EDITORIAL
Yue Hao1, , Huaqiang Wu2, , Yuchao Yang3, , Qi Liu4, , Xiao Gong5, , Genquan Han1, and Ming Li6,
Corresponding author: Yue Hao, yhao@xidian.edu.cn; Huaqiang Wu, wuhq@tsinghua.edu.cn; Yuchao Yang, yuchaoyang@pku.edu.cn; Qi Liu, liuqi@ime.ac.cn; Xiao Gong, elegong@nus.edu.sg; Genquan Han, gqhan@xidian.edu.cn; Ming Li, ml@semi.ac.cn
| [1] |
Cheng R, Chen Z, Yuan S C, et al. Mobility enhancement techniques for Ge and GeSn MOSFETs. J Semicond, 2021, 42(2), 023101 doi: 10.1088/1674-4926/42/2/023101
|
| [2] |
Sun Y, Zhang R, Yu X, et al. The past and future of multi-gate field-effect transistors (MuGFETs): Process challenges and reliability issues. J Semicond, 2021, 42(2), 023102 doi: 10.1088/1674-4926/42/2/023102
|
| [3] |
Tang Z W, Liu C S, Zeng S F, et al. Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering. J Semicond, 2020, 42(2), 024101 doi: 10.1088/1674-4926/42/2/024101
|
| [4] |
Yang T Z, Cui Y, Li Y R, et al. The effect of γ-ray irradiation on the SOT magnetic films and Hall devices. J Semicond, 2020, 42(2), 024102 doi: 10.1088/1674-4926/42/2/024102
|
| [5] |
Wu D Y, Hu X, Li W Z, et al. 62 GHz germanium photode-tector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud. J Semicond, 2021, 42(2), 020502 doi: 10.1088/1674-4926/42/2/020502
|
| [6] |
Yang D Q, Liu X, Li X G, et al. Photoic crystal nanobeam cavity devices for on-chip integrated silicon photonics. J Semicond, 2021, 42(2), 023103 doi: 10.1088/1674-4926/42/2/023103
|
| [7] |
Tan M, Ye K X, Ming D, et al. Towards electron-ic-photonic-converged thermo-optic feedback tuning. J Semicond, 2021, 42(2), 023104 doi: 10.1088/1674-4926/42/2/023104
|
| [8] |
Xiang S Y, Han Y N, Song Z W, et al. A review: Photonics devices, architectures, and algorithms for optical neural computing. J Semicond, 2021, 42(2), 023105 doi: 10.1088/1674-4926/42/2/023105
|
| [9] |
Bao S Y, Wang Y, Lina K, et al. A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers. J Semicond, 2021, 42(2), 023106 doi: 10.1088/1674-4926/42/2/023106
|
| [10] |
Li X D, Greens K, Amirifar N, et al. Integration of GaN analog building blocks on p-GaN wafers for GaN ICs. J Semicond, 2021, 42(2), 024103 doi: 10.1088/1674-4926/42/2/024103
|
| [1] |
Cheng R, Chen Z, Yuan S C, et al. Mobility enhancement techniques for Ge and GeSn MOSFETs. J Semicond, 2021, 42(2), 023101 doi: 10.1088/1674-4926/42/2/023101
|
| [2] |
Sun Y, Zhang R, Yu X, et al. The past and future of multi-gate field-effect transistors (MuGFETs): Process challenges and reliability issues. J Semicond, 2021, 42(2), 023102 doi: 10.1088/1674-4926/42/2/023102
|
| [3] |
Tang Z W, Liu C S, Zeng S F, et al. Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering. J Semicond, 2020, 42(2), 024101 doi: 10.1088/1674-4926/42/2/024101
|
| [4] |
Yang T Z, Cui Y, Li Y R, et al. The effect of γ-ray irradiation on the SOT magnetic films and Hall devices. J Semicond, 2020, 42(2), 024102 doi: 10.1088/1674-4926/42/2/024102
|
| [5] |
Wu D Y, Hu X, Li W Z, et al. 62 GHz germanium photode-tector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud. J Semicond, 2021, 42(2), 020502 doi: 10.1088/1674-4926/42/2/020502
|
| [6] |
Yang D Q, Liu X, Li X G, et al. Photoic crystal nanobeam cavity devices for on-chip integrated silicon photonics. J Semicond, 2021, 42(2), 023103 doi: 10.1088/1674-4926/42/2/023103
|
| [7] |
