Abstract: The influence of annealing atmosphere on the aluminum-induced crystallization (AIC) of a-Si film has been studied by X-ray diffraction spectroscopy,Raman spectroscopy,and scanning electron microscopy.The films were annealed in different annealing atmospheres,i.e.,H2,N2 and air.The Al and amorphous silicon films were deposited by DC magnetron sputtering on glass substrate.The XRD results indicate that the a-Si film was crystallized to poly-Si when the sample was annealed in H2 at 400℃ for 90min.The results of Raman spectroscopy show that the crystallinity of the samples after annealing in H2 is the maximum and the samples after annealing in air is the lowest under the same conditions,such as annealing temperature (500℃) and annealing time.The experimental results indicate that H2 stimulates the crystallization of a-Si films during high temperature annealing in hydrogen by both breaking the weak bonding of Si-Si and accelerating the overflow rate of O.2 from the a-Si films.

Key words: a-Si film, annealing, crystallization, AIC