PAPERS
Zhang Ruikang, Dong Lei, Yu Yonglin, Wang Dingli, Zhang Jing, Chen Lei and Jiang Shan
Abstract: An InGaAsP waveguide is integrated laterally to MQW using LP-MOCVD butt-joint technology. High quality for the regrowth interface and material is achieved.The loss of the butt-jointed waveguide is 7cm-1.This demonstrates the applicability of butt-joint technology in fabricating high quality future photonic integrated circuits.
Key words: MOCVD, butt-joint growth, waveguide
Article views: 3871 Times PDF downloads: 1536 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 05 December 2007 Online: Published: 01 June 2008
| Citation: |
Zhang Ruikang, Dong Lei, Yu Yonglin, Wang Dingli, Zhang Jing, Chen Lei, Jiang Shan. Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy[J]. Journal of Semiconductors, 2008, 29(6): 1177-1179.
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Zhang R K, Dong L, Yu Y L, Wang D L, Zhang J, Chen L, Jiang S. Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy[J]. J. Semicond., 2008, 29(6): 1177.
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