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J. Semicond. > 2008, Volume 29?>?Issue 4?> 677-681

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An Ultra-Low Specific On-Resistance VDMOS with a Step Oxide-Bypassed Trench Structure

Duan Baoxing, Yang Yintang, Zhang Bo and Li Zhaoji

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Abstract: A novel Step Oxide-Bypassed (SOB) trench VDMOS structure is designed based on the Oxide-Bypassed concept proposed by Liang Y C.This structure is suitable for breakdown voltage below 300V to obtain ultra-low specific on-resistance.The main feature of this structure is the various thicknesses of sidewall oxide,which modulate electric field distribution in the drift region and the charge compensation effect.As a result,the breakdown voltage is increased no less than 20% due to the more uniform electric field of the drift region,while the specific on-resistance was reduced by 40%~60% for the step oxide bypassed compared with the oxide-bypassed structure.

Key words: step oxide-bypassed, VDMOS, breakdown voltage, specific on-resistance

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    Received: 18 August 2015 Revised: 06 November 2007 Online: Published: 01 April 2008

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      Duan Baoxing, Yang Yintang, Zhang Bo, Li Zhaoji. An Ultra-Low Specific On-Resistance VDMOS with a Step Oxide-Bypassed Trench Structure[J]. Journal of Semiconductors, 2008, 29(4): 677-681. ****Duan B X, Yang Y T, Zhang B, Li Z J. An Ultra-Low Specific On-Resistance VDMOS with a Step Oxide-Bypassed Trench Structure[J]. J. Semicond., 2008, 29(4): 677.
      Citation:
      Duan Baoxing, Yang Yintang, Zhang Bo, Li Zhaoji. An Ultra-Low Specific On-Resistance VDMOS with a Step Oxide-Bypassed Trench Structure[J]. Journal of Semiconductors, 2008, 29(4): 677-681. ****
      Duan B X, Yang Y T, Zhang B, Li Z J. An Ultra-Low Specific On-Resistance VDMOS with a Step Oxide-Bypassed Trench Structure[J]. J. Semicond., 2008, 29(4): 677.

      An Ultra-Low Specific On-Resistance VDMOS with a Step Oxide-Bypassed Trench Structure

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-09-18
      • Revised Date: 2007-11-06
      • Published Date: 2008-04-03

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