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J. Semicond. > 2017, Volume 38?>?Issue 5?> 053005

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SEMICONDUCTOR MATERIALS

The TCR of Ni_24.9Cr_72.5Si_2.6 thin films deposited by DC and RF magnetronsputtering

Bing Cheng, Yijun Yin, Jianqiang Han and Jie Zhang

+ Author Affiliations + Find other works by these authors

• The College of Mechanical & Electrical Engineering, China Jiliang University, Hangzhou 310018, ChinaThe College of Mechanical & Electrical Engineering, China Jiliang University, Hangzhou 310018, China

• Bing Cheng
• Yijun Yin
• Jianqiang Han
• Jie Zhang

 Corresponding author: Jianqiang Han, Email: hjqsmx@163.com

DOI: 10.1088/1674-4926/38/5/053005

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Abstract: The temperature coefficient of resistance (abbreviated as TCR) of thin film resistors on some sensor chips, such as thermal converters, should be less than several ppm/℃.However, the TCR of reported thin films is larger than 5 ppm/℃.In this paper, Ni_24.9Cr_72.5Si_2.6 films are deposited on silicon dioxide film by DC and RF magnetron sputtering.Then as-deposited films are annealed at 450℃ under different durations in N₂ atmosphere. The sheet resistance of thin films with various thickness and annealing time are measured by the four probe resistivity test system at temperature of 20, 50, 100, 150, and 200℃ and then the TCR of thin films are calculated. Experimental results show that the film with the TCR of only-0.86 ppm/℃ can be achieved by RF magnetron sputtering and appropriate annealing conditions.

Key words: magnetron sputtering, NiCrSi thin film, sheet resistance, temperature coefficient of resistance, thermal converter

References

[1]	Van den Broek J J, Donkers J J T M, van der Rijt R A F, et al.Metal film precision resistors: resistive metal films and a new resistor concept. Philips J Res, 1998, 51: 429 doi: 10.1016/S0165-5817(98)00013-8
[2]	Vinayak S, Vyas H P, Muraleedharan K, et al. Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits. Thin Solid Films, 2006, 514: 52 doi: 10.1016/j.tsf.2006.02.025
[3]	Vinayak S, Vyas H P, Vankar V D. Microstructure and electrical characteristics of Ni-Cr thin films. Thin Solid Films, 2007, 515: 136 http://www.sciencedirect.com/science/article/pii/S0040609007003197
[4]	Schippel E. The influence of silicon on properties of deposited Ni-Cr films. Thin Solid Films, 1986, 144: 21 doi: 10.1016/0040-6090(86)90066-0
[5]	Gawalek W. Resistance temperature coefficient of resistance and long-term stability of annealed thin Ni-Cr-Si films. Thin Solid Films, 1984, 116: 205 doi: 10.1016/0040-6090(84)90430-9
[6]	Lee B J, Park G B, Kim J I, et al. The effect of the process parameters on the electrical properties of Ni-Cr-Si alloy thin resistor films. Annual Report Conference on Electrical Insulation and Dielectric Phenomena, 2002: 72 https://www.researchgate.net/publication/3976899_The_effect_of_the_process_parameters_on_the_electrical_properties_of_Ni-Cr-Si_alloy_thin_resistor_films
[7]	Zhang Y Q, Dong X P D, Wu J S. Microstructure and electrical characteristics of Cr-Si-Ni films deposited on glass and Si (100) substrates by RF magnetron sputtering. Mater Sci Eng B, 2004, 113: 154 doi: 10.1016/S0921-5107(04)00402-7
[8]	Chiang C S, Lee W H, Jap F. Investigation into microstructural and electrical characteristics of Ni-Cr-Si thin-film resistors deposited in Al2O3 substrate using DC and RF magnetron sputtering. International Symposium on Next-Generation Electronics (ISNE), 2004: 1
[9]	Cheng H Y, Chen Y C, Li P J, et al. Effect of annealing process on the properties of Ni (55%) Cr (40%) Si (5%) thin-film resistors. Materials, 2015, 8: 6752 doi: 10.3390/ma8105338
[10]	Klonz M, Laiz H, Kessler E. Development of thin-film multijunction thermal converters at PTB/IPHT. IEEE Trans Instrum Meas, 2001, 50: 1490 doi: 10.1109/19.982933
[11]	Yasutaka A, Hiroyuki F, Koji S, et al. Low-frequency characteristics of a thin-film multijunction thermal converter under vacuum. CPEM Digest (Conference on Precision Electromagnetic Measurements), 2014: 50
[12]	Yasutaka A, Hiroyuki F, Koji S, et al. Improvements in the lowfrequency characteristic and sensitivity of a thin-film multijunction thermal converter in vacuum. IEEE Trans Instrum Meas, 2015, 64: 1570 doi: 10.1109/TIM.2014.2385133
[13]	Hiroyuki F. Development of thin-film multijunction thermal converters with a novel structure. IEEE Trans Instrum Meas, 2011, 60: 2725 doi: 10.1109/TIM.2010.2103412
[14]	Zhaohui Q, Dieter M. Comparison of radio-frequency and directcurrent magnetron sputtered thin In2O3:Sn films. Thin Solid Films, 2005, 484: 146 doi: 10.1016/j.tsf.2005.02.006

