Mid-infrared lasers on silicon operating close to room temperature

Hongtao Lin

doi:10.1088/1674-4926/40/10/100202

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J. Semicond. > 2019, Volume 40?>?Issue 10?> 100202

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Mid-infrared lasers on silicon operating close to room temperature

Hongtao Lin

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DOI: 10.1088/1674-4926/40/10/100202

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Received: Revised: Online: Published: 01 October 2019

Article Navigation > Journal of Semiconductors > 2019 > 40(10): 100202

Hongtao Lin. Mid-infrared lasers on silicon operating close to room temperature[J]. Journal of Semiconductors, 2019, 40(10): 100202. doi: 10.1088/1674-4926/40/10/100202 ****H T Lin, Mid-infrared lasers on silicon operating close to room temperature[J]. J. Semicond., 2019, 40(10): 100202. doi: 10.1088/1674-4926/40/10/100202.

Citation:

Hongtao Lin. Mid-infrared lasers on silicon operating close to room temperature[J]. Journal of Semiconductors, 2019, 40(10): 100202. doi: 10.1088/1674-4926/40/10/100202 ****

H T Lin, Mid-infrared lasers on silicon operating close to room temperature[J]. J. Semicond., 2019, 40(10): 100202. doi: 10.1088/1674-4926/40/10/100202.

Citation:

Hongtao Lin. Mid-infrared lasers on silicon operating close to room temperature[J]. Journal of Semiconductors, 2019, 40(10): 100202. doi: 10.1088/1674-4926/40/10/100202 ****

H T Lin, Mid-infrared lasers on silicon operating close to room temperature[J]. J. Semicond., 2019, 40(10): 100202. doi: 10.1088/1674-4926/40/10/100202.

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