Tan M, Ye K X, Ming D, et al. Towards electron-ic-photonic-converged thermo-optic feedback tuning. J Semicond, 2021, 42(2), 023104 doi: 10.1088/1674-4926/42/2/023104
|
| [8] |
Xiang S Y, Han Y N, Song Z W, et al. A review: Photonics devices, architectures, and algorithms for optical neural computing. J Semicond, 2021, 42(2), 023105 doi: 10.1088/1674-4926/42/2/023105
|
| [9] |
Bao S Y, Wang Y, Lina K, et al. A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers. J Semicond, 2021, 42(2), 023106 doi: 10.1088/1674-4926/42/2/023106
|
| [10] |
Li X D, Greens K, Amirifar N, et al. Integration of GaN analog building blocks on p-GaN wafers for GaN ICs. J Semicond, 2021, 42(2), 024103 doi: 10.1088/1674-4926/42/2/024103
|
Article views: 4162 Times PDF downloads: 101 Times Cited by: 0 Times
Received: 31 January 2021 Revised: Online: Accepted Manuscript: 02 February 2021Uncorrected proof: 03 February 2021Published: 08 February 2021
| Citation: |
Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, Ming Li. Preface to the Special Issue on Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration[J]. Journal of Semiconductors, 2021, 42(2): 020101. doi: 10.1088/1674-4926/42/2/020101
****
Y Hao, H Q Wu, Y C Yang, Q Liu, X Gong, G Q Han, M Li, Preface to the Special Issue on Beyond Moore: Three-Dimensional (3D) Heterogeneous Integration[J]. J. Semicond., 2021, 42(2): 020101. doi: 10.1088/1674-4926/42/2/020101.
|
| [1] |
Cheng R, Chen Z, Yuan S C, et al. Mobility enhancement techniques for Ge and GeSn MOSFETs. J Semicond, 2021, 42(2), 023101 doi: 10.1088/1674-4926/42/2/023101
|
| [2] |
Sun Y, Zhang R, Yu X, et al. The past and future of multi-gate field-effect transistors (MuGFETs): Process challenges and reliability issues. J Semicond, 2021, 42(2), 023102 doi: 10.1088/1674-4926/42/2/023102
|
| [3] |
Tang Z W, Liu C S, Zeng S F, et al. Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering. J Semicond, 2020, 42(2), 024101 doi: 10.1088/1674-4926/42/2/024101
|
| [4] |
Yang T Z, Cui Y, Li Y R, et al. The effect of γ-ray irradiation on the SOT magnetic films and Hall devices. J Semicond, 2020, 42(2), 024102 doi: 10.1088/1674-4926/42/2/024102
|
| [5] |
Wu D Y, Hu X, Li W Z, et al. 62 GHz germanium photode-tector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud. J Semicond, 2021, 42(2), 020502 doi: 10.1088/1674-4926/42/2/020502
|
| [6] |
Yang D Q, Liu X, Li X G, et al. Photoic crystal nanobeam cavity devices for on-chip integrated silicon photonics. J Semicond, 2021, 42(2), 023103 doi: 10.1088/1674-4926/42/2/023103
|
| [7] |
Tan M, Ye K X, Ming D, et al. Towards electron-ic-photonic-converged thermo-optic feedback tuning. J Semicond, 2021, 42(2), 023104 doi: 10.1088/1674-4926/42/2/023104
|
| [8] |
Xiang S Y, Han Y N, Song Z W, et al. A review: Photonics devices, architectures, and algorithms for optical neural computing. J Semicond, 2021, 42(2), 023105 doi: 10.1088/1674-4926/42/2/023105
|
| [9] |
Bao S Y, Wang Y, Lina K, et al. A review of silicon-based wafer bonding processes, an approach to realize the monolithic integration of Si-CMOS and III–V-on-Si wafers. J Semicond, 2021, 42(2), 023106 doi: 10.1088/1674-4926/42/2/023106
|
| [10] |
Li X D, Greens K, Amirifar N, et al. Integration of GaN analog building blocks on p-GaN wafers for GaN ICs. J Semicond, 2021, 42(2), 024103 doi: 10.1088/1674-4926/42/2/024103
|
Journal of Semiconductors © 2017 All Rights Reserved 京ICP備05085259號(hào)-2