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J. Semicond. > 2020, Volume 41?>?Issue 3?> 032102

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Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch

Lin Luo, Jun Liu, Guofang Wang and Yuxing Wu

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• Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, ChinaKey Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China

• Lin Luo
• Jun Liu
• Guofang Wang
• Yuxing Wu

 Corresponding author: Jun Liu, ljun77@hdu.edu.cn

DOI: 10.1088/1674-4926/41/3/032102

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Abstract: This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode. The extraction method for the proposed model is developed. A 2-gate switch structure is fabricated on a commercial 0.5 μm AlGaAs/GaAs pHEMT technology to verify the proposed model. Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.

Key words: GaAs pHEMTs, switch, small-signal model, parameter extraction

References

[1]	Tosaka H, Fujii T, Miyakoshi K, et al. An antenna switch MMIC using E/D mode p-HEMT for GSM/DCS/PCS/WCDMA bands application. IEEE MTT-S International Microwave Symposium Digest, 2003, 519
[2]	Chiu H C, Cheng C S, Wu C S. Enhancement-and depletion-mode InGaP/InGaAs pHEMTs on 6-inch GaAs substrate. 2005 Asia-Pacific Microwave Conference Proceedings, 2005, 4
[3]	Khusro A, Hashmi M S, Ansari A Q, et al. An accurate and simplified small signal parameter extraction method for GaN HEMT. Int J Circuit Theory Appl, 2019, 47(6), 941 doi: 10.1002/cta.2622
[4]	Chen Y, Xu Y, Luo Y, et al. A reliable and efficient small-signal parameter extraction method for GaN HEMTs. Int J Numer Model: Electron Networks, Devices Fields, 2018, e2540 doi: 10.1002/jnm.2540
[5]	Bilevich D V, Popov A A, Salnikov A S, et al. Automatic nonlinear modeling technique for GaAs HEMT. 2018 Dynamics of Systems, Mechanisms and Machines (Dynamics), 2018, 1
[6]	Yu L, Zheng Y K, Zhang S, et al. Small-signal model parameter extraction for AlGaN/GaN HEMT. J Semicond, 2016, 37(3), 034003 doi: 10.1088/1674-4926/37/3/034003
[7]	Gibiino G P, Santarelli A, Filicori F. Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements. Int J Microwave Wireless Technol, 2019, 11(5/6), 431 doi: 10.1017/S1759078719000059
[8]	Changsi W, Yuehang X, Zhang W, et al. An improved temperature-dependent large signal model of microwave GaN HEMTs. J Semicond, 2016, 37(7), 074006 doi: 10.1088/1674-4926/37/7/074006
[9]	Yu W H, Yang S Y, Hou Y F, et al. Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTS. J Infrared Millimeter Waves, 2018, 37(6), 683 doi: 10.11972/j.issn.1001-9014.2018.06.008
[10]	Panda J, Jena K, Swain R, et al. Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT. J Semicond, 2016, 37(4), 044003 doi: 10.1088/1674-4926/37/4/044003
[11]	Panda D K, Lenka T R. Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications. J Semicond, 2017, 38(6), 064002 doi: 10.1088/1674-4926/38/6/064002
[12]	Jain N, Gutmann R J. Modeling and design of GaAs MESFET control devices for broad-band applications. IEEE Trans Microwave Theory Tech, 1990, 38(2), 109 doi: 10.1109/22.46418
[13]	Ehoud A, Dunleavy L P, Lazar S C, et al. Extraction techniques for FET switch modeling. IEEE Trans Microwave Theory Tech, 1995, 43(8), 1863 doi: 10.1109/22.402273
[14]	Takatani S, Chen C D. Nonlinear steady-state III–V FET model for microwave antenna switch applications. IEEE Trans Electron Devices, 2011, 58(12), 4301 doi: 10.1109/TED.2011.2169415
[15]	Tao Y, Hu Z F, Fan Y, et al. Direct extraction method of HEMT switch small-signal model with multiparasitic capacitive current path. Int J RF Microwave Comput-Aid Eng, 2019, 29(6), e21690 doi: 10.1002/mmce.21690
[16]	Geng M, Li P X, Luo W J, et al. Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method. Chin Phys B, 2016, 25(11), 117301 doi: 10.1088/1674-1056/25/11/117301
[17]	Alt A R, Marti D, Bolognesi C R. Transistor modeling: Robust small-signal equivalent circuit extraction in various HEMT technologies. IEEE Microwave Mag, 2013, 14(4), 83 doi: 10.1109/MMM.2013.2248593
[18]	White P M, Healy R M. Improved equivalent circuit for determination of mesfet and hemt parasitic capacitors from "coldfet" measurements. IEEE Microwave Guided Wave Letts, 1993, 3(12), 453 doi: 10.1109/75.251398
[19]	Dambrine G, Cappy A, Heliodore F, et al. A new method for determining the FET small-signal equivalent circuit. IEEE Trans Microwave Theory Tech, 1988, 36(7), 1151 doi: 10.1109/22.3650

Fig. 1.  Cross-sectional structure of the dual-gate GaAs pHEMT switch.

