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J. Semicond. > 2023, Volume 44?>?Issue 8?> 082801

ARTICLES

High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility

Liyang Zhu1, Kuangli Chen1, Ying Ma2, Yong Cai2, Chunhua Zhou1, , Zhaoji Li1, Bo Zhang1 and Qi Zhou1, 3,

+ Author Affiliations

 Corresponding author: Chunhua Zhou, czhou@uestc.edu.cn; Qi Zhou, zhouqi@uestc.edu.cn

DOI: 10.1088/1674-4926/44/8/082801

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Abstract: In this work, the GaN p-MISFET with LPCVD-SiNx is studied as a gate dielectric to improve device performance. By changing the Si/N stoichiometry of SiNx, it is found that the channel hole mobility can be effectively enhanced with Si-rich SiNx gate dielectric, which leads to a respectably improved drive current of GaN p-FET. The record high channel mobility of 19.4 cm2/(V?s) was achieved in the device featuring an Enhancement-mode channel. Benefiting from the significantly improved channel mobility, the fabricated E-mode GaN p-MISFET is capable of delivering a decent-high current of 1.6 mA/mm, while simultaneously featuring a negative threshold-voltage (VTH) of –2.3 V (defining at a stringent criteria of 10 μA/mm). The device also exhibits a well pinch-off at 0 V with low leakage current of 1 nA/mm. This suggests that a decent E-mode operation of the fabricated p-FET is obtained. In addition, the VTH shows excellent stability, while the threshold-voltage hysteresis ΔVTH is as small as 0.1 V for a gate voltage swing up to –10 V, which is among the best results reported in the literature. The results indicate that optimizing the Si/N stoichiometry of LPCVD-SiNx is a promising approach to improve the device performance of GaN p-MISFET.

Key words: p-channel, GaN p-FET, LPCVD, channel mobility, hole mobility, enhancement-mode



