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J. Semicond. > 2008, Volume 29?>?Issue 2?> 206-209

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A Compensation Mechanism for Semi-Insulating 6H-SiC Doped with Vanadium

Wang Chao, Zhang Yimen, Zhang Yuming, Wang Yuehu, Xu Daqing, Li Zhiqiang, Chen Liqiang, Zhang Jian and Zhang Haiying

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Abstract: A model is presented to describe a compensation mechanism for semi-insulating 6H-SiC grown with the intentional doping of vanadium.Because we found nitrogen to be the principal shallow donor impurity in SiC by secondary ion mass spectroscopy (SIMS) measurements, semi-insulating properties in SiC are achieved by compensating the nitrogen donor with the vanadium deep acceptor level.The presence of different vanadium charge states V3+ and V4+ is detected by electron paramagnetic resonance and optical absorption measurements, which coincides with the results obtained by SIMS measurements.Both optical absorption and low temperature photoluminescence measurements reveal that the vanadium acceptor level is located at 0.62eV below the conduction band in 6H-SiC.

Key words: 6H-SiC, semi-insulating, vanadium doping, compensation, vanadium acceptor level

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    Received: 18 August 2015 Revised: 29 August 2007 Online: Published: 01 February 2008

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      Wang Chao, Zhang Yimen, Zhang Yuming, Wang Yuehu, Xu Daqing, Li Zhiqiang, Chen Liqiang, Zhang Jian, Zhang Haiying. A Compensation Mechanism for Semi-Insulating 6H-SiC Doped with Vanadium[J]. Journal of Semiconductors, 2008, 29(2): 206-209. ****Wang C, Zhang Y M, Zhang Y M, Wang Y H, Xu D Q, Li Z Q, Chen L Q, Zhang J, Zhang H Y. A Compensation Mechanism for Semi-Insulating 6H-SiC Doped with Vanadium[J]. J. Semicond., 2008, 29(2): 206.
      Citation:
      Wang Chao, Zhang Yimen, Zhang Yuming, Wang Yuehu, Xu Daqing, Li Zhiqiang, Chen Liqiang, Zhang Jian, Zhang Haiying. A Compensation Mechanism for Semi-Insulating 6H-SiC Doped with Vanadium[J]. Journal of Semiconductors, 2008, 29(2): 206-209. ****
      Wang C, Zhang Y M, Zhang Y M, Wang Y H, Xu D Q, Li Z Q, Chen L Q, Zhang J, Zhang H Y. A Compensation Mechanism for Semi-Insulating 6H-SiC Doped with Vanadium[J]. J. Semicond., 2008, 29(2): 206.

      A Compensation Mechanism for Semi-Insulating 6H-SiC Doped with Vanadium

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-08-06
      • Revised Date: 2007-08-29
      • Published Date: 2008-01-31

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