香蕉久久这里只有精品-91国产自拍免费视频-免费A级毛片无码专区网站-无码八A片人妻少妇久久-特黄三级又长又粗又爽-国产精品人成在线播放-国产男女猛烈无遮挡性视频网站-丰满五十路熟女高清免费视频-欧美日韩午夜激情福利

J. Semicond. > 2019, Volume 40?>?Issue 10?> 102301

ARTICLES

Size effect on optical performance of blue light-emitting diodes

Chang Ge1, 2, Jing Li1, 2, , Guohong Wang1, 2, 3, Kang Su1, 2 and Xingdong Lu1, 2

+ Author Affiliations

 Corresponding author: Jing Li, Email: lijing2006@semi.ac.cn

DOI: 10.1088/1674-4926/40/10/102301

PDF

Turn off MathJax

Abstract: In this paper, size effects on optical performance of blue light-emitting diodes (LEDs) are investigated. The essential physical mechanism is studied by fabricating LEDs with various sizes of the active area and testing optical characteristics. It is found that micro-LEDs have better light extracting efficiency and thermal dissipation compared with broad-area LEDs, which is likely due to the small ratio of perimeter and active area. Furthermore, micro-LEDs are more beneficial for displays due to the stable wavelength under the low pulse width modulation (PWM) current density.

Key words: micro-LED, size dependence, light extract efficiency, strain relaxation



[1]
Jin S X, Li J, Li J Z, et al. GaN microdisk light emitting diodes. Appl Phys Lett, 2000, 76(5), 631 doi: 10.1063/1.125841
[2]
Jeon C W, Choi H W, Edwards P R, et al. 64 × 64 matrix-addressable arrays of GaN-based micro-LEDs. Lasers & Electro-optics Society, Leos, the Meeting of the IEEE, 2002
[3]
Akhter M. A LED micro-display with 90 × 90 pixels on a 80 μm pitch. Microelectronics Packaging Conference, 2016
[4]
Tian P, Mckendry J J D, Gong Z, et al. Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates. J Appl Phys, 2014, 115(3), 033112 doi: 10.1063/1.4862298
[5]
Gong Z, Gu E, Jin S R, et al. Efficient flip-chip InGaN micro-pixellated light-emitting diode arrays: promising candidates for micro-displays and colour conversion. J Phys D, 2008, 41(9), 094002 doi: 10.1088/0022-3727/41/9/094002
[6]
Kang C M, Kong D J, Shim J P, et al. Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display. Opt Express, 2017, 25(3), 2489 doi: 10.1364/OE.25.002489
[7]
Choi H W, Jeon C W, Dawson M D, et al. Fabrication and performance of parallel-addressed InGaN micro-LED arrays. IEEE Photonics Technol Lett, 2003, 15(4), 510 doi: 10.1109/LPT.2003.809257
[8]
Gong Z, Jin S, Chen Y, et al. Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes. J Appl Phys, 2010, 107(1), 013103 doi: 10.1063/1.3276156
[9]
Tao Y B, Wang S Y, Chen Z Z, et al. Size effect on efficiency droop of blue light emitting diode. Physica Status Solidi C, 2012, 9(3/4), 616 doi: 10.1002/pssc.201100483
[10]
Dai L, Zhang N, Lin J Y, et al. Comparison of optical transitions in InGaN quantum well structures and microdisks. J Appl Phys, 2001, 89, 4951 doi: 10.1063/1.1355280
[11]
Demangeot F, Gleize J, Frandon J, et al. Optical investigation of micrometer and nanometer-size individual GaN pillars fabricated by reactive ion etching. J Appl Phys, 2002, 91(10), 6520 doi: 10.1063/1.1468908
[12]
Jin S X, Shakya J, Lin J Y, et al. Size dependence of III-nitride microdisk light-emitting diode characteristics. Appl Phys Lett, 2001, 78(22), 3532 doi: 10.1063/1.1376152
[13]
Lu H M, Chen G X. Influence of polarization effect on optoelectronic properties of InGaN/GaN multiple quantum well. Chin J Lumin, 2011, 32(3), 266 doi: 10.3788/fgxb20113203.0266
[14]
Arnaudov B, Domanevskii D S, Evtimova S, et al. Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers. Microelectron J, 2009, 40(2), 346 doi: 10.1016/j.mejo.2008.07.064
[15]
Ryou J H, Yoder P D, Liu J, et al. Control of quantum-confined stark effect in ingan-based quantum wells. IEEE J Sel Top Quantum Electron, 2009, 15(4), 1080 doi: 10.1109/JSTQE.2009.2014170
[16]
Cho J, Sone C, Park Y, et al. Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift. Phys Status Solidi A, 2005, 202, 1869 doi: 10.1002/pssa.200520041
[17]
Senawiratne J, Chatterjee A, Detchprohm T, et al. Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes. Thin Solid Films, 2010, 518, 1732 doi: 10.1016/j.tsf.2009.11.073
[18]
Schubert E F, Miller J N. Light-emitting diodes. New York: Cambridge University Press, 2006, 87
Fig. 1.  (Color online) Optical micrograph of LEDs. The sizes of active area range from 20 to 120 μm.