[1]
Teo K H, Zhang Y H, Chowdhury N, et al. Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects. J Appl Phys, 2021, 130, 160902 doi: 10.1063/5.0061555
[2]
Amano H, Baines Y, Beam E, et al. The 2018 GaN power electronics roadmap. J Phys D: Appl Phys, 2018, 51, 163001 doi: 10.1088/1361-6463/aaaf9d
[3]
Trescases O, Murray S K, Jiang W L, et al. GaN power ICs: Reviewing strengths, gaps, and future directions. 2020 IEEE International Electron Devices Meeting (IEDM), 2021, 27.4.1 doi: 10.1109/IEDM13553.2020.9371918
[4]
Dan K. Monolithic GaN power IC technology drives wide bandgap adoption. 2020 IEEE International Electron Devices Meeting (IEDM), 2021, 27.5.1 doi: 10.1109/IEDM13553.2020.9372021
[5]
Hahn H, Reuters B, Kotzea S, et al. First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors. 72nd Device Research Conference, 2014, 259 doi: 10.1109/DRC.2014.6872396
[6]
Nakajima A, Nishizawa S I, Ohashi H, et al. One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors. 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, 241 doi: 10.1109/ISPSD.2014.6856021
[7]
Zheng Z Y, Zhang L, Song W J, et al. Gallium nitride-based complementary logic integrated circuits. Nat Electron, 2021, 4, 595 doi: 10.1038/s41928-021-00611-y
[8]
Niu X R, Hou B, Yang L, et al. Analytical model on the threshold voltage of p-channel heterostructure field-effect transistors on a GaN-based complementary circuit platform. IEEE Trans Electron Devices, 2022, 69, 57 doi: 10.1109/TED.2021.3129712
[9]
Raj A, Krishna A, Hatui N, et al. Demonstration of a GaN/AlGaN superlattice-based p-channel FinFET with high ON-current. IEEE Electron Device Lett, 2020, 41, 220 doi: 10.1109/LED.2019.2963428
[10]
Bader S J, Chaudhuri R, Nomoto K, et al. Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas. IEEE Electron Device Lett, 2018, 39, 1848 doi: 10.1109/LED.2018.2874190
[11]
Raj A, Krishna A, Hatui N, et al. GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and >50 mA/mm on-current. 2021 IEEE International Electron Devices Meeting (IEDM), 2022, 5.4.1 doi: 10.1109/IEDM19574.2021.9720496
[12]
Chowdhury N, Xie Q Y, Palacios T. Tungsten-gated GaN/AlGaN p-FET with Imax > 120 mA/mm on GaN-on-Si. IEEE Electron Device Lett, 2022, 43, 545 doi: 10.1109/LED.2022.3149659
[13]
Chowdhury N, Xie Q Y, Palacios T. Self-aligned E-mode GaN p-channel FinFET with ION > 100 mA/mm and ION/IOFF > 107. IEEE Electron Device Lett, 2022, 43, 358 doi: 10.1109/LED.2022.3140281
[14]
Du H H, Liu Z H, Hao L, et al. High-performance E-mode p-channel GaN FinFET on silicon substrate with high ION/IOFF and high threshold voltage. IEEE Electron Device Lett, 2022, 43, 705 doi: 10.1109/LED.2022.3155152
[15]
Zheng Z Y, Song W J, Zhang L, et al. High ION and ION/IOFF ratio enhancement?mode buried ratio enhancement?mode buried p-channel GaN MOSFETs on p-GaN gate power HEMT platform. IEEE Electron Device Lett, 2020, 41, 26 doi: 10.1109/LED.2019.2954035
[16]
Yin Y D, Lee K B. High-performance enhancement-mode p-channel GaN MISFETs with steep subthreshold swing. IEEE Electron Device Lett, 2022, 43, 533 doi: 10.1109/LED.2022.3152308
[17]
Chowdhury N, Lemettinen J, Xie Q Y, et al. P-channel GaN transistor based on p-GaN/AlGaN/GaN on Si. IEEE Electron Device Lett, 2019, 40, 1036 doi: 10.1109/LED.2019.2916253
[18]
Chowdhury N, Xie Q Y, Yuan M Y, et al. Regrowth-free GaN-based complementary logic on a Si substrate. IEEE Electron Device Lett, 2020, 41, 820 doi: 10.1109/LED.2020.2987003
[19]
Schroder D K. Semiconductor material and device characterization. Wiley-IEEE Press, 2005
[20]
Makino T. Composition and structure control by source gas ratio in LPCVD SiNx. J Electrochem Soc, 1983, 130, 450 doi: 10.1149/1.2119729
[21]
Zhu L Y, Zhou Q, Chen K L, et al. The modulation effect of LPCVD-SixNy stoichiometry on 2-DEG characteristic of UTB AlGaN/GaN heterostructure. IEEE Trans Electron Devices, 2022, 69, 4828 doi: 10.1109/TED.2022.3188609
[22]
Jin H, Jiang Q M, Huang S, et al. An enhancement-mode GaN p-FET with improved breakdown voltage. IEEE Electron Device Lett, 2022, 43, 1191 doi: 10.1109/LED.2022.3184998
[23]
Zheng Z Y, Zhang L, Song W J, et al. Threshold voltage instability of enhancement-mode GaN buried p-channel MOSFETs. IEEE Electron Device Lett, 2021, 42, 1584 doi: 10.1109/LED.2021.3114776
[24]
Zhang L, Zheng Z Y, Cheng Y, et al. SiN/in-situ-GaON staggered gate stack on p-GaN for enhanced stability in buried-channel GaN p-FETs. 2021 IEEE International Electron Devices Meeting (IEDM), 2022, 5.3.1 doi: 10.1109/IEDM19574.2021.9720653
[25]
Poncé S, Jena D, Giustino F. Hole mobility of strained GaN from first principles. Phys Rev B, 2019, 100, 085204 doi: 10.1103/PhysRevB.100.085204
[26]
Siddique A, Ahmed R, Anderson J, et al. Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs. J Cryst Growth, 2019, 517, 28 doi: 10.1016/j.jcrysgro.2019.03.020
Fig. 1.  (Color online) (a) Epitaxial structure and schematic of the proposed device. (b) The fabrication procedure. The I–V characteristic measured from TLM for the samples with (c) N-rich LPCVD SiNx and (d) Si-rich LPCVD SiNx.

Fig. 2.  (Color online) The focused ion beam section of ~22 nm channel.

Fig. 3.  (Color online) The transfer characteristic of (a) Si-rich sample and (b) N-rich sample. The output characteristic of (c) Si-rich sample and (d) N-rich.

Fig. 4.  (Color online) The μeff and the nh of (a) Si-rich and (b) N-rich sample with ~48 nm trench.

Fig. 5.  (Color online) (a) The focused ion beam section of ~12 nm channel. (b) The surface morphology characterized before/after recess.

Fig. 6.  (Color online) The transfer characteristic of (a) Si-rich sample and (b) N-rich sample. The output characteristic of (c) Si-rich sample and (d) N-rich.

Fig. 7.  (Color online) The ΔVTH with different VGS sweep ranges.

Fig. 8.  (Color online) The Band diagram schematics of the MIS gate of Si-rich sample during the (a) initial state, (b) up sweep and (c) down back.

Fig. 9.  (Color online) the Band diagram schematics of the MIS gate of N-rich sample during the (a) initial state, (b) up sweep and (c) down back.

Fig. 10.  (Color online) The μeff and the nh of (a) Si-rich and (b) N-rich sample with ~58 nm trench.

Table 1.   Benchmark of typical parameters of GaN p-FETs.

