PAPERS
Zhu Yangjun, Miao Qinghai, Zhang Xinghua, Yang Lieyong and Lu Shuojin
Abstract: A new method for the real-time measurement of junction temperature is introduced.For transistors dissipating power at a constant rate,the heating current is treated as the measuring current in order to measure directly the junction temperature of the transistors.The method can be used in on-line measurements.
Key words: real-time measurement, junction temperature, background data
Article views: 3819 Times PDF downloads: 1528 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 03 February 2007 Online: Published: 01 June 2007
| Citation: |
Zhu Yangjun, Miao Qinghai, Zhang Xinghua, Yang Lieyong, Lu Shuojin. Real-Time and On-Line Measurement of Junction Temperature for Semiconductor Power Devices[J]. Journal of Semiconductors, 2007, 28(6): 980-983.
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Zhu Y J, Miao Q H, Zhang X H, Yang L Y, Lu S J. Real-Time and On-Line Measurement of Junction Temperature for Semiconductor Power Devices[J]. Chin. J. Semicond., 2007, 28(6): 980.
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