Chin. J. Semicond. > 2007, Volume 28?>?Issue 5?> 665-669

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Models and Related Mechanisms of NBTI Degradation of 90nm pMOSFETs

Cao Yanrong, Ma Xiaohua, Hao Yue, Yu Lei, Zhu Zhiwei and Chen Haifeng

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Abstract: We investigate the negative bias temperature instability (NBTI) of 90nm pMOSFETs under various temperatures and stress gate voltages (Vg).We also study models of the time (t),temperature (T),and stress Vg dependence of 90nm pMOSFETs NBTI degradation.The time model and temperature model are similar to previous studies,with small difference in the key coefficients.A power-law model is found to hold for Vg,which is different from the conventional exponential Vg model.The new model is more predictive than the exponential model when taking lower stress Vg into account.

Key words: NBTI,  90nm,  pMOSFETs,  model

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    Received: 18 August 2015 Revised: 20 December 2006 Online: Published: 01 May 2007

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      Cao Yanrong, Ma Xiaohua, Hao Yue, Yu Lei, Zhu Zhiwei, Chen Haifeng. Models and Related Mechanisms of NBTI Degradation of 90nm pMOSFETs[J]. Journal of Semiconductors, 2007, 28(5): 665-669. ****Cao Y R, Ma X H, Hao Y, Yu L, Zhu Z W, Chen H F. Models and Related Mechanisms of NBTI Degradation of 90nm pMOSFETs[J]. Chin. J. Semicond., 2007, 28(5): 665.
      Citation:
      Cao Yanrong, Ma Xiaohua, Hao Yue, Yu Lei, Zhu Zhiwei, Chen Haifeng. Models and Related Mechanisms of NBTI Degradation of 90nm pMOSFETs[J]. Journal of Semiconductors, 2007, 28(5): 665-669. ****
      Cao Y R, Ma X H, Hao Y, Yu L, Zhu Z W, Chen H F. Models and Related Mechanisms of NBTI Degradation of 90nm pMOSFETs[J]. Chin. J. Semicond., 2007, 28(5): 665.

      Models and Related Mechanisms of NBTI Degradation of 90nm pMOSFETs

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-11-16
      • Revised Date: 2006-12-20
      • Published Date: 2007-04-29

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