs/AlAs DBRs by hydrophobic bonding.The mechanical,optical,and electrical characteristics of the bonded interfaces were investigated through SEM,reflection spectrum,PL spectrum,and I-Vcurves.Good performance indicates an excellent interface.This makes it possible for the fabrication of long-wavelength surface emitting lasers by the bonding technique.

Key words: bonding, surface emitting laser, photoluminescence spectrum

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    Received: 18 August 2015 Revised: 29 September 2006 Online: Published: 01 March 2007

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      He Guorong, Zheng Wanhua, Qu Hongwei, Yang Guohua, Wang Qing, Wu Xuming, Cao Yulian, Chen Lianghui. Analysis of the Fabrication of a Surface Emitting Laser by the Bonding Method[J]. Journal of Semiconductors, 2007, 28(3): 444-447. ****He G R, Zheng W H, Qu H W, Yang G H, Wang Q, Wu X M, Cao Y L, Chen L H. Analysis of the Fabrication of a Surface Emitting Laser by the Bonding Method[J]. Chin. J. Semicond., 2007, 28(3): 444.
      Citation:
      He Guorong, Zheng Wanhua, Qu Hongwei, Yang Guohua, Wang Qing, Wu Xuming, Cao Yulian, Chen Lianghui. Analysis of the Fabrication of a Surface Emitting Laser by the Bonding Method[J]. Journal of Semiconductors, 2007, 28(3): 444-447. ****
      He G R, Zheng W H, Qu H W, Yang G H, Wang Q, Wu X M, Cao Y L, Chen L H. Analysis of the Fabrication of a Surface Emitting Laser by the Bonding Method[J]. Chin. J. Semicond., 2007, 28(3): 444.

      Analysis of the Fabrication of a Surface Emitting Laser by the Bonding Method

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-08-25
      • Revised Date: 2006-09-29
      • Published Date: 2007-03-06

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