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J. Semicond. > 2021, Volume 42?>?Issue 3?> 030203

RESEARCH HIGHLIGHTS

Self-assembled monolayers enhance the performance of oxide thin-film transistors

Wensi Cai1, Zhigang Zang1, and Liming Ding2,

+ Author Affiliations

 Corresponding author: Zhigang Zang, zangzg@cqu.edu.cn; Liming Ding, ding@nanoctr.cn

DOI: 10.1088/1674-4926/42/3/030203

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[1]
Park J W, Kang B H, Kim H J. A review of low-temperature solution-processed metal oxide thin-film transistors for flexible electronics. Adv Funct Mater, 2020, 30, 1904632 doi: 10.1002/adfm.201904632
[2]
Vijjapu M T, Surya S G, Yuvaraja S, et al. Fully integrated indium gallium zinc oxide NO2 gas detector. ACS Sens, 2020, 5, 984 doi: 10.1021/acssensors.9b02318
[3]
Fortunato E, Barquinha P, Martins R. Oxide semiconductor thin-film transistors: A review of recent advances. Adv Mater, 2012, 24, 2945 doi: 10.1002/adma.201103228
[4]
Nomura K, Ohta H, Takagi A, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature, 2004, 432, 488 doi: 10.1038/nature03090
[5]
Ho D, Jeong H, Choi S, et al. Organic materials as a passivation layer for metal oxide semiconductors. J Mater Chem C, 2020, 8, 14983 doi: 10.1039/D0TC02379E
[6]
Ide K, Nomura K, Hosono H, et al. Electronic defects in amorphous oxide semiconductors: A review. Phys Status Solidi A, 2019, 216, 1800372 doi: 10.1002/pssa.201800372
[7]
Park J S, Jeong J K, Chung H J, et al. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water. Appl Phys Lett, 2008, 92, 072104 doi: 10.1063/1.2838380
[8]
Cai W, Wilson J, Zhang J, et al. Significant performance enhancement of very thin InGaZnO thin-film transistors by a self-assembled monolayer treatment. ACS Appl Electron Mater, 2020, 2, 301 doi: 10.1021/acsaelm.9b00791
[9]
Zhong W, Li G, Lan L, et al. InSnZnO thin-film transistors with vapor- phase self-assembled monolayer as passivation layer. IEEE Electron Device Lett, 2018, 39, 1680 doi: 10.1109/LED.2018.2872352
[10]
Zhong W, Yao R, Liu Y, et al. Effect of self-assembled monolayers (SAMs) as surface passivation on the flexible a-InSnZnO thin-film transistors. IEEE Trans Electron Devices, 2020, 67, 3157 doi: 10.1109/TED.2020.3004420
[11]
Lee S E, Na H J, Lee E G, et al. The effect of surface energy characterized functional groups of self-assembled monolayers for enhancing the electrical stability of oxide semiconductor thin film transistors. Nanotechnology, 2020, 31, 475203 doi: 10.1088/1361-6528/abad5e
[12]
Xiao P, Lan L, Dong T, et al. InGaZnO thin-film transistors modified by self-assembled monolayer with different alkyl chain length. IEEE Electron Device Lett, 2015, 36, 687 doi: 10.1109/LED.2015.2431741
[13]
Bashir A, W?bkenberg P H, Smith J, et al. High-performance zinc oxide transistors and circuits fabricated by spray pyrolysis in ambient atmosphere. Adv Mater, 2009, 21, 2226 doi: 10.1002/adma.200803584
[14]
Cai W, Zhang J, Wilson J, et al. Significant performance improvement of oxide thin-film transistors by a self-assembled monolayer treatment. Adv Electron Mater, 2020, 6, 1901421 doi: 10.1002/aelm.201901421
Fig. 1.  (Color online) (a) Transfer characteristics of IGZO TFTs treated with different SAMs under positive bias stress. Insets show the chemical structures of SAM molecules. Reproduced with permission[11], Copyright 2021, IOP Publishing. (b) Transfer characteristics of IGZO TFTs with and without OTS treatment. (c) OTS-treated IGZO TFTs before and after being stored in air for a year. Reproduced with permission[8], Copyright 2021, American Chemical Society.

Fig. 2.  (Color online) (a) Chemical structure of ODPA and contact angles of AlOx, SAM-treated AlOx before and after annealing. (b) Transfer characteristics of ZnO TFTs. Reproduced with permission[13], Copyright 2021, Wiley-VCH. (c) Transfer characteristics of IGZO TFTs with bare AlxOy and OTS-treated AlxOy as gate dielectrics. (d) Transfer characteristics of IGZO TFTs with bare HfOx and OTS-treated HfOx under positive bias stress. Reproduced with permission[14], Copyright 2021, Wiley-VCH.

