Chin. J. Semicond. > 2007, Volume 28?>?Issue 10?> 1620-1624

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A Highly Symmetrical Capacitive Accelerometer by Silicon Four-Layer Bonding

Xu Weihe, Che Lufeng, Li Yufang, Xiong Bin and Wang Yuelin

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Abstract: This paper presents a highly symmetrical capacitive accelerometer fabricated by four silicon wafers bonded together.The cantilever-mass structure is fabricated by bonding two wafers together by silicon fusion,and the two static electrodes are bonded later by low-temperature glass melting.Through the silicon bonding,we achieve a wafer-level vacuum package,and the wire-bonding PAD is made after the fabrication is complete.The dimensions of the chip are 6.8mm×5.6mm×1.68mm,and those of the mass are 3.2mm×3.2mm×0.84mm.The test results of the sensor show that the sensitivity is about 6pF/g,the Q value is 35,the resonant frequency is 489Hz,and the leakage is less than 0.1e-9cm3/s.

Key words: capacitive accelerometer, silicon bonding, wafer-level vacuum package

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    Received: 18 August 2015 Revised: 10 May 2007 Online: Published: 01 October 2007

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      Xu Weihe, Che Lufeng, Li Yufang, Xiong Bin, Wang Yuelin. A Highly Symmetrical Capacitive Accelerometer by Silicon Four-Layer Bonding[J]. Journal of Semiconductors, 2007, 28(10): 1620-1624. ****Xu W H, Che L F, Li Y F, Xiong B, Wang Y L. A Highly Symmetrical Capacitive Accelerometer by Silicon Four-Layer Bonding[J]. Chin. J. Semicond., 2007, 28(10): 1620.
      Citation:
      Xu Weihe, Che Lufeng, Li Yufang, Xiong Bin, Wang Yuelin. A Highly Symmetrical Capacitive Accelerometer by Silicon Four-Layer Bonding[J]. Journal of Semiconductors, 2007, 28(10): 1620-1624. ****
      Xu W H, Che L F, Li Y F, Xiong B, Wang Y L. A Highly Symmetrical Capacitive Accelerometer by Silicon Four-Layer Bonding[J]. Chin. J. Semicond., 2007, 28(10): 1620.

      A Highly Symmetrical Capacitive Accelerometer by Silicon Four-Layer Bonding

      • State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Graduate University of the Chinese Academy of Sciences,Beijing 100049,China

      • State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • State Key Laboratory of Transducer Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-04-10
      • Revised Date: 2007-05-10
      • Published Date: 2007-09-26

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