香蕉久久这里只有精品-91国产自拍免费视频-免费A级毛片无码专区网站-无码八A片人妻少妇久久-特黄三级又长又粗又爽-国产精品人成在线播放-国产男女猛烈无遮挡性视频网站-丰满五十路熟女高清免费视频-欧美日韩午夜激情福利

J. Semicond. > 2022, Volume 43?>?Issue 6?> 060202

RESEARCH HIGHLIGHTS

A new 3-dB bandwidth record of Ge photodiode on Si

Zhi Liu1, 2, Chuanbo Li3 and Buwen Cheng1, 2,

+ Author Affiliations

 Corresponding author: Buwen Cheng, cbw@semi.ac.cn

DOI: 10.1088/1674-4926/43/6/060202

PDF

Turn off MathJax



[1]
Won R. Integrating silicon photonics. Nat Photonics, 2010, 4, 498 doi: 10.1038/nphoton.2010.189
[2]
Chen H, Verheyen P, de Heyn P, et al. –1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond. Opt Express, 2016, 24, 4622 doi: 10.1364/OE.24.004622
[3]
Lischke S, Knoll D, Mai C, et al. High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode. Opt Express, 2015, 23, 27213 doi: 10.1364/OE.23.027213
[4]
Boeuf F, Fincato A, Maggi L, et al. A silicon photonics technology for 400 gbit/s applications. 2019 IEEE Int Electron Devices Meet, 2019, 33.1.1
[5]
Virot L, Benedikovic D, Szelag B, et al. Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction. Opt Express, 2017, 25, 19487 doi: 10.1364/OE.25.019487
[6]
Jutzi M, Berroth M, Wohl G, et al. Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth. IEEE Photonics Technol Lett, 2005, 17, 1510 doi: 10.1109/LPT.2005.848546
[7]
Reggiani L, Canali C, Nava F, et al. Hole drift velocity in germanium. Phys Rev B, 1977, 16, 2781 doi: 10.1103/PhysRevB.16.2781
[8]
Rouvalis E, Chtioui M, van Dijk F, et al. 170 GHz uni-traveling carrier photodiodes for InP-based photonic integrated circuits. Opt Express, 2012, 20, 20090 doi: 10.1364/OE.20.020090
[9]
Lischke S, Peczek A, Morgan J S, et al. Ultra-fast germanium photodiode with 3-dB bandwidth of 265?GHz. Nat Photonics, 2021, 15, 925 doi: 10.1038/s41566-021-00893-w
[10]
Windhorn T H, Cook L W, Stillman G E. The electron velocity-field characteristic for n-In0.53Ga0.47As at 300 K. IEEE Electron Device Lett, 1982, 3, 18 doi: 10.1109/EDL.1982.25459
[11]
Li X L, Liu Z, Peng L Z, et al. High-performance germanium waveguide photodetectors on silicon. Chin Phys Lett, 2020, 37, 038503 doi: 10.1088/0256-307X/37/3/038503
Fig. 1.  (Color online) Calculated 3-dB bandwidth of Ge p–i–n photodiode with various thickness and active area. Calculated transit-time-limited bandwidth is also shown for comparison.