DownLoad: Full-Size Img PowerPoint

Fig. 2.  (Color online) Layout of the dual-gate GaAs pHEMT switch(125 μm × 5).

DownLoad: Full-Size Img PowerPoint

Fig. 3.  Small-signal equivalent circuit of the dual-gate GaAs pHEMT switch.

DownLoad: Full-Size Img PowerPoint

Fig. 4.  (Color online) Extracted parasitic capacitances versus frequency.

DownLoad: Full-Size Img PowerPoint

Fig. 5.  Equivalent circuit of the GaAs pHEMT switch under the condition (V_ds = 0 V, V_gs = 0 V).

DownLoad: Full-Size Img PowerPoint

Fig. 6.  (Color online) Extracted parasitic inductors versus frequency.

DownLoad: Full-Size Img PowerPoint

Fig. 7.  The intrinsic part with R_G, which blocks the RF signal.

DownLoad: Full-Size Img PowerPoint

Fig. 8.  (Color online) Intrinsic capacitances versus frequency for the common-gate GaAs HEMT without R_G.

DownLoad: Full-Size Img PowerPoint

Fig. 9.  Equivalent circuits of the dual-gate GaAs pHEMT switch.

DownLoad: Full-Size Img PowerPoint

Fig. 10.  (Color online) Comparison of the S-parameters between the simulation (-) and measurement (◇) over a frequency range of 0.1–20 GHz for a device with size of 5 × 125 μm: (a) dual-gate off state, (b) dual-gate on state, (c) triple-gate off state, (d) triple-gate on state, (e) quadruple-gate off state, and (f) quadruple-gate on state.

DownLoad: Full-Size Img PowerPoint

Fig. 11.  (Color online) Illustration of the simulated and measured insertion loss and isolation (0.1–20 GHz) for a device with a size of 5 × 125 μm. (a) Insertion loss (dual-gate off state). (b) Isolation (dual-gate off state). (c) Insertion loss (triple-gate on state). (d) Isolation (triple-gate off state). (e) Insertion loss (quadruple-gate on state). (f) Isolation (quadruple-gate off state).

DownLoad: Full-Size Img PowerPoint

Table 1.   Intrinsic elements of the GaAs HEMT switch with a gate size of 5 × 125 μm.

State	Cgd	Cgs	Cds	Cgg*	Rds
On state	1.5 pF	1.5 pF	20.1 fF	74.2 fF	4.5 Ω
Off state	145 fF	137 fF	20.1 fF	64 fF	96 kΩ

DownLoad: CSV

Table 2.   Intrinsic parameters of GaAs HEMT switches with different gates.

Gate	Dual	Triple	Quadruple
Cds(on) (fF)	20.1	15.21	11
Cgs(on) (pF)	1.5	2.12	2.82
Cgd(on) (pF)	1.5	2.15	2.73
Rds(on) (Ω)	4.5	5.76	7
Cds(off) (fF)	20.1	15.21	11
Cgs(off) (fF)	137	144	152
Cgd(off) (fF)	145	148	161
Rds(off) (kΩ)	96	182	160
Cgg*(off) (fF)	64	76.27	121.6

DownLoad: CSV

Table 3.   The error percentage of GaAs HEMT switches with different gates.

