Fig. 1.
Reverse current of sample1 before and after 30 krad irradiation.
SEMICONDUCTOR DEVICES
Yu’an Liu and Wenlang Luo
Corresponding author: Yu’an Liu, Email: danu0012004@163.com; Wenlang Luo, Email: 8102011wen@163.com
Abstract:
A correlation model between micro plasma noise and gamma irradiation of GaN-based LED is built. The reverse bias I–V characteristics and micro-plasma noise were measured in it, before and after Gamma irradiation. It is found that even after 30 krad Gamma irradiation, the GaN-based LED has soft breakdown failure. The reverse soft breakdown region current local instability of this device before irradiation is analyzed by the micro-plasma noise method. The results were obtained that if the GaN-based LED contained micro-plasma defects, it will fail after low doses (30 krad) of gamma irradiation. The results clearly reflect the micro-plasma defects induced carriers fluctuation noise and the local instability of GaN-based LED reverse bias current.
Key words: gamma irradiation, GaN-based LED, micro-plasma noise
| [1] |
Khanna R, Han D Y, Pearton S J. High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes. Appl Phys Lett, 2005, 87: 212107 doi: 10.1063/1.2132085
|
| [2] |
Khanna R, Allums K K, Abernathy C R, et al. Effects of high-dose 40 MeV on the electrical performance of InGaN light-emitting diodes. Appl Phys Lett, 2004, 85(15): 3131 doi: 10.1063/1.1803933
|
| [3] |
Gaudreau F, Carlone C, Houdayer A, et al. Spectral properties of proton irradiated gallium nitride blue diodes. IEEE Trans Nucl Sci, 2001, 48(6): 1778 doi: 10.1109/23.983130
|
| [4] |
Li C, Subramanian S. Neutron irradiation effects in GaN-based blue LEDs. IEEE Trans Nucl Sci, 2003, 50(6): 1998 doi: 10.1109/TNS.2003.821610
|
| [5] |
Khanna S M, Estan D, Houdayer A, et al. Proton radiation damage at low temperature in GaAs and GaN light-emitting diodes. IEEE Trans Nucl Sci, 2004, 51(6): 3585 doi: 10.1109/TNS.2004.839105
|
| [6] |
Liu C, Yu L Y, Wang Z G, et al. Research on the high-energy electron beam irradiation effect of GaN based LED. 47th Annual Meeting on Nuclear Technology, Mater Sci Forum, 2016, 39(12): 51
|
| [7] |
Abdullah Y, Hedzir A S, Hasbullah N F, et al. Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation. 48th Annual Meeting on Nuclear Technology, Mater Sci Forum, 2017, 888: 348
|
| [8] |
Jin Y Z, Hu Y P, Zeng X H, et al. Gamma irradiation effect of GaN multi-quantum well blue LED. Acta Phys Sin, 2010, 59(2): 1258
|
| [9] |
Sawyer S, Rumyantsev S L, Shur M S. Current and optical noise of GaN/AlGaN light emitting diodes. J Appl Phys, 2006, 100(3): 034504 doi: 10.1063/1.2204355
|
| [10] |
Ishii M, Koizumi A, Fujiwara Y. Trapping of injection charges in emission centers of GaNEu red LED characterized with 1/f noise involved in forward current. Jpn J Appl Phys, 2016, 55(1): 015801 doi: 10.7567/JJAP.55.015801
|
| [11] |
Veleschuk V P, Vlasenko A I, Kisselyuk M P, et al. Microplasma breakdown of InGaN/GaN heterostructures in high-power light-emitting diodes. J Appl Spectrosc, 2013, 80(1): 117
|
| [12] |
Park J, Kang D, Son J K, et al. Extraction of location and energy level of the trap causing random telegraph noise at reverse-biased region in GaN-based light-emitting diodes. Electron Devices, 2012, 59(12): 3495 doi: 10.1109/TED.2012.2218248
|
| [13] |
Haitz R H. Model for the electrical behavior of microplasma. J Appl Phys, 1964, 35(5): 1370 doi: 10.1063/1.1713636
|
| [14] |
McIntyre R J. Theory of microplasma instability in silicon. J Appl Phys, 2004, 32(6): 983
|
| [15] |
Marinov O, Deen M J, Antonio J, et al. Theory of microplasma ?uctuations and noise in silicon diode in avalanche breakdown. J Appl Phys, 2007, 101: 064515 doi: 10.1063/1.2654973
|
| [16] |
Chen P X. Radiation effects on semiconductor devices and integrated circuits. Beijing: National Defense Industry Press, 2005
|
| [17] |
