Fig. 1.
Schematic structure of MOCVD grown GaInP solar cell.
SEMICONDUCTOR DEVICES
Hongbo Lu, Xinyi Li, Wei Zhang, Dayong Zhou, Lijie Sun and Kaijian Chen
Corresponding author: Lu Hongbo, Email: lhb2139@163.com
Abstract: GaInP and AlGaInP solar cells were grown by metal organic chemical vapor deposition (MOCVD), and theoretical analysis demonstrated that hetero-interface recombination velocity plays an important role in the optimizing of cell performance, especially the interface between base layer and back surface field (BSF). Measurements including lattice-matched growth and pseudo-BSF were taken to optimize BSF design. Significant improvement of Voc in GaInP and AlGaInP solar cells imply that the measures we took are effective and promising for performance improvement in the next generation high efficiency solar cells.
Key words: back surface field, GaInP solar cells, MOCVD
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?Chiu P T, Law D C, Singer S B, et al. High performance 5J and 6J direct bonded (SBT) space solar cells. IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, 35: 363 http://cn.bing.com/academic/profile?id=2208443044&encoded=0&v=paper_preview&mkt=zh-cn
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Yang Y, Tu J, Li L, et al. Simulation and discuss of optical match for triple-junction GaAs tandem solar cell. Journal of Yunnan Normal University, 2010, 254: 61 http://en.cnki.com.cn/Article_en/CJFDTOTAL-YNSK201005008.htm
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| [3] |
Lu Hongbo, Li Xinyi, Zhang Wei, et al. A 2.05 eV AlGaInP sub-cell used in next generation solar cells. Journal of Semiconductors, 2014, 35(9): 094010 doi: 10.1088/1674-4926/35/9/094010
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Almansouri I, Bremner S, Ho-Baillie A, et al. The design of single-junction GaAs and dual-junction GaAs/Si in the presence of threading dislocation density. IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, 136: 029 http://cn.bing.com/academic/profile?id=2212594373&encoded=0&v=paper_preview&mkt=zh-cn
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| [5] |
Gregory B L. Minority carrier recombination in neutron irradiated silicon. IEEE Trans Nucl Sci, 1969, 56: 69 http://cn.bing.com/academic/profile?id=2088475119&encoded=0&v=paper_preview&mkt=zh-cn
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| [6] |
Friedman D J, Kurtz S R. Back surface fields for GaInP2 solar cell. IEEE Photovoltaic Specialists Conference, 1991, 01: 358
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| [7] |
Kurtz S R, Olson J M, Friedman D J. Effect of front-surface doping on back-surface passivation in Ga0.5In0.5P cells. IEEE Photovoltaic Specialists Conference, 1997, 132: 819 http://cn.bing.com/academic/profile?id=2156265598&encoded=0&v=paper_preview&mkt=zh-cn
|
| [8] |
King R R, Sinton R A, Swanson R M. Front and back surface fields for point-contact solar cells. IEEE Photovoltaic Specialists Conference, 1988, 98: 538 http://cn.bing.com/academic/profile?id=2115028629&encoded=0&v=paper_preview&mkt=zh-cn
|
| [1] |
?Chiu P T, Law D C, Singer S B, et al. High performance 5J and 6J direct bonded (SBT) space solar cells. IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, 35: 363 http://cn.bing.com/academic/profile?id=2208443044&encoded=0&v=paper_preview&mkt=zh-cn
|
| [2] |
Yang Y, Tu J, Li L, et al. Simulation and discuss of optical match for triple-junction GaAs tandem solar cell. Journal of Yunnan Normal University, 2010, 254: 61 http://en.cnki.com.cn/Article_en/CJFDTOTAL-YNSK201005008.htm
|
| [3] |
Lu Hongbo, Li Xinyi, Zhang Wei, et al. A 2.05 eV AlGaInP sub-cell used in next generation solar cells. Journal of Semiconductors, 2014, 35(9): 094010 doi: 10.1088/1674-4926/35/9/094010
|
| [4] |
