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J. Semicond. > 2025, Volume 46?>?Issue 9?> 090501

SHORT COMMUNICATION

Room-temperature electrically injected GaN-based photonic-crystal surface-emitting lasers

Tong Xu1, 2, 3, Meixin Feng1, , Xiujian Sun1, Rui Xi1, Xinchao Li1, Shuming Zhang1, Qian Sun1, , Xiaoqi Yu2, Kanglin Xiong2, Hui Yang1, 2, Xianfei Zhang3, Zhuangpeng Guo3 and Peng Chen3

+ Author Affiliations

 Corresponding author: Meixin Feng, mxfeng2011@sinano.ac.cn; Qian Sun, qsun2011@sinano.ac.cn

DOI: 10.1088/1674-4926/25070031CSTR: 32376.14.1674-4926.25070031

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[1]
Hirose K, Liang Y, Kurosaka Y, et al. Watt-class high-power, high-beam-quality photonic-crystal lasers. Nat Photonics, 2014, 8, 406 doi: 10.1038/nphoton.2014.75
[2]
Inoue T, Yoshida M, Gelleta J, et al. General recipe to realize photonic-crystal surface-emitting lasers with 100-W-to-1-kW single-mode operation. Nat Commun, 2022, 13, 3262 doi: 10.1038/s41467-022-30910-7
[3]
Noda S, Yoshida M, Inoue T, et al. Photonic-crystal surface-emitting lasers. Nat Rev Electr Eng, 2024, 1, 802 doi: 10.1038/s44287-024-00113-x
[4]
Yoshida M, Katsuno S, Inoue T, et al. High-brightness scalable continuous-wave single-mode photonic-crystal laser. Nature, 2023, 618(7966), 727 doi: 10.1038/s41586-023-06059-8
[5]
Wang H Z, Kawahito Y, Yoshida R, et al. Development of a high-power blue laser (445 nm) for material processing. Opt Lett, 2017, 42(12), 2251 doi: 10.1364/OL.42.002251
[6]
Nakatsu Y, Nagao Y, Hirao T, et al. Blue and green InGaN semiconductor lasers as light sources for displays. Gallium Nitride Materials and Devices XV, 2020, 11280, 81 doi: 10.1117/12.2541710
[7]
Linden K J. Low-cost 420nm blue laser diode for tissue cutting and hemostasis. Optical Interactions with Tissue and Cells XXVII, 2016, 9706, 29 doi: 10.1117/12.2208315
[8]
Matsubara H, Yoshimoto S, Saito H, et al. GaN photonic-crystal surface-emitting laser at blue-violet wavelengths. Science, 2008, 319(5862), 445 doi: 10.1126/science.1150413
[9]
Kawashima S, Kawashima T, Nagatomo Y, et al. GaN-based surface-emitting laser with two-dimensional photonic crystal acting as distributed-feedback grating and optical cladding. Appl Phys Lett, 2010, 97(25), 251112 doi: 10.1063/1.3528352
[10]
Emoto K, Koizumi T, Hirose M, et al. Wide-bandgap GaN-based watt-class photonic-crystal lasers. Commun Mater, 2022, 3, 72 doi: 10.1038/s43246-022-00288-6
[11]
Liang Y, Peng C, Sakai K, et al. Three-dimensional coupled-wave model for square-lattice photonic crystal lasers with transverse electric polarization: A general approach. Phys Rev B, 2011, 84(19), 195119 doi: 10.1103/PhysRevB.84.195119
[12]
Coldren L A, Corzine S W, Ma?anovi? M L. Diode Lasers and Photonic Integrated Circuits. Wiley, 2012 doi: 10.1002/9781118148167
Fig. 1.  (Color online) Schematic diagram of the regrowth-free GaN-PCSELs.

Fig. 2.  (Color online) Calculation results of (a) the internal losses, PC losses, optical confinement factors in the MQWs and PC layer, (b) the total losses and threshold material gain variation with the p-GaN thickness.

Fig. 3.  The (a) top-view and (b) cross-sectional SEM images of the PC structure.

Fig. 4.  (Color online) (a) Normalized EL spectra, (b) L?I?V curve, and (c) FFP (24.6 A) of the as-fabricated GaN-based PCSEL.