GroupMobility (cm2/(V?s))ION/IOFF fVTH (V)ΔVTH (V@VGS_min)RON (kΩ?mm)
This work19.4a5×105?2.3c?0.1 (@-10 V)5.7
Xidian[14]2b~102?2.2dN. A.0.54
Sheffield[16]11.8a~107?0.73c?0.12 (@?8 V)1
HKUST[24]N. A.e~2×107?1.7c~?0.1 (@?6 V)0.65
SINANO[22]11b~106?2.7c?2.4 (@?12 V)0.061
MIT[12]15b~103.5dN. A.2.3
MIT[13]11b~10?0.3dN. A.2.3
MIT[18]10a~102?1N. A.2.4
MIT[17]7.5a~1062N. A.
HKUST[15]10.2b~2×107?1.7cN. A.
a mobility in channel; b mobility in access region;
c defined at ID = 0.01 mA/mm; d defined by linear-extrapolation;
e N. A. is abbreviation for “not available”; f IOFF in here was the current when VGS is biased to 0 V.
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[1]
Teo K H, Zhang Y H, Chowdhury N, et al. Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects. J Appl Phys, 2021, 130, 160902 doi: 10.1063/5.0061555
[2]
Amano H, Baines Y, Beam E, et al. The 2018 GaN power electronics roadmap. J Phys D: Appl Phys, 2018, 51, 163001 doi: 10.1088/1361-6463/aaaf9d
[3]
Trescases O, Murray S K, Jiang W L, et al. GaN power ICs: Reviewing strengths, gaps, and future directions. 2020 IEEE International Electron Devices Meeting (IEDM), 2021, 27.4.1 doi: 10.1109/IEDM13553.2020.9371918
[4]
Dan K. Monolithic GaN power IC technology drives wide bandgap adoption. 2020 IEEE International Electron Devices Meeting (IEDM), 2021, 27.5.1 doi: 10.1109/IEDM13553.2020.9372021
[5]
Hahn H, Reuters B, Kotzea S, et al. First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors. 72nd Device Research Conference, 2014, 259 doi: 10.1109/DRC.2014.6872396
[6]
Nakajima A, Nishizawa S I, Ohashi H, et al. One-chip operation of GaN-based P-channel and N-channel heterojunction field effect transistors. 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2014, 241 doi: 10.1109/ISPSD.2014.6856021
[7]
Zheng Z Y, Zhang L, Song W J, et al. Gallium nitride-based complementary logic integrated circuits. Nat Electron, 2021, 4, 595 doi: 10.1038/s41928-021-00611-y
[8]
Niu X R, Hou B, Yang L, et al. Analytical model on the threshold voltage of p-channel heterostructure field-effect transistors on a GaN-based complementary circuit platform. IEEE Trans Electron Devices, 2022, 69, 57 doi: 10.1109/TED.2021.3129712
[9]
Raj A, Krishna A, Hatui N, et al. Demonstration of a GaN/AlGaN superlattice-based p-channel FinFET with high ON-current. IEEE Electron Device Lett, 2020, 41, 220 doi: 10.1109/LED.2019.2963428
[10]
Bader S J, Chaudhuri R, Nomoto K, et al. Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas. IEEE Electron Device Lett, 2018, 39, 1848 doi: 10.1109/LED.2018.2874190
[11]
Raj A, Krishna A, Hatui N, et al. GaN/AlGaN superlattice based E-mode p-channel MES-FinFET with regrown contacts and >50 mA/mm on-current. 2021 IEEE International Electron Devices Meeting (IEDM), 2022, 5.4.1 doi: 10.1109/IEDM19574.2021.9720496
[12]
Chowdhury N, Xie Q Y, Palacios T. Tungsten-gated GaN/AlGaN p-FET with Imax > 120 mA/mm on GaN-on-Si. IEEE Electron Device Lett, 2022, 43, 545 doi: 10.1109/LED.2022.3149659
[13]
Chowdhury N, Xie Q Y, Palacios T. Self-aligned E-mode GaN p-channel FinFET with ION > 100 mA/mm and ION/IOFF > 107. IEEE Electron Device Lett, 2022, 43, 358 doi: 10.1109/LED.2022.3140281
[14]
Du H H, Liu Z H, Hao L, et al. High-performance E-mode p-channel GaN FinFET on silicon substrate with high ION/IOFF and high threshold voltage. IEEE Electron Device Lett, 2022, 43, 705 doi: 10.1109/LED.2022.3155152
[15]
Zheng Z Y, Song W J, Zhang L, et al. High ION and ION/IOFF ratio enhancement?mode buried ratio enhancement?mode buried p-channel GaN MOSFETs on p-GaN gate power HEMT platform. IEEE Electron Device Lett, 2020, 41, 26 doi: 10.1109/LED.2019.2954035
[16]
Yin Y D, Lee K B. High-performance enhancement-mode p-channel GaN MISFETs with steep subthreshold swing. IEEE Electron Device Lett, 2022, 43, 533 doi: 10.1109/LED.2022.3152308
[17]
Chowdhury N, Lemettinen J, Xie Q Y, et al. P-channel GaN transistor based on p-GaN/AlGaN/GaN on Si. IEEE Electron Device Lett, 2019, 40, 1036 doi: 10.1109/LED.2019.2916253
[18]
Chowdhury N, Xie Q Y, Yuan M Y, et al. Regrowth-free GaN-based complementary logic on a Si substrate. IEEE Electron Device Lett, 2020, 41, 820 doi: 10.1109/LED.2020.2987003
[19]
Schroder D K. Semiconductor material and device characterization. Wiley-IEEE Press, 2005
[20]
Makino T. Composition and structure control by source gas ratio in LPCVD SiNx. J Electrochem Soc, 1983, 130, 450 doi: 10.1149/1.2119729
[21]
Zhu L Y, Zhou Q, Chen K L, et al. The modulation effect of LPCVD-SixNy stoichiometry on 2-DEG characteristic of UTB AlGaN/GaN heterostructure. IEEE Trans Electron Devices, 2022, 69, 4828 doi: 10.1109/TED.2022.3188609
[22]
Jin H, Jiang Q M, Huang S, et al. An enhancement-mode GaN p-FET with improved breakdown voltage. IEEE Electron Device Lett, 2022, 43, 1191 doi: 10.1109/LED.2022.3184998
[23]
Zheng Z Y, Zhang L, Song W J, et al. Threshold voltage instability of enhancement-mode GaN buried p-channel MOSFETs. IEEE Electron Device Lett, 2021, 42, 1584 doi: 10.1109/LED.2021.3114776
[24]
Zhang L, Zheng Z Y, Cheng Y, et al. SiN/in-situ-GaON staggered gate stack on p-GaN for enhanced stability in buried-channel GaN p-FETs. 2021 IEEE International Electron Devices Meeting (IEDM), 2022, 5.3.1 doi: 10.1109/IEDM19574.2021.9720653
[25]
Poncé S, Jena D, Giustino F. Hole mobility of strained GaN from first principles. Phys Rev B, 2019, 100, 085204 doi: 10.1103/PhysRevB.100.085204
[26]
Siddique A, Ahmed R, Anderson J, et al. Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs. J Cryst Growth, 2019, 517, 28 doi: 10.1016/j.jcrysgro.2019.03.020