Fig. 1.  The thickness of deposited Ni_24.9Cr_72.5Si_2.6 thin films as a function of deposition time.

DownLoad: Full-Size Img PowerPoint

Fig. 2.  The sheet resistance as a function of film's thickness (a) before and (b) after annealing.

DownLoad: Full-Size Img PowerPoint

Fig. 3.  The sheet resistance before and after annealing as a function of film's thickness deposited by (a) DC and (b) RF magnetron sputtering.

DownLoad: Full-Size Img PowerPoint

Fig. 4.  The dependence of the sheet resistance on temperature before and after annealing. (a) Film of 126.2 nm deposited by DC magnetron sputtering. (b) Film of 66.9 nm deposited by RF magnetron sputtering.

DownLoad: Full-Size Img PowerPoint

Fig. 5.  The temperature coefficient of resistance as a function of film's thickness before annealing, after 30 min annealing and 60 min annealing, respectively. (a) DC magnetron sputtering. (b) RF magnetron sputtering.

DownLoad: Full-Size Img PowerPoint

Table 1.   Sheet resistance and TCR of Ni_24.9Cr_72.5Si_2.6 films deposited by DC/RF magnetron sputtering.

[1]	Van den Broek J J, Donkers J J T M, van der Rijt R A F, et al.Metal film precision resistors: resistive metal films and a new resistor concept. Philips J Res, 1998, 51: 429 doi: 10.1016/S0165-5817(98)00013-8
[2]	Vinayak S, Vyas H P, Muraleedharan K, et al. Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits. Thin Solid Films, 2006, 514: 52 doi: 10.1016/j.tsf.2006.02.025
[3]	Vinayak S, Vyas H P, Vankar V D. Microstructure and electrical characteristics of Ni-Cr thin films. Thin Solid Films, 2007, 515: 136 http://www.sciencedirect.com/science/article/pii/S0040609007003197
[4]	Schippel E. The influence of silicon on properties of deposited Ni-Cr films. Thin Solid Films, 1986, 144: 21 doi: 10.1016/0040-6090(86)90066-0
[5]	Gawalek W. Resistance temperature coefficient of resistance and long-term stability of annealed thin Ni-Cr-Si films. Thin Solid Films, 1984, 116: 205 doi: 10.1016/0040-6090(84)90430-9
[6]	Lee B J, Park G B, Kim J I, et al. The effect of the process parameters on the electrical properties of Ni-Cr-Si alloy thin resistor films. Annual Report Conference on Electrical Insulation and Dielectric Phenomena, 2002: 72 https://www.researchgate.net/publication/3976899_The_effect_of_the_process_parameters_on_the_electrical_properties_of_Ni-Cr-Si_alloy_thin_resistor_films
[7]	Zhang Y Q, Dong X P D, Wu J S. Microstructure and electrical characteristics of Cr-Si-Ni films deposited on glass and Si (100) substrates by RF magnetron sputtering. Mater Sci Eng B, 2004, 113: 154 doi: 10.1016/S0921-5107(04)00402-7
[8]	Chiang C S, Lee W H, Jap F. Investigation into microstructural and electrical characteristics of Ni-Cr-Si thin-film resistors deposited in Al2O3 substrate using DC and RF magnetron sputtering. International Symposium on Next-Generation Electronics (ISNE), 2004: 1
[9]	Cheng H Y, Chen Y C, Li P J, et al. Effect of annealing process on the properties of Ni (55%) Cr (40%) Si (5%) thin-film resistors. Materials, 2015, 8: 6752 doi: 10.3390/ma8105338
[10]	Klonz M, Laiz H, Kessler E. Development of thin-film multijunction thermal converters at PTB/IPHT. IEEE Trans Instrum Meas, 2001, 50: 1490 doi: 10.1109/19.982933
[11]	Yasutaka A, Hiroyuki F, Koji S, et al. Low-frequency characteristics of a thin-film multijunction thermal converter under vacuum. CPEM Digest (Conference on Precision Electromagnetic Measurements), 2014: 50
[12]	Yasutaka A, Hiroyuki F, Koji S, et al. Improvements in the lowfrequency characteristic and sensitivity of a thin-film multijunction thermal converter in vacuum. IEEE Trans Instrum Meas, 2015, 64: 1570 doi: 10.1109/TIM.2014.2385133
[13]	Hiroyuki F. Development of thin-film multijunction thermal converters with a novel structure. IEEE Trans Instrum Meas, 2011, 60: 2725 doi: 10.1109/TIM.2010.2103412
[14]	Zhaohui Q, Dieter M. Comparison of radio-frequency and directcurrent magnetron sputtered thin In2O3:Sn films. Thin Solid Films, 2005, 484: 146 doi: 10.1016/j.tsf.2005.02.006

