香蕉久久这里只有精品-91国产自拍免费视频-免费A级毛片无码专区网站-无码八A片人妻少妇久久-特黄三级又长又粗又爽-国产精品人成在线播放-国产男女猛烈无遮挡性视频网站-丰满五十路熟女高清免费视频-欧美日韩午夜激情福利

J. Semicond. > 2008, Volume 29?>?Issue 6?> 1141-1146

PAPERS

First Principle Calculation of the Electronic Structure and Optical Properties of Impurity-Doped β-FeSi2 Semiconductors

Yan Wanjun and Xie Quan

+ Author Affiliations

PDF

Abstract: The electronic structure and optical properties of impurity (Mn,Cr,Co,Ni)-doped β-FeSi2 have been studied using the first principle plane-wave pseudo-potential based on the density function theory.The calculated results show that Mn prefers the FeI site,whereas Cr,Co,and Ni prefer the FeII site.The change about the volume and the atom position of the β-FeSi2 cell depends strongly on the species of dopants and the doped atom’s sites.The Fermi surface moves to the valence band with impurity from Mn or Cr and the β-FeSi2 becomes a p-type semiconductor while the Fermi surface moves to the conduction band with impurity from Co or Ni and the β-FeSi2 becomes a n-type semiconductor.The dopants can provide large numbers of carriers near the Fermi energy and change the properties of the interband transition of electrons.

Key words: doped β-FeSi2geometrical structureelectronic structureoptical propertiesfirst principle

  • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3592 Times PDF downloads: 1474 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 17 January 2008 Online: Published: 01 June 2008

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗(yàn)證碼錯誤
      Yan Wanjun, Xie Quan. First Principle Calculation of the Electronic Structure and Optical Properties of Impurity-Doped β-FeSi2 Semiconductors[J]. Journal of Semiconductors, 2008, 29(6): 1141-1146. ****Yan W J, Xie Q. First Principle Calculation of the Electronic Structure and Optical Properties of Impurity-Doped β-FeSi2 Semiconductors[J]. J. Semicond., 2008, 29(6): 1141.
      Citation:
      Yan Wanjun, Xie Quan. First Principle Calculation of the Electronic Structure and Optical Properties of Impurity-Doped β-FeSi2 Semiconductors[J]. Journal of Semiconductors, 2008, 29(6): 1141-1146. ****
      Yan W J, Xie Q. First Principle Calculation of the Electronic Structure and Optical Properties of Impurity-Doped β-FeSi2 Semiconductors[J]. J. Semicond., 2008, 29(6): 1141.

      First Principle Calculation of the Electronic Structure and Optical Properties of Impurity-Doped β-FeSi2 Semiconductors

      • Received Date: 2015-08-18
      • Accepted Date: 2007-10-10
      • Revised Date: 2008-01-17
      • Published Date: 2008-06-05

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return