香蕉久久这里只有精品-91国产自拍免费视频-免费A级毛片无码专区网站-无码八A片人妻少妇久久-特黄三级又长又粗又爽-国产精品人成在线播放-国产男女猛烈无遮挡性视频网站-丰满五十路熟女高清免费视频-欧美日韩午夜激情福利

J. Semicond. > 2008, Volume 29?>?Issue 11?> 2286-2291

PAPERS

Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding

Lao Yanfeng, Cao Chunfang, Wu Huizhen, Cao Meng, Liu Cheng, Xie Zhengsheng and Gong Qian

+ Author Affiliations

PDF

Abstract: We designed and fabricated a vertical-cavity surface-emitting laser (VCSEL) that consisted of an InP-based active layer with InAsP/InGaAsP strain-compensated multi-quantum wells,SiO2/TiO2 dielectric film,and GaAs/AlAs semiconductor distributed Bragg reflectors (DBRs).The InP-based active layers and GaAs-based DBRs were integrated using wafer-direct bonding techniques.Then,devices were successfully fabricated upon related device processing such as current-aperture definition using wet-etching undercut techniques and deposition of dielectric DBR,etc.The threshold current of the VCSEL is 13.5mA and the wavelength of the single mode is 1288.6nm.

Key words: vertical-cavity surface-emitting laser, wafer-direct bonding, tunnel junction

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3559 Times PDF downloads: 1473 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 10 June 2008 Online: Published: 01 November 2008

    Catalog

      Email This Article

      User name:
      Email:*請(qǐng)輸入正確郵箱
      Code:*驗(yàn)證碼錯(cuò)誤
      Lao Yanfeng, Cao Chunfang, Wu Huizhen, Cao Meng, Liu Cheng, Xie Zhengsheng, Gong Qian. Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding[J]. Journal of Semiconductors, 2008, 29(11): 2286-2291. ****Lao Y F, Cao C F, Wu H Z, Cao M, Liu C, Xie Z S, Gong Q. Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding[J]. J. Semicond., 2008, 29(11): 2286.
      Citation:
      Lao Yanfeng, Cao Chunfang, Wu Huizhen, Cao Meng, Liu Cheng, Xie Zhengsheng, Gong Qian. Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding[J]. Journal of Semiconductors, 2008, 29(11): 2286-2291. ****
      Lao Y F, Cao C F, Wu H Z, Cao M, Liu C, Xie Z S, Gong Q. Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding[J]. J. Semicond., 2008, 29(11): 2286.

      Fabrication of InAsP/InGaAsP Quantum-Well 1.3μm VCSELsby Direct Wafer-Bonding

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-04-26
      • Revised Date: 2008-06-10
      • Published Date: 2008-11-11

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return