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J. Semicond. > 2020, Volume 41?>?Issue 8?> 080401

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Photodetectors based on 2D material/Si heterostructure

Jingshu Zhou, Juehan Yang and Zhongming Wei

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 Corresponding author: Zhongming Wei, E-mail: zmwei@semi.ac.cn

DOI: 10.1088/1674-4926/41/8/080401

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[1]
Neto A C, Guinea F, Peres N M, et al. The electronic properties of graphene. Rev Mod Phys, 2009, 81(1), 109 doi: 10.1103/RevModPhys.81.109
[2]
Mueller T, Xia F, Avouris P. Graphene photodetectors for high-speed optical communications. Nat Photonics, 2010, 4(5), 297 doi: 10.1038/nphoton.2010.40
[3]
Lara-Avila S, Danilov A, Golubev D, et al. Towards quantum-limited coherent detection of terahertz waves in charge-neutral graphene. Nat Astron, 2019, 3(11), 983 doi: 10.1038/s41550-019-0843-7
[4]
Li X, Zhu M, Du M, et al. High detectivity graphene–silicon heterojunction photodetector. Small, 2016, 12(5), 595 doi: 10.1002/smll.201502336
[5]
Huang M, Wang M, Chen C, et al. Broadband black-phosphorus photodetectors with high responsivity. Adv Mater, 2016, 28(18), 3481 doi: 10.1002/adma.201506352
[6]
Wang F, Wang Z, Yin L, et al. 2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection. Chem Soc Rev, 2018, 47(16), 6296 doi: 10.1039/C8CS00255J
[7]
Gong C, Zhang Y, Chen W, et al. Electronic and optoelectronic applications based on 2D novel anisotropic transition metal dichalcogenides. Adv Sci, 2017, 4(12), 1700231 doi: 10.1002/advs.201700231
[8]
Dhyani V, Das S. High-speed scalable silicon–MoS2 p–n heterojunction photodetectors. Sci Rep, 2017, 7, 44243 doi: 10.1038/srep44243
[9]
Ye L, Li H, Chen Z, et al. Near-infrared photodetector based on MoS2/black phosphorus heterojunction. ACS Photonics, 2016, 3(4), 692 doi: 10.1021/acsphotonics.6b00079
[10]
Zhang Y I, Zhang L, Zhou C. Review of chemical vapor deposition of graphene and related applications. Acc Chem Res, 2013, 46(10), 2329 doi: 10.1021/ar300203n
[11]
Wang L, Meric I, Huang P Y, et al. One-dimensional electrical contact to a two-dimensional material. Science, 2013, 342(6158), 614 doi: 10.1126/science.1244358
Fig. 1.  (Color online) (a) Schematic representations of the Si/MoS2 p–n heterojunction photodetector. (b) AFM image of MoS2 layer at metal contact and heterojunction interface[8]. Copyright ? 2017, Springer Nature.

[1]
Neto A C, Guinea F, Peres N M, et al. The electronic properties of graphene. Rev Mod Phys, 2009, 81(1), 109 doi: 10.1103/RevModPhys.81.109
[2]
Mueller T, Xia F, Avouris P. Graphene photodetectors for high-speed optical communications. Nat Photonics, 2010, 4(5), 297 doi: 10.1038/nphoton.2010.40
[3]
Lara-Avila S, Danilov A, Golubev D, et al. Towards quantum-limited coherent detection of terahertz waves in charge-neutral graphene. Nat Astron, 2019, 3(11), 983 doi: 10.1038/s41550-019-0843-7
[4]
Li X, Zhu M, Du M, et al. High detectivity graphene–silicon heterojunction photodetector. Small, 2016, 12(5), 595 doi: 10.1002/smll.201502336
[5]
Huang M, Wang M, Chen C, et al. Broadband black-phosphorus photodetectors with high responsivity. Adv Mater, 2016, 28(18), 3481 doi: 10.1002/adma.201506352
[6]
Wang F, Wang Z, Yin L, et al. 2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection. Chem Soc Rev, 2018, 47(16), 6296 doi: 10.1039/C8CS00255J
[7]
Gong C, Zhang Y, Chen W, et al. Electronic and optoelectronic applications based on 2D novel anisotropic transition metal dichalcogenides. Adv Sci, 2017, 4(12), 1700231 doi: 10.1002/advs.201700231
[8]
Dhyani V, Das S. High-speed scalable silicon–MoS2 p–n heterojunction photodetectors. Sci Rep, 2017, 7, 44243 doi: 10.1038/srep44243
[9]
Ye L, Li H, Chen Z, et al. Near-infrared photodetector based on MoS2/black phosphorus heterojunction. ACS Photonics, 2016, 3(4), 692 doi: 10.1021/acsphotonics.6b00079
[10]
Zhang Y I, Zhang L, Zhou C. Review of chemical vapor deposition of graphene and related applications. Acc Chem Res, 2013, 46(10), 2329 doi: 10.1021/ar300203n
[11]
Wang L, Meric I, Huang P Y, et al. One-dimensional electrical contact to a two-dimensional material. Science, 2013, 342(6158), 614 doi: 10.1126/science.1244358

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    Received: Revised: Online: Accepted Manuscript: 26 May 2020Uncorrected proof: 02 June 2020Published: 04 August 2020

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      Jingshu Zhou, Juehan Yang, Zhongming Wei. Photodetectors based on 2D material/Si heterostructure[J]. Journal of Semiconductors, 2020, 41(8): 080401. doi: 10.1088/1674-4926/41/8/080401 ****J S Zhou, J H Yang, Z M Wei, Photodetectors based on 2D material/Si heterostructure[J]. J. Semicond., 2020, 41(8): 080401. doi: 10.1088/1674-4926/41/8/080401.
      Citation:
      Jingshu Zhou, Juehan Yang, Zhongming Wei. Photodetectors based on 2D material/Si heterostructure[J]. Journal of Semiconductors, 2020, 41(8): 080401. doi: 10.1088/1674-4926/41/8/080401 ****
      J S Zhou, J H Yang, Z M Wei, Photodetectors based on 2D material/Si heterostructure[J]. J. Semicond., 2020, 41(8): 080401. doi: 10.1088/1674-4926/41/8/080401.

      Photodetectors based on 2D material/Si heterostructure

      DOI: 10.1088/1674-4926/41/8/080401

      • State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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