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J. Semicond. > 2008, Volume 29?>?Issue 6?> 1177-1179

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Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy

Zhang Ruikang, Dong Lei, Yu Yonglin, Wang Dingli, Zhang Jing, Chen Lei and Jiang Shan

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Abstract: An InGaAsP waveguide is integrated laterally to MQW using LP-MOCVD butt-joint technology. High quality for the regrowth interface and material is achieved.The loss of the butt-jointed waveguide is 7cm-1.This demonstrates the applicability of butt-joint technology in fabricating high quality future photonic integrated circuits.

Key words: MOCVD butt-joint growth waveguide

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    Received: 18 August 2015 Revised: 05 December 2007 Online: Published: 01 June 2008

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      Zhang Ruikang, Dong Lei, Yu Yonglin, Wang Dingli, Zhang Jing, Chen Lei, Jiang Shan. Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy[J]. Journal of Semiconductors, 2008, 29(6): 1177-1179. ****Zhang R K, Dong L, Yu Y L, Wang D L, Zhang J, Chen L, Jiang S. Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy[J]. J. Semicond., 2008, 29(6): 1177.
      Citation:
      Zhang Ruikang, Dong Lei, Yu Yonglin, Wang Dingli, Zhang Jing, Chen Lei, Jiang Shan. Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy[J]. Journal of Semiconductors, 2008, 29(6): 1177-1179. ****
      Zhang R K, Dong L, Yu Y L, Wang D L, Zhang J, Chen L, Jiang S. Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy[J]. J. Semicond., 2008, 29(6): 1177.

      Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy

      • Received Date: 2015-08-18
      • Accepted Date: 2007-10-16
      • Revised Date: 2007-12-05
      • Published Date: 2008-06-05

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