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J. Semicond. > 2015, Volume 36?>?Issue 12?> 121001

INVITED REVIEW PAPERS

Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

Hongda Chen1, , Zan Zhang1, Beiju Huang1, Luhong Mao2 and Zanyun Zhang3

+ Author Affiliations

 Corresponding author: Hongda Chen, Email: hdchen@semi.ac.cn

DOI: 10.1088/1674-4926/36/12/121001

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Abstract: Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits(OEICs) based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.

Key words: silicon photonics, silicon LED, grating coupler, silicon modulator, optoelectronic integrated circuits



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Fig. 1.  (Color online) Demonstrated low-voltage Si-LED. (a) Cross-sectional view. (b) Microphotograph of the device. (c) Spectra with increasing current. See Reference [24].

Fig. 2.  (a) Cross-sectional view of the three-terminal Si-LED. (b) Electroluminescence spectra of the device in forward bias mode. (c) Gate modulation effect on the output light intensity in the forward mode. See Reference [25].

Fig. 3.  (Color online) (a) Cross-sectional view of proposed SBD LED. (b) Optical micrograph of visible light emitting from SBD. (c) Electroluminescence emission spectra from SBD. See Reference [26].

Fig. 4.  (Color online) Micrograph of silicon LED display array displaying characters dynamically.

Fig. 5.  (Color online) (a) 3D schematic of the proposed bidirectional grating coupler. (b) Scanning electron microscope (SEM) image of the grating region covered with silicon dioxide cladding. (c) Microscope photo of the fabricated device. (d) Electric intensity distribution of the fiber incidence coupling at the peak coupling wavelength of 1557 nm. (e) Comparison between the simulated and measured coupling efficiency of the bidirectional grating coupler. See Reference [32].

Fig. 6.  (Color online) Microscope photo of (a) the bidirectional grating-based optical modulator,(b) tip coupler,(c) TiN terminator,(d) multi-mode inferometer combiner and (e) bidirectional grating interface. See Reference [46].

Fig. 7.  (Color online) (a) Calculated normalized optical transmission of the modulator with different fiber positions. (b) Measured fiber to fiber normalized optical transmission of the modulator with different fiber positions. See Reference [46].

Fig. 8.  (Color online) Eye diagrams for fiber positions (a)-(e) varying in the $x$-direction with an unchanged $y$-coordinate of 0. (f)-(j) are varying in the $y$-direction with an unchanged $x$-coordinate of 0. See Reference [46].

Fig. 9.  (Color online) Various types of germanium waveguide photodetectors. (a) Vertical coupling with lateral p-i-n configuration. (b) Butt coupling with lateral p-i-n configuration. (c) Vertical coupling with vertical p-i-n configuration. See Reference [50].

Fig. 10.  (Color online) (a) Schematic layout of the germanium waveguide photodetector. (b) Cross-sectional view of the detector waveguide configuration. See Reference [59].

Fig. 11.  Characteristics of the WGPD. (a) $I$-$V$ curve of the WGPD. (b) Responsivity of the WGPD under different reverse bias voltages. See Reference [59].

Fig. 12.  (Color online) Micrographs of fabricated monolithically integrated transceiver chip. See Reference [53].

Fig. 13.  (Color online) Microphotograph of a CMOS die showing monolithically integrated CMOS and nanophotonics circuitry. (a) Optical image of transmitter (TX) consisting of CMOS driver circuitry integrated with a ring modulator. (b) Optical image of the receiver (RX) consisting of CMOS amplifiers integrated with a Ge waveguide photodetector. See Reference [55].

Fig. 14.  (Color online) (a) Schematic layout of the integrated photonic interconnect. (b) Cross-section diagram of the photonic components. See Reference [59].

Fig. 15.  (Color online) (a) Microscope photo of the integrated photonic interconnect. (b) SEM top images of the integrated germanium waveguide photodetector. (c) Top view of the optical interface. (d) The gratings with silicon dioxide cladding layer. (e) The cross-sectional view of the phase shifter with ground-signal-ground electrode pattern. (f) Zoomed cross-sectional view of the rib waveguide embedded in the phase shifter. See Reference [59].

Fig. 16.  The cross-section of optoelectronic ICs. See Reference [63].

Fig. 17.  (Color online) Microphotograph of OEIC for on-chip interconnect. See Reference [63].

Fig. 18.  Top view of die to wafer assembly of electronic IC over photonic IC. See Reference [65].

Fig. 19.  (Color online) Si-photonics and CMOS chip pictures. (a) 130 nm SOI silicon photonic transceiver chip. (b) CMOS 40 nm low-power transceiver chip. (c) Flip-chip integrated optical transceiver demonstrator with attached fiber array,glued and wire-bonded to a PCB. See Reference [66].

Fig. 20.  (Color online) Optical link based on electro-optic polymer and silicon nitride waveguide. See Reference [72].

Fig. 21.  (Color online) Cross-sectional schematic diagram illustrating backend integration of photonic devices and electronic circuits.

Fig. 22.  (Color online) (a) Structure and (b) schematic diagram of the backend monolithic integrated Si$_{3}$N$_{4}$ filter. See Reference [74].

Fig. 23.  (Color online) Microscope photo of the CSMC commercial 1 $\mu $m CMOS IC die (a) before and (b) after photonic layer fabrication. (c),(d) SEM images of the cross-section of CMOS IC die with deposited SiO$_{2}$ and Si$_{3}$N$_{4}$. (e) Normalized response spectra of the Si$_{3}$N$_{4}$ microring filter with different voltage applied on $V_{\rm dd}$ pin. See Reference [74].

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    Received: 11 September 2015 Revised: Online: Published: 01 December 2015

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      Hongda Chen, Zan Zhang, Beiju Huang, Luhong Mao, Zanyun Zhang. Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits[J]. Journal of Semiconductors, 2015, 36(12): 121001. doi: 10.1088/1674-4926/36/12/121001 ****H D Chen, Z Zhang, B J Huang, L H Mao, Z Y Zhang. Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits[J]. J. Semicond., 2015, 36(12): 121001. doi: 10.1088/1674-4926/36/12/121001.
      Citation:
      Hongda Chen, Zan Zhang, Beiju Huang, Luhong Mao, Zanyun Zhang. Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits[J]. Journal of Semiconductors, 2015, 36(12): 121001. doi: 10.1088/1674-4926/36/12/121001 ****
      H D Chen, Z Zhang, B J Huang, L H Mao, Z Y Zhang. Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits[J]. J. Semicond., 2015, 36(12): 121001. doi: 10.1088/1674-4926/36/12/121001.

      Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

      DOI: 10.1088/1674-4926/36/12/121001
      • 1.

        State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • 2.

        Department of Electronics and Information Engineering, Tianjin University, Tianjin 300072, China

      • 3.

        School of Electronics and Information Engineering, Tianjin Polytechnic University, Tianjin 300387, China

      Funds:

      Project supported by the National Basic Research Program of China(No. 2011CBA00608), the National Natural Science Foundation of China(Nos. 61178051, 61321063, 61335010, 61178048, 61275169), and the National High Technology Research and Development Program of China(Nos. 2013AA013602, 2013AA031903, 2013AA032204).

      More Information
      • Corresponding author: Email: hdchen@semi.ac.cn
      • Received Date: 2015-09-11
      • Published Date: 2015-01-25

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