Abstract: In the active matrix addressing organic light--emitting diode (AM-OLED) display panel,we modify electricity functional layer-layout of the poly-Si thin film transistor (TFT) and prolong the source and drain electrode as the anode of OLED,forming the micro cavity AM-OLED with a certain quality factor (Q).The slight modification of the layout can not only improve the color saturation of the OLED,which is good to display color image,but also omit the process of deposition and photo lithography of OLED's ITO anode.As a result,p+-MIC poly-Si thin film optic functional layer is formed.The thickness of optic functional layer is optimized;and the electricity characteristic of TFT and the optic characteristic of OLED are compared.When the thickness is 40nm,μFE (cm2/(V·s)),Vth(V),S(V/decade),Ion/Ioff(1E7) at |Vds|=-5V,GIDL (pA/μm ) at Vds=-5V and Vg=5V of TFT are very good, and display device (MOLED) with high EL intensity and high saturation performance could be realized.This not only develops the high performance of red MOLED but also greatly results simplification of the preparation process flow.

Key words: p-nc-Si:H thin film, microcavity, poly-Si thin film functional layer