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J. Semicond. > 2008, Volume 29?>?Issue 3?> 414-417

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Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz

Cheng Wei, Jin Zhi, Liu Xinyu, Yu Jinyong, Xu Anhuai and Qi Ming

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Abstract: Polyimide passivation and planarization process techniques for high speed InP/InGaAs single heterojunction bipolar transistors (SHBTS) are developed.A maximum extrapolated ft of 210GHz is achieved for the SHBT with 1.4μm×15μm emitter area at VCE=1.1V and IC=335mA.This device is suitable for high speed and low power applications,such as ultra high speed mixed signal circuits and optoelectronic communication ICs.

Key words: InP, HBT, polyimide, planarization

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    Received: 18 August 2015 Revised: 22 October 2007 Online: Published: 01 March 2008

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      Cheng Wei, Jin Zhi, Liu Xinyu, Yu Jinyong, Xu Anhuai, Qi Ming. Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz[J]. Journal of Semiconductors, 2008, 29(3): 414-417. ****Cheng W, Jin Z, Liu X Y, Yu J Y, Xu A H, Qi M. Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz[J]. J. Semicond., 2008, 29(3): 414.
      Citation:
      Cheng Wei, Jin Zhi, Liu Xinyu, Yu Jinyong, Xu Anhuai, Qi Ming. Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz[J]. Journal of Semiconductors, 2008, 29(3): 414-417. ****
      Cheng W, Jin Z, Liu X Y, Yu J Y, Xu A H, Qi M. Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz[J]. J. Semicond., 2008, 29(3): 414.

      Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-09-20
      • Revised Date: 2007-10-22
      • Published Date: 2008-02-28

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