Gate	Dual	Triple	Quadruple
S11(off)	0.7586	0.909	1.131
S12(off)	2.519	2.294	1.981
S21(off)	2.412	2.378	2.066
S22(off)	1.362	2.518	1.746
S11(on)	2.257	2.477	2.197
S12(on)	1.157	2.285	2.805
S21(on)	0.7694	0.6054	0.604
S22(on)	2.2924	1.201	0.573

DownLoad: CSV

[1]	Tosaka H, Fujii T, Miyakoshi K, et al. An antenna switch MMIC using E/D mode p-HEMT for GSM/DCS/PCS/WCDMA bands application. IEEE MTT-S International Microwave Symposium Digest, 2003, 519
[2]	Chiu H C, Cheng C S, Wu C S. Enhancement-and depletion-mode InGaP/InGaAs pHEMTs on 6-inch GaAs substrate. 2005 Asia-Pacific Microwave Conference Proceedings, 2005, 4
[3]	Khusro A, Hashmi M S, Ansari A Q, et al. An accurate and simplified small signal parameter extraction method for GaN HEMT. Int J Circuit Theory Appl, 2019, 47(6), 941 doi: 10.1002/cta.2622
[4]	Chen Y, Xu Y, Luo Y, et al. A reliable and efficient small-signal parameter extraction method for GaN HEMTs. Int J Numer Model: Electron Networks, Devices Fields, 2018, e2540 doi: 10.1002/jnm.2540
[5]	Bilevich D V, Popov A A, Salnikov A S, et al. Automatic nonlinear modeling technique for GaAs HEMT. 2018 Dynamics of Systems, Mechanisms and Machines (Dynamics), 2018, 1
[6]	Yu L, Zheng Y K, Zhang S, et al. Small-signal model parameter extraction for AlGaN/GaN HEMT. J Semicond, 2016, 37(3), 034003 doi: 10.1088/1674-4926/37/3/034003
[7]	Gibiino G P, Santarelli A, Filicori F. Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements. Int J Microwave Wireless Technol, 2019, 11(5/6), 431 doi: 10.1017/S1759078719000059
[8]	Changsi W, Yuehang X, Zhang W, et al. An improved temperature-dependent large signal model of microwave GaN HEMTs. J Semicond, 2016, 37(7), 074006 doi: 10.1088/1674-4926/37/7/074006
[9]	Yu W H, Yang S Y, Hou Y F, et al. Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTS. J Infrared Millimeter Waves, 2018, 37(6), 683 doi: 10.11972/j.issn.1001-9014.2018.06.008
[10]	Panda J, Jena K, Swain R, et al. Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT. J Semicond, 2016, 37(4), 044003 doi: 10.1088/1674-4926/37/4/044003
[11]	Panda D K, Lenka T R. Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications. J Semicond, 2017, 38(6), 064002 doi: 10.1088/1674-4926/38/6/064002
[12]	Jain N, Gutmann R J. Modeling and design of GaAs MESFET control devices for broad-band applications. IEEE Trans Microwave Theory Tech, 1990, 38(2), 109 doi: 10.1109/22.46418
[13]	Ehoud A, Dunleavy L P, Lazar S C, et al. Extraction techniques for FET switch modeling. IEEE Trans Microwave Theory Tech, 1995, 43(8), 1863 doi: 10.1109/22.402273
[14]	Takatani S, Chen C D. Nonlinear steady-state III–V FET model for microwave antenna switch applications. IEEE Trans Electron Devices, 2011, 58(12), 4301 doi: 10.1109/TED.2011.2169415
[15]	Tao Y, Hu Z F, Fan Y, et al. Direct extraction method of HEMT switch small-signal model with multiparasitic capacitive current path. Int J RF Microwave Comput-Aid Eng, 2019, 29(6), e21690 doi: 10.1002/mmce.21690
[16]	Geng M, Li P X, Luo W J, et al. Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method. Chin Phys B, 2016, 25(11), 117301 doi: 10.1088/1674-1056/25/11/117301
[17]	Alt A R, Marti D, Bolognesi C R. Transistor modeling: Robust small-signal equivalent circuit extraction in various HEMT technologies. IEEE Microwave Mag, 2013, 14(4), 83 doi: 10.1109/MMM.2013.2248593
[18]	White P M, Healy R M. Improved equivalent circuit for determination of mesfet and hemt parasitic capacitors from "coldfet" measurements. IEEE Microwave Guided Wave Letts, 1993, 3(12), 453 doi: 10.1109/75.251398
[19]	Dambrine G, Cappy A, Heliodore F, et al. A new method for determining the FET small-signal equivalent circuit. IEEE Trans Microwave Theory Tech, 1988, 36(7), 1151 doi: 10.1109/22.3650

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Received: 22 July 2019 Revised: 20 October 2019 Online: Accepted Manuscript: 10 January 2020Uncorrected proof: 16 January 2020Published: 01 March 2020

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Article Navigation >  Journal of Semiconductors  > 2020  >  41(3): 032102

Lin Luo, Jun Liu, Guofang Wang, Yuxing Wu. Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch[J]. Journal of Semiconductors, 2020, 41(3): 032102. doi: 10.1088/1674-4926/41/3/032102 ****L Luo, J Liu, G F Wang, Y X Wu, Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch[J]. J. Semicond., 2020, 41(3): 032102. doi: 10.1088/1674-4926/41/3/032102.

