J. Semicond. > 2008, Volume 29?>?Issue 11?> 2265-2269

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Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD

Ma Tieying, Li Tie, Liu Wenping and Wang Yuelin

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Abstract: A hydrogenated amorphous silicon of different phosphor doping concentrations is fabricated by PECVD.FTIR spectra and TCR of a-Si:H are obtained after annealing at different temperatures and times.The structure and bonding of the film are decided by different annealing conditions,leading to the change in the thermal and electric characteristics.Lu’s model is used to explain the phenomena,and an optimum preparation is attained with a doping ratio of 0.025 and an annealing temperature of 600℃.

Key words: amorphous silicon, annealing, FTIR, temperature coefficient resistance

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    Received: 18 August 2015 Revised: 21 July 2008 Online: Published: 01 November 2008

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      Ma Tieying, Li Tie, Liu Wenping, Wang Yuelin. Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD[J]. Journal of Semiconductors, 2008, 29(11): 2265-2269. ****Ma T Y, Li T, Liu W P, Wang Y L. Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD[J]. J. Semicond., 2008, 29(11): 2265.
      Citation:
      Ma Tieying, Li Tie, Liu Wenping, Wang Yuelin. Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD[J]. Journal of Semiconductors, 2008, 29(11): 2265-2269. ****
      Ma T Y, Li T, Liu W P, Wang Y L. Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD[J]. J. Semicond., 2008, 29(11): 2265.

      Thermal Sensitive Characteristics of Phosphor-Doped Hydrogenated Amorphous Silicon by PECVD

      • College of Optical and Electronic Technology,China Jiliang University,Hangzhou 310018,China

      • State Key Laboratory of Transducer Technology,Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Transducer Technology,Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Transducer Technology,Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-05-11
      • Revised Date: 2008-07-21
      • Published Date: 2008-11-11

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