Marinov O, Deen M J. Physical model for low frequency noise in avalanche breakdown of pn junctions. Fluct Noise Lett, 2004, 4(02): L287 doi: 10.1142/S0219477504001896
|
| [1] |
Khanna R, Han D Y, Pearton S J. High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes. Appl Phys Lett, 2005, 87: 212107 doi: 10.1063/1.2132085
|
| [2] |
Khanna R, Allums K K, Abernathy C R, et al. Effects of high-dose 40 MeV on the electrical performance of InGaN light-emitting diodes. Appl Phys Lett, 2004, 85(15): 3131 doi: 10.1063/1.1803933
|
| [3] |
Gaudreau F, Carlone C, Houdayer A, et al. Spectral properties of proton irradiated gallium nitride blue diodes. IEEE Trans Nucl Sci, 2001, 48(6): 1778 doi: 10.1109/23.983130
|
| [4] |
Li C, Subramanian S. Neutron irradiation effects in GaN-based blue LEDs. IEEE Trans Nucl Sci, 2003, 50(6): 1998 doi: 10.1109/TNS.2003.821610
|
| [5] |
Khanna S M, Estan D, Houdayer A, et al. Proton radiation damage at low temperature in GaAs and GaN light-emitting diodes. IEEE Trans Nucl Sci, 2004, 51(6): 3585 doi: 10.1109/TNS.2004.839105
|
| [6] |
Liu C, Yu L Y, Wang Z G, et al. Research on the high-energy electron beam irradiation effect of GaN based LED. 47th Annual Meeting on Nuclear Technology, Mater Sci Forum, 2016, 39(12): 51
|
| [7] |
Abdullah Y, Hedzir A S, Hasbullah N F, et al. Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation. 48th Annual Meeting on Nuclear Technology, Mater Sci Forum, 2017, 888: 348
|
| [8] |
Jin Y Z, Hu Y P, Zeng X H, et al. Gamma irradiation effect of GaN multi-quantum well blue LED. Acta Phys Sin, 2010, 59(2): 1258
|
| [9] |
Sawyer S, Rumyantsev S L, Shur M S. Current and optical noise of GaN/AlGaN light emitting diodes. J Appl Phys, 2006, 100(3): 034504 doi: 10.1063/1.2204355
|
| [10] |
Ishii M, Koizumi A, Fujiwara Y. Trapping of injection charges in emission centers of GaNEu red LED characterized with 1/f noise involved in forward current. Jpn J Appl Phys, 2016, 55(1): 015801 doi: 10.7567/JJAP.55.015801
|
| [11] |
Veleschuk V P, Vlasenko A I, Kisselyuk M P, et al. Microplasma breakdown of InGaN/GaN heterostructures in high-power light-emitting diodes. J Appl Spectrosc, 2013, 80(1): 117
|
| [12] |
Park J, Kang D, Son J K, et al. Extraction of location and energy level of the trap causing random telegraph noise at reverse-biased region in GaN-based light-emitting diodes. Electron Devices, 2012, 59(12): 3495 doi: 10.1109/TED.2012.2218248
|
| [13] |
Haitz R H. Model for the electrical behavior of microplasma. J Appl Phys, 1964, 35(5): 1370 doi: 10.1063/1.1713636
|
| [14] |
McIntyre R J. Theory of microplasma instability in silicon. J Appl Phys, 2004, 32(6): 983
|
| [15] |
Marinov O, Deen M J, Antonio J, et al. Theory of microplasma ?uctuations and noise in silicon diode in avalanche breakdown. J Appl Phys, 2007, 101: 064515 doi: 10.1063/1.2654973
|
| [16] |
Chen P X. Radiation effects on semiconductor devices and integrated circuits. Beijing: National Defense Industry Press, 2005
|
| [17] |
Marinov O, Deen M J. Physical model for low frequency noise in avalanche breakdown of pn junctions. Fluct Noise Lett, 2004, 4(02): L287 doi: 10.1142/S0219477504001896
|
Article views: 4657 Times PDF downloads: 54 Times Cited by: 0 Times
Received: 01 August 2017 Revised: 27 January 2018 Online: Accepted Manuscript: 15 March 2018Uncorrected proof: 12 April 2018Published: 01 July 2018
| Citation: |
Yu’an Liu, Wenlang Luo. Micro-plasma noise of 30 krad gamma irradiation broken-down GaN-based LED[J]. Journal of Semiconductors, 2018, 39(7): 074005. doi: 10.1088/1674-4926/39/7/074005
****
Y A Liu, W L Luo. Micro-plasma noise of 30 krad gamma irradiation broken-down GaN-based LED[J]. J. Semicond., 2018, 39(7): 074005. doi: 10.1088/1674-4926/39/7/074005.
|
Project supported by the Education Department Science and Technology Foundation of Jiangxi Province (No. GJJ160743) and the Doctoral Research Start-Up Foundation of Jinggangshan University (No. JZB15001).