Citation:

Lin Luo, Jun Liu, Guofang Wang, Yuxing Wu. Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch[J]. Journal of Semiconductors, 2020, 41(3): 032102. doi: 10.1088/1674-4926/41/3/032102 **** L Luo, J Liu, G F Wang, Y X Wu, Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch[J]. J. Semicond., 2020, 41(3): 032102. doi: 10.1088/1674-4926/41/3/032102.

Lin Luo, Jun Liu, Guofang Wang, Yuxing Wu. Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch[J]. Journal of Semiconductors, 2020, 41(3): 032102. doi: 10.1088/1674-4926/41/3/032102 ****L Luo, J Liu, G F Wang, Y X Wu, Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch[J]. J. Semicond., 2020, 41(3): 032102. doi: 10.1088/1674-4926/41/3/032102.

Citation:

Lin Luo, Jun Liu, Guofang Wang, Yuxing Wu. Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch[J]. Journal of Semiconductors, 2020, 41(3): 032102. doi: 10.1088/1674-4926/41/3/032102 **** L Luo, J Liu, G F Wang, Y X Wu, Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch[J]. J. Semicond., 2020, 41(3): 032102. doi: 10.1088/1674-4926/41/3/032102.

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Small-signal modeling and parameter extraction method for a multigate GaAs pHEMT switch

DOI: 10.1088/1674-4926/41/3/032102

• Lin Luo, 
• Jun Liu , 
• Guofang Wang, 
• Yuxing Wu

• Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China

More Information

• Corresponding author: ljun77@hdu.edu.cn
• Received Date: 2019-07-22
  
• Revised Date: 2019-10-20
• Published Date: 2020-03-01

Abstract

• Abstract

  This paper presents an accurate small-signal model for multi-gate GaAs pHEMTs in switching-mode. The extraction method for the proposed model is developed. A 2-gate switch structure is fabricated on a commercial 0.5 μm AlGaAs/GaAs pHEMT technology to verify the proposed model. Excellent agreement has been obtained between the measured and simulated results over a wide frequency range.

   

  Keywords:
  • GaAs pHEMTs, 
  • switch, 
  • small-signal model, 
  • parameter extraction
FullText(HTML)
References(19)