Fig. 2.  (Color online) J–V characteristics of micro-LEDs with different sizes.

Fig. 3.  (Color online) Normalized EQE vary with forward current density of micro-LEDs with different sizes.

Fig. 4.  (Color online) Normalized EQE vary with chip size at 100, 300, and 500A/cm2.

Fig. 5.  (Color online) (a) Peak wavelength and (b) change of peak wavelength vary with forward current density of micro-LEDs with different sizes.

Fig. 6.  (Color online) Full width at half maximum (FWHM) varying with forward current of micro-LEDs with different sizes.

Fig. 7.  (Color online) Current density dependence of Δλd driven by PWM at (a) 500 and (b) 100 A/cm2 of micro LEDs with different sizes.

Table 1.   The geometric parameters of LEDs.

D (μm)S (μm2)L/SLE/S
204000.20.351
309000.130.322
4016000.10.172
6036000.0670.168
8064000.050.601
100100000.040.382
120144000.0330.267
DownLoad: CSV
[1]
Jin S X, Li J, Li J Z, et al. GaN microdisk light emitting diodes. Appl Phys Lett, 2000, 76(5), 631 doi: 10.1063/1.125841
[2]
Jeon C W, Choi H W, Edwards P R, et al. 64 × 64 matrix-addressable arrays of GaN-based micro-LEDs. Lasers & Electro-optics Society, Leos, the Meeting of the IEEE, 2002
[3]
Akhter M. A LED micro-display with 90 × 90 pixels on a 80 μm pitch. Microelectronics Packaging Conference, 2016
[4]
Tian P, Mckendry J J D, Gong Z, et al. Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates. J Appl Phys, 2014, 115(3), 033112 doi: 10.1063/1.4862298
[5]
Gong Z, Gu E, Jin S R, et al. Efficient flip-chip InGaN micro-pixellated light-emitting diode arrays: promising candidates for micro-displays and colour conversion. J Phys D, 2008, 41(9), 094002 doi: 10.1088/0022-3727/41/9/094002
[6]
Kang C M, Kong D J, Shim J P, et al. Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display. Opt Express, 2017, 25(3), 2489 doi: 10.1364/OE.25.002489
[7]
Choi H W, Jeon C W, Dawson M D, et al. Fabrication and performance of parallel-addressed InGaN micro-LED arrays. IEEE Photonics Technol Lett, 2003, 15(4), 510 doi: 10.1109/LPT.2003.809257
[8]
Gong Z, Jin S, Chen Y, et al. Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes. J Appl Phys, 2010, 107(1), 013103 doi: 10.1063/1.3276156
[9]
Tao Y B, Wang S Y, Chen Z Z, et al. Size effect on efficiency droop of blue light emitting diode. Physica Status Solidi C, 2012, 9(3/4), 616 doi: 10.1002/pssc.201100483
[10]
Dai L, Zhang N, Lin J Y, et al. Comparison of optical transitions in InGaN quantum well structures and microdisks. J Appl Phys, 2001, 89, 4951 doi: 10.1063/1.1355280
[11]
Demangeot F, Gleize J, Frandon J, et al. Optical investigation of micrometer and nanometer-size individual GaN pillars fabricated by reactive ion etching. J Appl Phys, 2002, 91(10), 6520 doi: 10.1063/1.1468908
[12]
Jin S X, Shakya J, Lin J Y, et al. Size dependence of III-nitride microdisk light-emitting diode characteristics. Appl Phys Lett, 2001, 78(22), 3532 doi: 10.1063/1.1376152