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Received: 20 September 2016 Revised: 14 November 2016 Online: Published: 01 May 2017

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Article Navigation >  Journal of Semiconductors  > 2017  >  38(5): 053005

Bing Cheng, Yijun Yin, Jianqiang Han, Jie Zhang. The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetronsputtering[J]. Journal of Semiconductors, 2017, 38(5): 053005. doi: 10.1088/1674-4926/38/5/053005 ****B Cheng, Y J Yin, J Q Han, J Zhang. The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetronsputtering[J]. J. Semicond., 2017, 38(5): 053005. doi: 10.1088/1674-4926/38/5/053005.

Citation:

Bing Cheng, Yijun Yin, Jianqiang Han, Jie Zhang. The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetronsputtering[J]. Journal of Semiconductors, 2017, 38(5): 053005. doi: 10.1088/1674-4926/38/5/053005 **** B Cheng, Y J Yin, J Q Han, J Zhang. The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetronsputtering[J]. J. Semicond., 2017, 38(5): 053005. doi: 10.1088/1674-4926/38/5/053005.

Bing Cheng, Yijun Yin, Jianqiang Han, Jie Zhang. The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetronsputtering[J]. Journal of Semiconductors, 2017, 38(5): 053005. doi: 10.1088/1674-4926/38/5/053005 ****B Cheng, Y J Yin, J Q Han, J Zhang. The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetronsputtering[J]. J. Semicond., 2017, 38(5): 053005. doi: 10.1088/1674-4926/38/5/053005.

Citation:

Bing Cheng, Yijun Yin, Jianqiang Han, Jie Zhang. The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetronsputtering[J]. Journal of Semiconductors, 2017, 38(5): 053005. doi: 10.1088/1674-4926/38/5/053005 **** B Cheng, Y J Yin, J Q Han, J Zhang. The TCR of Ni24.9Cr72.5Si2.6 thin films deposited by DC and RF magnetronsputtering[J]. J. Semicond., 2017, 38(5): 053005. doi: 10.1088/1674-4926/38/5/053005.

PDF( 383 KB)

The TCR of Ni_24.9Cr_72.5Si_2.6 thin films deposited by DC and RF magnetronsputtering

DOI: 10.1088/1674-4926/38/5/053005

• Bing Cheng, 
• Yijun Yin, 
• Jianqiang Han , 
• Jie Zhang

• The College of Mechanical & Electrical Engineering, China Jiliang University, Hangzhou 310018, China

Funds:

the National Natural Science Foundation of China 51377025

Project supported by the National Natural Science Foundation of China (Nos. 51377025, 61376114)

the National Natural Science Foundation of China 61376114

More Information

• Corresponding author: Jianqiang Han, Email: hjqsmx@163.com
• Received Date: 2016-09-20
  
• Revised Date: 2016-11-14
• Published Date: 2017-05-01

Abstract

• Abstract

  The temperature coefficient of resistance (abbreviated as TCR) of thin film resistors on some sensor chips, such as thermal converters, should be less than several ppm/℃.However, the TCR of reported thin films is larger than 5 ppm/℃.In this paper, Ni_24.9Cr_72.5Si_2.6 films are deposited on silicon dioxide film by DC and RF magnetron sputtering.Then as-deposited films are annealed at 450℃ under different durations in N₂ atmosphere. The sheet resistance of thin films with various thickness and annealing time are measured by the four probe resistivity test system at temperature of 20, 50, 100, 150, and 200℃ and then the TCR of thin films are calculated. Experimental results show that the film with the TCR of only-0.86 ppm/℃ can be achieved by RF magnetron sputtering and appropriate annealing conditions.