Almansouri I, Bremner S, Ho-Baillie A, et al. The design of single-junction GaAs and dual-junction GaAs/Si in the presence of threading dislocation density. IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, 136: 029 http://cn.bing.com/academic/profile?id=2212594373&encoded=0&v=paper_preview&mkt=zh-cn
|
| [5] |
Gregory B L. Minority carrier recombination in neutron irradiated silicon. IEEE Trans Nucl Sci, 1969, 56: 69 http://cn.bing.com/academic/profile?id=2088475119&encoded=0&v=paper_preview&mkt=zh-cn
|
| [6] |
Friedman D J, Kurtz S R. Back surface fields for GaInP2 solar cell. IEEE Photovoltaic Specialists Conference, 1991, 01: 358
|
| [7] |
Kurtz S R, Olson J M, Friedman D J. Effect of front-surface doping on back-surface passivation in Ga0.5In0.5P cells. IEEE Photovoltaic Specialists Conference, 1997, 132: 819 http://cn.bing.com/academic/profile?id=2156265598&encoded=0&v=paper_preview&mkt=zh-cn
|
| [8] |
King R R, Sinton R A, Swanson R M. Front and back surface fields for point-contact solar cells. IEEE Photovoltaic Specialists Conference, 1988, 98: 538 http://cn.bing.com/academic/profile?id=2115028629&encoded=0&v=paper_preview&mkt=zh-cn
|
Article views: 3906 Times PDF downloads: 25 Times Cited by: 0 Times
Received: 27 December 2015 Revised: 17 March 2016 Online: Published: 01 October 2016
| Citation: |
Hongbo Lu, Xinyi Li, Wei Zhang, Dayong Zhou, Lijie Sun, Kaijian Chen. Optimizing back surface field for improving Voc of(Al)GaInP solar cell[J]. Journal of Semiconductors, 2016, 37(10): 104004. doi: 10.1088/1674-4926/37/10/104004
****
H B Lu, X Y Li, W Zhang, D Y Zhou, L J Sun, K J Chen. Optimizing back surface field for improving Voc of(Al)GaInP solar cell[J]. J. Semicond., 2016, 37(10): 104004. doi: 10.1088/1674-4926/37/10/104004.
|
Project supported by the National Natural Science Foundation of China 61474076
Project supported by the National Natural Science Foundation of China (No. 61474076)
| [1] |
?Chiu P T, Law D C, Singer S B, et al. High performance 5J and 6J direct bonded (SBT) space solar cells. IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, 35: 363 http://cn.bing.com/academic/profile?id=2208443044&encoded=0&v=paper_preview&mkt=zh-cn
|
| [2] |
Yang Y, Tu J, Li L, et al. Simulation and discuss of optical match for triple-junction GaAs tandem solar cell. Journal of Yunnan Normal University, 2010, 254: 61 http://en.cnki.com.cn/Article_en/CJFDTOTAL-YNSK201005008.htm
|
| [3] |
Lu Hongbo, Li Xinyi, Zhang Wei, et al. A 2.05 eV AlGaInP sub-cell used in next generation solar cells. Journal of Semiconductors, 2014, 35(9): 094010 doi: 10.1088/1674-4926/35/9/094010
|
| [4] |
Almansouri I, Bremner S, Ho-Baillie A, et al. The design of single-junction GaAs and dual-junction GaAs/Si in the presence of threading dislocation density. IEEE 42nd Photovoltaic Specialist Conference (PVSC), 2015, 136: 029 http://cn.bing.com/academic/profile?id=2212594373&encoded=0&v=paper_preview&mkt=zh-cn
|
| [5] |
Gregory B L. Minority carrier recombination in neutron irradiated silicon. IEEE Trans Nucl Sci, 1969, 56: 69 http://cn.bing.com/academic/profile?id=2088475119&encoded=0&v=paper_preview&mkt=zh-cn
|
| [6] |
Friedman D J, Kurtz S R. Back surface fields for GaInP2 solar cell. IEEE Photovoltaic Specialists Conference, 1991, 01: 358
|
| [7] |
Kurtz S R, Olson J M, Friedman D J. Effect of front-surface doping on back-surface passivation in Ga0.5In0.5P cells. IEEE Photovoltaic Specialists Conference, 1997, 132: 819 http://cn.bing.com/academic/profile?id=2156265598&encoded=0&v=paper_preview&mkt=zh-cn
|
| [8] |
King R R, Sinton R A, Swanson R M. Front and back surface fields for point-contact solar cells. IEEE Photovoltaic Specialists Conference, 1988, 98: 538 http://cn.bing.com/academic/profile?id=2115028629&encoded=0&v=paper_preview&mkt=zh-cn
|
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