A correlation model between micro plasma noise and gamma irradiation of GaN-based LED is built. The reverse bias I–V characteristics and micro-plasma noise were measured in it, before and after Gamma irradiation. It is found that even after 30 krad Gamma irradiation, the GaN-based LED has soft breakdown failure. The reverse soft breakdown region current local instability of this device before irradiation is analyzed by the micro-plasma noise method. The results were obtained that if the GaN-based LED contained micro-plasma defects, it will fail after low doses (30 krad) of gamma irradiation. The results clearly reflect the micro-plasma defects induced carriers fluctuation noise and the local instability of GaN-based LED reverse bias current.
| [1] |
Khanna R, Han D Y, Pearton S J. High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes. Appl Phys Lett, 2005, 87: 212107 doi: 10.1063/1.2132085
|
| [2] |
Khanna R, Allums K K, Abernathy C R, et al. Effects of high-dose 40 MeV on the electrical performance of InGaN light-emitting diodes. Appl Phys Lett, 2004, 85(15): 3131 doi: 10.1063/1.1803933
|
| [3] |
Gaudreau F, Carlone C, Houdayer A, et al. Spectral properties of proton irradiated gallium nitride blue diodes. IEEE Trans Nucl Sci, 2001, 48(6): 1778 doi: 10.1109/23.983130
|
| [4] |
Li C, Subramanian S. Neutron irradiation effects in GaN-based blue LEDs. IEEE Trans Nucl Sci, 2003, 50(6): 1998 doi: 10.1109/TNS.2003.821610
|
| [5] |
Khanna S M, Estan D, Houdayer A, et al. Proton radiation damage at low temperature in GaAs and GaN light-emitting diodes. IEEE Trans Nucl Sci, 2004, 51(6): 3585 doi: 10.1109/TNS.2004.839105
|
| [6] |
Liu C, Yu L Y, Wang Z G, et al. Research on the high-energy electron beam irradiation effect of GaN based LED. 47th Annual Meeting on Nuclear Technology, Mater Sci Forum, 2016, 39(12): 51
|
| [7] |
Abdullah Y, Hedzir A S, Hasbullah N F, et al. Radiation damage study of electrical properties in GaN LEDs diode after electron irradiation. 48th Annual Meeting on Nuclear Technology, Mater Sci Forum, 2017, 888: 348
|
| [8] |
Jin Y Z, Hu Y P, Zeng X H, et al. Gamma irradiation effect of GaN multi-quantum well blue LED. Acta Phys Sin, 2010, 59(2): 1258
|
| [9] |
Sawyer S, Rumyantsev S L, Shur M S. Current and optical noise of GaN/AlGaN light emitting diodes. J Appl Phys, 2006, 100(3): 034504 doi: 10.1063/1.2204355
|
| [10] |
Ishii M, Koizumi A, Fujiwara Y. Trapping of injection charges in emission centers of GaNEu red LED characterized with 1/f noise involved in forward current. Jpn J Appl Phys, 2016, 55(1): 015801 doi: 10.7567/JJAP.55.015801
|
| [11] |
Veleschuk V P, Vlasenko A I, Kisselyuk M P, et al. Microplasma breakdown of InGaN/GaN heterostructures in high-power light-emitting diodes. J Appl Spectrosc, 2013, 80(1): 117
|
| [12] |
Park J, Kang D, Son J K, et al. Extraction of location and energy level of the trap causing random telegraph noise at reverse-biased region in GaN-based light-emitting diodes. Electron Devices, 2012, 59(12): 3495 doi: 10.1109/TED.2012.2218248
|
| [13] |
Haitz R H. Model for the electrical behavior of microplasma. J Appl Phys, 1964, 35(5): 1370 doi: 10.1063/1.1713636
|
| [14] |
McIntyre R J. Theory of microplasma instability in silicon. J Appl Phys, 2004, 32(6): 983
|
| [15] |
Marinov O, Deen M J, Antonio J, et al. Theory of microplasma ?uctuations and noise in silicon diode in avalanche breakdown. J Appl Phys, 2007, 101: 064515 doi: 10.1063/1.2654973
|
| [16] |
Chen P X. Radiation effects on semiconductor devices and integrated circuits. Beijing: National Defense Industry Press, 2005
|
| [17] |
Marinov O, Deen M J. Physical model for low frequency noise in avalanche breakdown of pn junctions. Fluct Noise Lett, 2004, 4(02): L287 doi: 10.1142/S0219477504001896
|
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