[1]
Hirose K, Liang Y, Kurosaka Y, et al. Watt-class high-power, high-beam-quality photonic-crystal lasers. Nat Photonics, 2014, 8, 406 doi: 10.1038/nphoton.2014.75
[2]
Inoue T, Yoshida M, Gelleta J, et al. General recipe to realize photonic-crystal surface-emitting lasers with 100-W-to-1-kW single-mode operation. Nat Commun, 2022, 13, 3262 doi: 10.1038/s41467-022-30910-7
[3]
Noda S, Yoshida M, Inoue T, et al. Photonic-crystal surface-emitting lasers. Nat Rev Electr Eng, 2024, 1, 802 doi: 10.1038/s44287-024-00113-x
[4]
Yoshida M, Katsuno S, Inoue T, et al. High-brightness scalable continuous-wave single-mode photonic-crystal laser. Nature, 2023, 618(7966), 727 doi: 10.1038/s41586-023-06059-8
[5]
Wang H Z, Kawahito Y, Yoshida R, et al. Development of a high-power blue laser (445 nm) for material processing. Opt Lett, 2017, 42(12), 2251 doi: 10.1364/OL.42.002251
[6]
Nakatsu Y, Nagao Y, Hirao T, et al. Blue and green InGaN semiconductor lasers as light sources for displays. Gallium Nitride Materials and Devices XV, 2020, 11280, 81 doi: 10.1117/12.2541710
[7]
Linden K J. Low-cost 420nm blue laser diode for tissue cutting and hemostasis. Optical Interactions with Tissue and Cells XXVII, 2016, 9706, 29 doi: 10.1117/12.2208315
[8]
Matsubara H, Yoshimoto S, Saito H, et al. GaN photonic-crystal surface-emitting laser at blue-violet wavelengths. Science, 2008, 319(5862), 445 doi: 10.1126/science.1150413
[9]
Kawashima S, Kawashima T, Nagatomo Y, et al. GaN-based surface-emitting laser with two-dimensional photonic crystal acting as distributed-feedback grating and optical cladding. Appl Phys Lett, 2010, 97(25), 251112 doi: 10.1063/1.3528352
[10]
Emoto K, Koizumi T, Hirose M, et al. Wide-bandgap GaN-based watt-class photonic-crystal lasers. Commun Mater, 2022, 3, 72 doi: 10.1038/s43246-022-00288-6
[11]
Liang Y, Peng C, Sakai K, et al. Three-dimensional coupled-wave model for square-lattice photonic crystal lasers with transverse electric polarization: A general approach. Phys Rev B, 2011, 84(19), 195119 doi: 10.1103/PhysRevB.84.195119
[12]
Coldren L A, Corzine S W, Ma?anovi? M L. Diode Lasers and Photonic Integrated Circuits. Wiley, 2012 doi: 10.1002/9781118148167

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    Received: 22 July 2025 Revised: 28 July 2025 Online: Accepted Manuscript: 12 August 2025Uncorrected proof: 12 August 2025Published: 15 September 2025

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      Tong Xu, Meixin Feng, Xiujian Sun, Rui Xi, Xinchao Li, Shuming Zhang, Qian Sun, Xiaoqi Yu, Kanglin Xiong, Hui Yang, Xianfei Zhang, Zhuangpeng Guo, Peng Chen. Room-temperature electrically injected GaN-based photonic-crystal surface-emitting lasers[J]. Journal of Semiconductors, 2025, 46(9): 090501. doi: 10.1088/1674-4926/25070031 ****T Xu, M X Feng, X J Sun, R Xi, X C Li, S M Zhang, Q Sun, X Q Yu, K L Xiong, H Yang, X F Zhang, Z P Guo, and P Chen, Room-temperature electrically injected GaN-based photonic-crystal surface-emitting lasers[J]. J. Semicond., 2025, 46(9), 090501 doi: 10.1088/1674-4926/25070031
      Citation:
      Tong Xu, Meixin Feng, Xiujian Sun, Rui Xi, Xinchao Li, Shuming Zhang, Qian Sun, Xiaoqi Yu, Kanglin Xiong, Hui Yang, Xianfei Zhang, Zhuangpeng Guo, Peng Chen. Room-temperature electrically injected GaN-based photonic-crystal surface-emitting lasers[J]. Journal of Semiconductors, 2025, 46(9): 090501. doi: 10.1088/1674-4926/25070031 ****
      T Xu, M X Feng, X J Sun, R Xi, X C Li, S M Zhang, Q Sun, X Q Yu, K L Xiong, H Yang, X F Zhang, Z P Guo, and P Chen, Room-temperature electrically injected GaN-based photonic-crystal surface-emitting lasers[J]. J. Semicond., 2025, 46(9), 090501 doi: 10.1088/1674-4926/25070031

      Room-temperature electrically injected GaN-based photonic-crystal surface-emitting lasers

      DOI: 10.1088/1674-4926/25070031
      CSTR: 32376.14.1674-4926.25070031
      • 1.

        Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China

      • 2.

        Suzhou Laboratory, Suzhou 215123, China

      • 3.

        Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

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      • Tong Xu received his B.S. degree from Zhejiang Normal University, Jinhua, China, in 2020. He is currently working toward the Ph.D. degree at School of Electronic Science and Engineering, Nanjing University, Nanjing, China. His current research interests include photonic-crystal surface-emitting lasers
      • Meixin Feng received his Ph.D. degree from the Institute of Semiconductors, Chinese Academy of Sciences (CAS), Beijing, China, in 2014. He is currently a Professor with Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China. His current research interests include Ⅲ-nitride semiconductor materials and devices
      • Qian Sun received his Ph.D. degree from Yale University, New Haven, CT, USA, in 2009. He is currently a Professor with Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China. His current research interests include Ⅲ-nitride semiconductor materials and devices
      • Corresponding author: mxfeng2011@sinano.ac.cn; qsun2011@sinano.ac.cn
      • Received Date: 2025-07-22
      • Revised Date: 2025-07-28
        • Available Online: 2025-08-12

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