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J. Semicond. > 2008, Volume 29?>?Issue 8?> 1445-1448

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An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network

Zeng Xuan, Chen Xiaojuan, Liu Guoguo, Yuan Tingting, Chen Zhongzi, Zhang Hui, Wang Liang, Li Chengzhan, Pang Lei, Liu Xinyu and Liu Jian

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Abstract: 8GHz 20W internally matched AlGaN/GaN HEMTs have been developed.The input and output matching networks are realised with microstrip lines on a 0.381mm thick alumina substrate.To improve the stability factor K of the device,a lossy RC network is used at the input of the device.The developed internally matched power amplifier module exhibits 43dBm (20W) power output with a 7.3dB linear gain,38.1% PAE,and combined power efficiency of 70.6% at 8GHz.

Key words: AlGaN/GaN HEMTs, internally match, power combining, power amplifier

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    Received: 18 August 2015 Revised: 02 April 2008 Online: Published: 01 August 2008

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      Zeng Xuan, Chen Xiaojuan, Liu Guoguo, Yuan Tingting, Chen Zhongzi, Zhang Hui, Wang Liang, Li Chengzhan, Pang Lei, Liu Xinyu, Liu Jian. An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network[J]. Journal of Semiconductors, 2008, 29(8): 1445-1448. ****Zeng X, Chen X J, Liu G G, Yuan T T, Chen Z Z, Zhang H, Wang L, Li C Z, Pang L, Liu X Y, Liu J. An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network[J]. J. Semicond., 2008, 29(8): 1445.
      Citation:
      Zeng Xuan, Chen Xiaojuan, Liu Guoguo, Yuan Tingting, Chen Zhongzi, Zhang Hui, Wang Liang, Li Chengzhan, Pang Lei, Liu Xinyu, Liu Jian. An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network[J]. Journal of Semiconductors, 2008, 29(8): 1445-1448. ****
      Zeng X, Chen X J, Liu G G, Yuan T T, Chen Z Z, Zhang H, Wang L, Li C Z, Pang L, Liu X Y, Liu J. An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network[J]. J. Semicond., 2008, 29(8): 1445.

      An 8GHz Internally Matched AlGaN/GaN HEMT Power Amplifier with RC Stability Network

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-02-28
      • Revised Date: 2008-04-02
      • Published Date: 2008-08-02

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