Chin. J. Semicond. > 2007, Volume 28?>?Issue 6?> 923-930

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Planar Split Dual Gate MOSFET:Fabrication,Design,and Layout

Xiao Deyuan, Chen Guoqing, Li Ruojia, Lu Pusheng, Chen Liangcheng, Liu Yong and Shen Qichang

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Abstract: The characteristics,experiment,and three dimensional device simulations of a new planar split dual gate (PSDG) MOSFET device are reported for the first time.Theoretical calculation and 3D simulation as well as the experimental data show that the two independent split dual gates can provide dynamical control of device characteristics such as threshold voltage and sub-threshold swing as well as the device saturated current.The PSDG MOSFET transistor leakage current can be reduced by as much as 78% of a traditional single gate MOSFET.The PSDG is fabricated and fully compatible with our conventional 0.18μm logic process flow.

Key words: novel device, MOSFET, planar split dual gate, tunable sub-threshold swing

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    Received: 18 August 2015 Revised: 13 February 2007 Online: Published: 01 June 2007

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      Xiao Deyuan, Chen Guoqing, Li Ruojia, Lu Pusheng, Chen Liangcheng, Liu Yong, Shen Qichang. Planar Split Dual Gate MOSFET:Fabrication,Design,and Layout[J]. Journal of Semiconductors, 2007, 28(6): 923-930. ****Xiao D Y, Chen G Q, Li R J, Lu P S, Chen L C, Liu Y, Shen Q C. Planar Split Dual Gate MOSFET:Fabrication,Design,and Layout[J]. Chin. J. Semicond., 2007, 28(6): 923.
      Citation:
      Xiao Deyuan, Chen Guoqing, Li Ruojia, Lu Pusheng, Chen Liangcheng, Liu Yong, Shen Qichang. Planar Split Dual Gate MOSFET:Fabrication,Design,and Layout[J]. Journal of Semiconductors, 2007, 28(6): 923-930. ****
      Xiao D Y, Chen G Q, Li R J, Lu P S, Chen L C, Liu Y, Shen Q C. Planar Split Dual Gate MOSFET:Fabrication,Design,and Layout[J]. Chin. J. Semicond., 2007, 28(6): 923.

      Planar Split Dual Gate MOSFET:Fabrication,Design,and Layout

      • Memory Technology Development Center,Semiconductor Manufacturing International (Shanghai) Corp,Shanghai 201203,China

      • Memory Technology Development Center,Semiconductor Manufacturing International (Shanghai) Corp,Shanghai 201203,China

      • Memory Technology Development Center,Semiconductor Manufacturing International (Shanghai) Corp,Shanghai 201203,China

      • Memory Technology Development Center,Semiconductor Manufacturing International (Shanghai) Corp,Shanghai 201203,China

      • Memory Technology Development Center,Semiconductor Manufacturing International (Shanghai) Corp,Shanghai 201203,China

      • Memory Technology Development Center,Semiconductor Manufacturing International (Shanghai) Corp,Shanghai 201203,China

      • Memory Technology Development Center,Semiconductor Manufacturing International (Shanghai) Corp,Shanghai 201203,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-12-13
      • Revised Date: 2007-02-13
      • Published Date: 2007-05-30

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