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J. Semicond. > 2008, Volume 29?>?Issue 8?> 1570-1574

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A New Hydrodynamic Model Method for Semiconductor Device Simulation

Liu Zhan, Gu Xiaofeng, Yu Zongguang, Hu Xiduo and Zang Jiafeng

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Abstract: The solution using a spline procedure,SADI,and a high-order compact finite difference (HOC) method is presented for the hydrodynamic (HD) model for semiconductor device simulation.We compare the numerical results with two of the most popular simulation methods currently,CGS and Newton-SOR.Our method decreases the number of iterations by 40% and reduces the computation time greatly.

Key words: SADI, high-order compact finite difference, device simulation

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    Received: 18 August 2015 Revised: 31 March 2008 Online: Published: 01 August 2008

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      Liu Zhan, Gu Xiaofeng, Yu Zongguang, Hu Xiduo, Zang Jiafeng. A New Hydrodynamic Model Method for Semiconductor Device Simulation[J]. Journal of Semiconductors, 2008, 29(8): 1570-1574. ****Liu Z, Gu X F, Yu Z G, Hu X D, Zang J F. A New Hydrodynamic Model Method for Semiconductor Device Simulation[J]. J. Semicond., 2008, 29(8): 1570.
      Citation:
      Liu Zhan, Gu Xiaofeng, Yu Zongguang, Hu Xiduo, Zang Jiafeng. A New Hydrodynamic Model Method for Semiconductor Device Simulation[J]. Journal of Semiconductors, 2008, 29(8): 1570-1574. ****
      Liu Z, Gu X F, Yu Z G, Hu X D, Zang J F. A New Hydrodynamic Model Method for Semiconductor Device Simulation[J]. J. Semicond., 2008, 29(8): 1570.

      A New Hydrodynamic Model Method for Semiconductor Device Simulation

      • School of Information Engineering,Jiangnan University,Wuxi 214036,China

      • School of Information Engineering,Jiangnan University,Wuxi 214036,China

      • School of Information Engineering,Jiangnan University,Wuxi 214036,China

      • The 58th Research Institute,China Electronics Technology Group Corporation,Wuxi 214035,China

      • Department of Electronic Engineering,Dongguan University of Technology,Dongguan 523808,China

      • School of Information Engineering,Jiangnan University,Wuxi 214036,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-01-02
      • Revised Date: 2008-03-31
      • Published Date: 2008-08-02

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