[13]
Lu H M, Chen G X. Influence of polarization effect on optoelectronic properties of InGaN/GaN multiple quantum well. Chin J Lumin, 2011, 32(3), 266 doi: 10.3788/fgxb20113203.0266
[14]
Arnaudov B, Domanevskii D S, Evtimova S, et al. Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers. Microelectron J, 2009, 40(2), 346 doi: 10.1016/j.mejo.2008.07.064
[15]
Ryou J H, Yoder P D, Liu J, et al. Control of quantum-confined stark effect in ingan-based quantum wells. IEEE J Sel Top Quantum Electron, 2009, 15(4), 1080 doi: 10.1109/JSTQE.2009.2014170
[16]
Cho J, Sone C, Park Y, et al. Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift. Phys Status Solidi A, 2005, 202, 1869 doi: 10.1002/pssa.200520041
[17]
Senawiratne J, Chatterjee A, Detchprohm T, et al. Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes. Thin Solid Films, 2010, 518, 1732 doi: 10.1016/j.tsf.2009.11.073
[18]
Schubert E F, Miller J N. Light-emitting diodes. New York: Cambridge University Press, 2006, 87

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 5034 Times PDF downloads: 83 Times Cited by: 0 Times

    History

    Received: 20 March 2019 Revised: 31 May 2019 Online: Accepted Manuscript: 03 September 2019Uncorrected proof: 03 September 2019Published: 01 October 2019

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗(yàn)證碼錯誤
      Chang Ge, Jing Li, Guohong Wang, Kang Su, Xingdong Lu. Size effect on optical performance of blue light-emitting diodes[J]. Journal of Semiconductors, 2019, 40(10): 102301. doi: 10.1088/1674-4926/40/10/102301 ****C Ge, J Li, G H Wang, K Su, X D Lu, Size effect on optical performance of blue light-emitting diodes[J]. J. Semicond., 2019, 40(10): 102301. doi: 10.1088/1674-4926/40/10/102301.
      Citation:
      Chang Ge, Jing Li, Guohong Wang, Kang Su, Xingdong Lu. Size effect on optical performance of blue light-emitting diodes[J]. Journal of Semiconductors, 2019, 40(10): 102301. doi: 10.1088/1674-4926/40/10/102301 ****
      C Ge, J Li, G H Wang, K Su, X D Lu, Size effect on optical performance of blue light-emitting diodes[J]. J. Semicond., 2019, 40(10): 102301. doi: 10.1088/1674-4926/40/10/102301.

      Size effect on optical performance of blue light-emitting diodes

      DOI: 10.1088/1674-4926/40/10/102301
      • 1.

        Research and Development Center for Solid State Lighting, Institute of Semiconductor, Chinese Academy of Science, Beijing 100083, China

      • 2.

        Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Science, Beijing 100049, China

      • 3.

        Yangzhou Zhongke Semiconductor Lighting Co. LTD, Yangzhou 225131, China

      More Information
      • Corresponding author: Email: lijing2006@semi.ac.cn
      • Received Date: 2019-03-20
      • Revised Date: 2019-05-31
      • Published Date: 2019-10-01

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return