• References

  [1]	Tosaka H, Fujii T, Miyakoshi K, et al. An antenna switch MMIC using E/D mode p-HEMT for GSM/DCS/PCS/WCDMA bands application. IEEE MTT-S International Microwave Symposium Digest, 2003, 519
  [2]	Chiu H C, Cheng C S, Wu C S. Enhancement-and depletion-mode InGaP/InGaAs pHEMTs on 6-inch GaAs substrate. 2005 Asia-Pacific Microwave Conference Proceedings, 2005, 4
  [3]	Khusro A, Hashmi M S, Ansari A Q, et al. An accurate and simplified small signal parameter extraction method for GaN HEMT. Int J Circuit Theory Appl, 2019, 47(6), 941 doi: 10.1002/cta.2622
  [4]	Chen Y, Xu Y, Luo Y, et al. A reliable and efficient small-signal parameter extraction method for GaN HEMTs. Int J Numer Model: Electron Networks, Devices Fields, 2018, e2540 doi: 10.1002/jnm.2540
  [5]	Bilevich D V, Popov A A, Salnikov A S, et al. Automatic nonlinear modeling technique for GaAs HEMT. 2018 Dynamics of Systems, Mechanisms and Machines (Dynamics), 2018, 1
  [6]	Yu L, Zheng Y K, Zhang S, et al. Small-signal model parameter extraction for AlGaN/GaN HEMT. J Semicond, 2016, 37(3), 034003 doi: 10.1088/1674-4926/37/3/034003
  [7]	Gibiino G P, Santarelli A, Filicori F. Charge-conservative GaN HEMT nonlinear modeling from non-isodynamic multi-bias S-parameter measurements. Int J Microwave Wireless Technol, 2019, 11(5/6), 431 doi: 10.1017/S1759078719000059
  [8]	Changsi W, Yuehang X, Zhang W, et al. An improved temperature-dependent large signal model of microwave GaN HEMTs. J Semicond, 2016, 37(7), 074006 doi: 10.1088/1674-4926/37/7/074006
  [9]	Yu W H, Yang S Y, Hou Y F, et al. Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTS. J Infrared Millimeter Waves, 2018, 37(6), 683 doi: 10.11972/j.issn.1001-9014.2018.06.008
  [10]	Panda J, Jena K, Swain R, et al. Modeling on oxide dependent 2DEG sheet charge density and threshold voltage in AlGaN/GaN MOSHEMT. J Semicond, 2016, 37(4), 044003 doi: 10.1088/1674-4926/37/4/044003
  [11]	Panda D K, Lenka T R. Modeling and simulation of enhancement mode p-GaN Gate AlGaN/GaN HEMT for RF circuit switch applications. J Semicond, 2017, 38(6), 064002 doi: 10.1088/1674-4926/38/6/064002
  [12]	Jain N, Gutmann R J. Modeling and design of GaAs MESFET control devices for broad-band applications. IEEE Trans Microwave Theory Tech, 1990, 38(2), 109 doi: 10.1109/22.46418
  [13]	Ehoud A, Dunleavy L P, Lazar S C, et al. Extraction techniques for FET switch modeling. IEEE Trans Microwave Theory Tech, 1995, 43(8), 1863 doi: 10.1109/22.402273
  [14]	Takatani S, Chen C D. Nonlinear steady-state III–V FET model for microwave antenna switch applications. IEEE Trans Electron Devices, 2011, 58(12), 4301 doi: 10.1109/TED.2011.2169415
  [15]	Tao Y, Hu Z F, Fan Y, et al. Direct extraction method of HEMT switch small-signal model with multiparasitic capacitive current path. Int J RF Microwave Comput-Aid Eng, 2019, 29(6), e21690 doi: 10.1002/mmce.21690
  [16]	Geng M, Li P X, Luo W J, et al. Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method. Chin Phys B, 2016, 25(11), 117301 doi: 10.1088/1674-1056/25/11/117301
  [17]	Alt A R, Marti D, Bolognesi C R. Transistor modeling: Robust small-signal equivalent circuit extraction in various HEMT technologies. IEEE Microwave Mag, 2013, 14(4), 83 doi: 10.1109/MMM.2013.2248593
  [18]	White P M, Healy R M. Improved equivalent circuit for determination of mesfet and hemt parasitic capacitors from "coldfet" measurements. IEEE Microwave Guided Wave Letts, 1993, 3(12), 453 doi: 10.1109/75.251398
  [19]	Dambrine G, Cappy A, Heliodore F, et al. A new method for determining the FET small-signal equivalent circuit. IEEE Trans Microwave Theory Tech, 1988, 36(7), 1151 doi: 10.1109/22.3650

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• Fig. 1. Cross-sectional structure of the dual-gate GaAs pHEMT switch.
• Fig. 2. (Color online) Layout of the dual-gate GaAs pHEMT switch(125 μm × 5).
• Fig. 3. Small-signal equivalent circuit of the dual-gate GaAs pHEMT switch.
• Fig. 4. (Color online) Extracted parasitic capacitances versus frequency.
• Fig. 5. Equivalent circuit of the GaAs pHEMT switch under the condition (V_ds = 0 V, V_gs = 0 V).
• Fig. 6. (Color online) Extracted parasitic inductors versus frequency.
• Fig. 7. The intrinsic part with R_G, which blocks the RF signal.
• Fig. 8. (Color online) Intrinsic capacitances versus frequency for the common-gate GaAs HEMT without R_G.
• Fig. 9. Equivalent circuits of the dual-gate GaAs pHEMT switch.
• Fig. 10. (Color online) Comparison of the S-parameters between the simulation (-) and measurement (◇) over a frequency range of 0.1–20 GHz for a device with size of 5 × 125 μm: (a) dual-gate off state, (b) dual-gate on state, (c) triple-gate off state, (d) triple-gate on state, (e) quadruple-gate off state, and (f) quadruple-gate on state.
• Fig. 11. (Color online) Illustration of the simulated and measured insertion loss and isolation (0.1–20 GHz) for a device with a size of 5 × 125 μm. (a) Insertion loss (dual-gate off state). (b) Isolation (dual-gate off state). (c) Insertion loss (triple-gate on state). (d) Isolation (triple-gate off state). (e) Insertion loss (quadruple-gate on state). (f) Isolation (quadruple-gate off state).