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J. Semicond. > 2019, Volume 40?>?Issue 1?> 010401

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Bulk gallium oxide single crystal growth

Xutang Tao

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 Corresponding author: Xutang Tao, txt@sdu.edu.cn

DOI: 10.1088/1674-4926/40/1/010401

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[1]
Higashiwaki M, Jessen G H. Guest Editorial: the dawn of gallium oxide microelectronics. Appl Phys Lett, 2018, 112, 060401 doi: 10.1063/1.5017845
[2]
Baldini M, Galazka Z, Wagner G. Recent progress in the growth of β-Ga2O3 for power electronics applications. Materials Science in Semiconductor Processing, 2018, 78, 132?146 doi: 10.1016/j.mssp.2017.10.040
[3]
Aida H, Nishiguchi K, Takeda H, et al. Growth of β-Ga2O3 single crystals by the edge-defined, film fed growth method. Jpn J Appl Phys, 2008, 47(11), 8506?8509 doi: 10.1143/JJAP.47.8506
[4]
Tomm Y, Reiche P, Klimm D, et al. Czochralski grown Ga2O3 crystals. J Cryst Growth, 2000, 220(4), 510 doi: 10.1016/S0022-0248(00)00851-4
[5]
Mastro M A, Kuramata A, Calkins J, et al. Opportunities and future directions for Ga2O3. ECS Journal of Solid State Science and Technology, 2017, 6(5), 356?359 doi: 10.1149/2.0031707jss
Fig. 1.  (Color online) Schematic of CZ and EFG process.

Table 1.   Features of melt growth methods used for growing bulk β-Ga2O3 crystals.

Method Crystal shape Crystal size (mm) Growth direction Crucible Structural quality Scalability
Verneuil Cylinder 9 × 25 (100) plane None Poor Limited
OFZ Cylinder 6 × 50
25 × 50 		<100> None Acceptable Limited
<010>
<001>
EFG Slab 50 × 75 × 3 <010> Ir Good High
60 × 55 × 18
110 × 110 × 6
VGF Cylinder 50 × 30 <010> Ir Acceptable High
VB Cylinder 25 × 25 ⊥(100) Pt?Rh Acceptable High
CZ Cylinder 10 × 30 <010> Ir Good High
20 × 70
50 × 85
Abbreviations: OFZ, optical floating zone; EFG, edge defined film-fed growth; VGF, vertical gradient freeze; VB, vertical bridgman; CZ, Czochralski.
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[1]
Higashiwaki M, Jessen G H. Guest Editorial: the dawn of gallium oxide microelectronics. Appl Phys Lett, 2018, 112, 060401 doi: 10.1063/1.5017845
[2]
Baldini M, Galazka Z, Wagner G. Recent progress in the growth of β-Ga2O3 for power electronics applications. Materials Science in Semiconductor Processing, 2018, 78, 132?146 doi: 10.1016/j.mssp.2017.10.040
[3]
Aida H, Nishiguchi K, Takeda H, et al. Growth of β-Ga2O3 single crystals by the edge-defined, film fed growth method. Jpn J Appl Phys, 2008, 47(11), 8506?8509 doi: 10.1143/JJAP.47.8506
[4]
Tomm Y, Reiche P, Klimm D, et al. Czochralski grown Ga2O3 crystals. J Cryst Growth, 2000, 220(4), 510 doi: 10.1016/S0022-0248(00)00851-4
[5]
Mastro M A, Kuramata A, Calkins J, et al. Opportunities and future directions for Ga2O3. ECS Journal of Solid State Science and Technology, 2017, 6(5), 356?359 doi: 10.1149/2.0031707jss

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    Received: 13 August 2018 Revised: 08 October 2018 Online: Accepted Manuscript: 08 January 2019Uncorrected proof: 09 January 2019Published: 07 January 2019

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      Xutang Tao. Bulk gallium oxide single crystal growth[J]. Journal of Semiconductors, 2019, 40(1): 010401. doi: 10.1088/1674-4926/40/1/010401 ****X T Tao, Bulk gallium oxide single crystal growth[J]. J. Semicond., 2019, 40(1): 010401. doi: 10.1088/1674-4926/40/1/010401.
      Citation:
      Xutang Tao. Bulk gallium oxide single crystal growth[J]. Journal of Semiconductors, 2019, 40(1): 010401. doi: 10.1088/1674-4926/40/1/010401 ****
      X T Tao, Bulk gallium oxide single crystal growth[J]. J. Semicond., 2019, 40(1): 010401. doi: 10.1088/1674-4926/40/1/010401.

      Bulk gallium oxide single crystal growth

      DOI: 10.1088/1674-4926/40/1/010401

      • State Key Laboratory of Crystal Materials & Key Laboratory of Functional Crystal Materials and Device, Shandong University, Jinan 250100, China

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      • Corresponding author: txt@sdu.edu.cn
      • Received Date: 2018-08-13
      • Revised Date: 2018-10-08
      • Published Date: 2019-01-01

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