Chin. J. Semicond. > 2007, Volume 28?>?Issue 11?> 1701-1705

PAPERS

Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC

Wang Chao, Zhang Yimen, Zhang Yuming, Guo Hui, Xu Daqing and Wang Yuehu

+ Author Affiliations

PDF

Abstract: The diffusion behavior of vanadium (V) implanted in SiC is investigated by secondary ion mass spectrometry.Significant redistribution,especially out-diffusion of vanadium towards the sample surface, is not observed after 1650℃ annealing.Higher carrier concentration is obtained due to a lack of compensation of vanadium in the surface region.The electrical characteristics of Ni contacts to V-implanted n-type 4H-SiC are investigated using a linear transmission line method.A specific contact resistance as low as 4.4e-3Ω·cm2 is achieved after annealing at 1050℃ for 10min in gas ambient consisting of 90% N2 and 10% H2.X-ray diffraction analysis shows the formation of Ni2Si and graphite phase at the interface after annealing.This provides the evidence that the carbon vacancies,resulting from the out-diffusion of carbon atoms from SiC,contribute to the formation of ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons.

Key words: ohmic contact, semi-insulating SiC, V ion implantation, diffusion, carbon vacancies

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3769 Times PDF downloads: 1062 Times Cited by: 0 Times

    History

    Received: 18 August 2015 Revised: 04 July 2007 Online: Published: 01 November 2007

    Catalog

      Email This Article

      User name:
      Email:*請輸入正確郵箱
      Code:*驗證碼錯誤
      Wang Chao, Zhang Yimen, Zhang Yuming, Guo Hui, Xu Daqing, Wang Yuehu. Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC[J]. Journal of Semiconductors, 2007, 28(11): 1701-1705. ****Wang C, Zhang Y M, Zhang Y M, Guo H, Xu D Q, Wang Y H. Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC[J]. Chin. J. Semicond., 2007, 28(11): 1701.
      Citation:
      Wang Chao, Zhang Yimen, Zhang Yuming, Guo Hui, Xu Daqing, Wang Yuehu. Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC[J]. Journal of Semiconductors, 2007, 28(11): 1701-1705. ****
      Wang C, Zhang Y M, Zhang Y M, Guo H, Xu D Q, Wang Y H. Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC[J]. Chin. J. Semicond., 2007, 28(11): 1701.

      Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Microelectronics Institute,Xidian University,Xi'an 710071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-05-26
      • Revised Date: 2007-07-04
      • Published Date: 2007-10-24

      Catalog

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return