[1]
Won R. Integrating silicon photonics. Nat Photonics, 2010, 4, 498 doi: 10.1038/nphoton.2010.189
[2]
Chen H, Verheyen P, de Heyn P, et al. –1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond. Opt Express, 2016, 24, 4622 doi: 10.1364/OE.24.004622
[3]
Lischke S, Knoll D, Mai C, et al. High bandwidth, high responsivity waveguide-coupled germanium p-i-n photodiode. Opt Express, 2015, 23, 27213 doi: 10.1364/OE.23.027213
[4]
Boeuf F, Fincato A, Maggi L, et al. A silicon photonics technology for 400 gbit/s applications. 2019 IEEE Int Electron Devices Meet, 2019, 33.1.1
[5]
Virot L, Benedikovic D, Szelag B, et al. Integrated waveguide PIN photodiodes exploiting lateral Si/Ge/Si heterojunction. Opt Express, 2017, 25, 19487 doi: 10.1364/OE.25.019487
[6]
Jutzi M, Berroth M, Wohl G, et al. Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth. IEEE Photonics Technol Lett, 2005, 17, 1510 doi: 10.1109/LPT.2005.848546
[7]
Reggiani L, Canali C, Nava F, et al. Hole drift velocity in germanium. Phys Rev B, 1977, 16, 2781 doi: 10.1103/PhysRevB.16.2781
[8]
Rouvalis E, Chtioui M, van Dijk F, et al. 170 GHz uni-traveling carrier photodiodes for InP-based photonic integrated circuits. Opt Express, 2012, 20, 20090 doi: 10.1364/OE.20.020090
[9]
Lischke S, Peczek A, Morgan J S, et al. Ultra-fast germanium photodiode with 3-dB bandwidth of 265?GHz. Nat Photonics, 2021, 15, 925 doi: 10.1038/s41566-021-00893-w
[10]
Windhorn T H, Cook L W, Stillman G E. The electron velocity-field characteristic for n-In0.53Ga0.47As at 300 K. IEEE Electron Device Lett, 1982, 3, 18 doi: 10.1109/EDL.1982.25459
[11]
Li X L, Liu Z, Peng L Z, et al. High-performance germanium waveguide photodetectors on silicon. Chin Phys Lett, 2020, 37, 038503 doi: 10.1088/0256-307X/37/3/038503

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 1658 Times PDF downloads: 83 Times Cited by: 0 Times

    History

    Received: 28 December 2021 Revised: 11 April 2022 Online: Accepted Manuscript: 15 April 2022Uncorrected proof: 18 April 2022Published: 06 June 2022

    Catalog

      Email This Article

      User name:
      Email:*請(qǐng)輸入正確郵箱
      Code:*驗(yàn)證碼錯(cuò)誤
      Zhi Liu, Chuanbo Li, Buwen Cheng. A new 3-dB bandwidth record of Ge photodiode on Si[J]. Journal of Semiconductors, 2022, 43(6): 060202. doi: 10.1088/1674-4926/43/6/060202 ****Z Liu, C B Li, B W Cheng. A new 3-dB bandwidth record of Ge photodiode on Si[J]. J. Semicond, 2022, 43(6): 060202. doi: 10.1088/1674-4926/43/6/060202
      Citation:
      Zhi Liu, Chuanbo Li, Buwen Cheng. A new 3-dB bandwidth record of Ge photodiode on Si[J]. Journal of Semiconductors, 2022, 43(6): 060202. doi: 10.1088/1674-4926/43/6/060202 ****
      Z Liu, C B Li, B W Cheng. A new 3-dB bandwidth record of Ge photodiode on Si[J]. J. Semicond, 2022, 43(6): 060202. doi: 10.1088/1674-4926/43/6/060202

      A new 3-dB bandwidth record of Ge photodiode on Si

      DOI: 10.1088/1674-4926/43/6/060202
      • 1.

        State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • 2.

        College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

      • 3.

        School of Science, Optoelectronic Research Center, Minzu University of China, Beijing 100081, China

      More Information
      • Zhi Liu：received the Ph.D. degree from Institute of Semiconductor, Chinese Academy of Sciences, in 2014. Since 2014, he has been with the Institute of Semiconductor, Chinese Academy of Sciences. His research interests include silicon-based group IV material growth and silicon photonics
      • Chuanbo Li：received his Ph.D. degree in Microelectronics & Solid State Electronics from Institute of Semiconductor, Chinese Academy of Science, in 2005. He is currently a professor at Minzu University of China. He is mainly focusing on Si-based nanomaterial and nanodevices for photoelectronics and clean energy application
      • Buwen Cheng：received the Bachelor’s degree in physics and the Master’s degree from Beijing Normal University, in 1989 and 1992, respectively, and the Ph.D. degree from the Institute of Semiconductor, Chinese Academic of Sciences, Beijing. His research covers the Si-based hetero-structure material epitaxy and optoelectronic devices
      • Corresponding author: cbw@semi.ac.cn
      • Received Date: 2021-12-28
      • Revised Date: 2022-04-11
        • Available Online: 2022-04-15

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return