Abstract: A self-consistent solution that simultaneously satisfies the Schrodinger equations and Poisson equation is used to calculate the band structure and gain spectra of InGaN/AlInGaN,InGaN/GaN,InGaN/InGaN,and InGaN/AlGaN.It is found that the polarized electrons on the interface of the heterostructure are the main factor limiting the optical gain.The intensity of the spontaneous emission spectrum can be improved if AlInGaN,which can reduce the number of polarized electrons,is used as a barrier.Considering the effect of the polarized electrons and the barrier energy gap,a method is put forward to optimize the proportion of every element in the AlInGaN barrier,and physical explanations are given.

Key words: AlInGaN, polarized field, spontaneous emission spectrum, barrier material