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    Received: 14 January 2023 Revised: 12 February 2023 Online: Accepted Manuscript: 30 March 2023Uncorrected proof: 06 April 2023Corrected proof: 13 July 2023Published: 10 August 2023

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      Liyang Zhu, Kuangli Chen, Ying Ma, Yong Cai, Chunhua Zhou, Zhaoji Li, Bo Zhang, Qi Zhou. High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility[J]. Journal of Semiconductors, 2023, 44(8): 082801. doi: 10.1088/1674-4926/44/8/082801 ****L Y Zhu, K L Chen, Y Ma, Y Cai, C H Zhou, Z J Li, B Zhang, Q Zhou. High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility[J]. J. Semicond, 2023, 44(8): 082801. doi: 10.1088/1674-4926/44/8/082801
      Citation:
      Liyang Zhu, Kuangli Chen, Ying Ma, Yong Cai, Chunhua Zhou, Zhaoji Li, Bo Zhang, Qi Zhou. High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility[J]. Journal of Semiconductors, 2023, 44(8): 082801. doi: 10.1088/1674-4926/44/8/082801 ****
      L Y Zhu, K L Chen, Y Ma, Y Cai, C H Zhou, Z J Li, B Zhang, Q Zhou. High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility[J]. J. Semicond, 2023, 44(8): 082801. doi: 10.1088/1674-4926/44/8/082801

      High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility

      DOI: 10.1088/1674-4926/44/8/082801
      • 1.

        State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      • 2.

        Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, China

      • 3.

        Institute of Electronic and Information Engineering, University of Electronic Science and Technology of China, Dongguan 523808, China

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      • Liyang Zhu：received his B.S. degree from the University of Electronic Science and Technology of China, Chengdu, China, in 2016. He is currently a doctoral candidate with the University of Electronic Science and Technology of China, Chengdu, China
      • Qi Zhou：received his Ph.D. degree in electronic and computer engineering from the Hong Kong University of Science and Technology, Hong Kong, in 2012. He is currently a professor with the University of Electronic Science and Technology of China, Chengdu, China
      • Corresponding author: czhou@uestc.edu.cn; zhouqi@uestc.edu.cn
      • Received Date: 2023-01-14
      • Revised Date: 2023-02-12
        • Available Online: 2023-03-30

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