   

  Keywords:
  • magnetron sputtering, 
  • NiCrSi thin film, 
  • sheet resistance, 
  • temperature coefficient of resistance, 
  • thermal converter
FullText(HTML)
References(14)

• References

  [1]	Van den Broek J J, Donkers J J T M, van der Rijt R A F, et al.Metal film precision resistors: resistive metal films and a new resistor concept. Philips J Res, 1998, 51: 429 doi: 10.1016/S0165-5817(98)00013-8
  [2]	Vinayak S, Vyas H P, Muraleedharan K, et al. Ni-Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits. Thin Solid Films, 2006, 514: 52 doi: 10.1016/j.tsf.2006.02.025
  [3]	Vinayak S, Vyas H P, Vankar V D. Microstructure and electrical characteristics of Ni-Cr thin films. Thin Solid Films, 2007, 515: 136 http://www.sciencedirect.com/science/article/pii/S0040609007003197
  [4]	Schippel E. The influence of silicon on properties of deposited Ni-Cr films. Thin Solid Films, 1986, 144: 21 doi: 10.1016/0040-6090(86)90066-0
  [5]	Gawalek W. Resistance temperature coefficient of resistance and long-term stability of annealed thin Ni-Cr-Si films. Thin Solid Films, 1984, 116: 205 doi: 10.1016/0040-6090(84)90430-9
  [6]	Lee B J, Park G B, Kim J I, et al. The effect of the process parameters on the electrical properties of Ni-Cr-Si alloy thin resistor films. Annual Report Conference on Electrical Insulation and Dielectric Phenomena, 2002: 72 https://www.researchgate.net/publication/3976899_The_effect_of_the_process_parameters_on_the_electrical_properties_of_Ni-Cr-Si_alloy_thin_resistor_films
  [7]	Zhang Y Q, Dong X P D, Wu J S. Microstructure and electrical characteristics of Cr-Si-Ni films deposited on glass and Si (100) substrates by RF magnetron sputtering. Mater Sci Eng B, 2004, 113: 154 doi: 10.1016/S0921-5107(04)00402-7
  [8]	Chiang C S, Lee W H, Jap F. Investigation into microstructural and electrical characteristics of Ni-Cr-Si thin-film resistors deposited in Al2O3 substrate using DC and RF magnetron sputtering. International Symposium on Next-Generation Electronics (ISNE), 2004: 1
  [9]	Cheng H Y, Chen Y C, Li P J, et al. Effect of annealing process on the properties of Ni (55%) Cr (40%) Si (5%) thin-film resistors. Materials, 2015, 8: 6752 doi: 10.3390/ma8105338
  [10]	Klonz M, Laiz H, Kessler E. Development of thin-film multijunction thermal converters at PTB/IPHT. IEEE Trans Instrum Meas, 2001, 50: 1490 doi: 10.1109/19.982933
  [11]	Yasutaka A, Hiroyuki F, Koji S, et al. Low-frequency characteristics of a thin-film multijunction thermal converter under vacuum. CPEM Digest (Conference on Precision Electromagnetic Measurements), 2014: 50
  [12]	Yasutaka A, Hiroyuki F, Koji S, et al. Improvements in the lowfrequency characteristic and sensitivity of a thin-film multijunction thermal converter in vacuum. IEEE Trans Instrum Meas, 2015, 64: 1570 doi: 10.1109/TIM.2014.2385133
  [13]	Hiroyuki F. Development of thin-film multijunction thermal converters with a novel structure. IEEE Trans Instrum Meas, 2011, 60: 2725 doi: 10.1109/TIM.2010.2103412
  [14]	Zhaohui Q, Dieter M. Comparison of radio-frequency and directcurrent magnetron sputtered thin In2O3:Sn films. Thin Solid Films, 2005, 484: 146 doi: 10.1016/j.tsf.2005.02.006

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• Fig. 1. The thickness of deposited Ni_24.9Cr_72.5Si_2.6 thin films as a function of deposition time.
• Fig. 2. The sheet resistance as a function of film's thickness (a) before and (b) after annealing.
• Fig. 3. The sheet resistance before and after annealing as a function of film's thickness deposited by (a) DC and (b) RF magnetron sputtering.
• Fig. 4. The dependence of the sheet resistance on temperature before and after annealing. (a) Film of 126.2 nm deposited by DC magnetron sputtering. (b) Film of 66.9 nm deposited by RF magnetron sputtering.
• Fig. 5. The temperature coefficient of resistance as a function of film's thickness before annealing, after 30 min annealing and 60 min annealing, respectively. (a) DC magnetron sputtering. (b) RF magnetron sputtering.