[1]
Park J W, Kang B H, Kim H J. A review of low-temperature solution-processed metal oxide thin-film transistors for flexible electronics. Adv Funct Mater, 2020, 30, 1904632 doi: 10.1002/adfm.201904632
[2]
Vijjapu M T, Surya S G, Yuvaraja S, et al. Fully integrated indium gallium zinc oxide NO2 gas detector. ACS Sens, 2020, 5, 984 doi: 10.1021/acssensors.9b02318
[3]
Fortunato E, Barquinha P, Martins R. Oxide semiconductor thin-film transistors: A review of recent advances. Adv Mater, 2012, 24, 2945 doi: 10.1002/adma.201103228
[4]
Nomura K, Ohta H, Takagi A, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature, 2004, 432, 488 doi: 10.1038/nature03090
[5]
Ho D, Jeong H, Choi S, et al. Organic materials as a passivation layer for metal oxide semiconductors. J Mater Chem C, 2020, 8, 14983 doi: 10.1039/D0TC02379E
[6]
Ide K, Nomura K, Hosono H, et al. Electronic defects in amorphous oxide semiconductors: A review. Phys Status Solidi A, 2019, 216, 1800372 doi: 10.1002/pssa.201800372
[7]
Park J S, Jeong J K, Chung H J, et al. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water. Appl Phys Lett, 2008, 92, 072104 doi: 10.1063/1.2838380
[8]
Cai W, Wilson J, Zhang J, et al. Significant performance enhancement of very thin InGaZnO thin-film transistors by a self-assembled monolayer treatment. ACS Appl Electron Mater, 2020, 2, 301 doi: 10.1021/acsaelm.9b00791
[9]
Zhong W, Li G, Lan L, et al. InSnZnO thin-film transistors with vapor- phase self-assembled monolayer as passivation layer. IEEE Electron Device Lett, 2018, 39, 1680 doi: 10.1109/LED.2018.2872352
[10]
Zhong W, Yao R, Liu Y, et al. Effect of self-assembled monolayers (SAMs) as surface passivation on the flexible a-InSnZnO thin-film transistors. IEEE Trans Electron Devices, 2020, 67, 3157 doi: 10.1109/TED.2020.3004420
[11]
Lee S E, Na H J, Lee E G, et al. The effect of surface energy characterized functional groups of self-assembled monolayers for enhancing the electrical stability of oxide semiconductor thin film transistors. Nanotechnology, 2020, 31, 475203 doi: 10.1088/1361-6528/abad5e
[12]
Xiao P, Lan L, Dong T, et al. InGaZnO thin-film transistors modified by self-assembled monolayer with different alkyl chain length. IEEE Electron Device Lett, 2015, 36, 687 doi: 10.1109/LED.2015.2431741
[13]
Bashir A, W?bkenberg P H, Smith J, et al. High-performance zinc oxide transistors and circuits fabricated by spray pyrolysis in ambient atmosphere. Adv Mater, 2009, 21, 2226 doi: 10.1002/adma.200803584
[14]
Cai W, Zhang J, Wilson J, et al. Significant performance improvement of oxide thin-film transistors by a self-assembled monolayer treatment. Adv Electron Mater, 2020, 6, 1901421 doi: 10.1002/aelm.201901421

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    Received: 27 January 2021 Revised: Online: Accepted Manuscript: 27 January 2021Uncorrected proof: 28 January 2021Published: 10 March 2021

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      Wensi Cai, Zhigang Zang, Liming Ding. Self-assembled monolayers enhance the performance of oxide thin-film transistors[J]. Journal of Semiconductors, 2021, 42(3): 030203. doi: 10.1088/1674-4926/42/3/030203 ****W S Cai, Z G Zang, L M Ding, Self-assembled monolayers enhance the performance of oxide thin-film transistors[J]. J. Semicond., 2021, 42(3): 030203. doi: 10.1088/1674-4926/42/3/030203.
      Citation:
      Wensi Cai, Zhigang Zang, Liming Ding. Self-assembled monolayers enhance the performance of oxide thin-film transistors[J]. Journal of Semiconductors, 2021, 42(3): 030203. doi: 10.1088/1674-4926/42/3/030203 ****
      W S Cai, Z G Zang, L M Ding, Self-assembled monolayers enhance the performance of oxide thin-film transistors[J]. J. Semicond., 2021, 42(3): 030203. doi: 10.1088/1674-4926/42/3/030203.

      Self-assembled monolayers enhance the performance of oxide thin-film transistors

      DOI: 10.1088/1674-4926/42/3/030203
      • 1.

        Key Laboratory of Optoelectronic Technology & Systems (MoE), Chongqing University, Chongqing 400044, China

      • 2.

        Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, China

      More Information
      • Wensi Cai：received her PhD degree from University of Manchester in 2019. She joined Chongqing University as a postdoc since 2020. Her research focuses on oxide semiconductor- and perovskite-based electronic devices
      • Zhigang Zang：received his PhD degree from Kyushu University in 2011. He joined School of Optoelectronic Engineering, Chongqing University as a professor since 2014. His research focuses on the synthesis of II–VI, III–V semiconductors and their applications in solar cells, photodetectors and light-emitting diodes
      • Liming Ding：got his PhD from University of Science and Technology of China (was a joint student at Changchun Institute of Applied Chemistry, CAS). He started his research on OSCs and PLEDs in Olle Ingan?s Lab in 1998. Later on, he worked at National Center for Polymer Research, Wright-Patterson Air Force Base and Argonne National Lab (USA). He joined Konarka as a Senior Scientist in 2008. In 2010, he joined National Center for Nanoscience and Technology as a full professor. His research focuses on functional materials and devices. He is RSC Fellow, the nominator for Xplorer Prize, and the Associate Editors for Science Bulletin and Journal of Semiconductors
      • Corresponding author: zangzg@cqu.edu.cn; ding@nanoctr.cn
      • Received Date: 2021-01-27
      • Published Date: 2021-03-10

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