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J. Semicond. > 2008, Volume 29?>?Issue 5?> 988-992

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Design of an Integrated 20W×2 Class-D Audio Power Amplifier in 0.8μm BCD Technology

Liu Lianxi, Zhu Zhangming, Yang Yintang, Guo Wei and Shi Bin

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Abstract: This paper presents a 20W×2 class-D audio power amplifier with high efficiency in a 0.8μm BCDMOS process.The amplifier is capable of driving 2×8Ω loads from a 18V power supply at more than 85% power efficiency,and its maximum output power is more than 20W×2.The circuit detail of the output stage,over-current protection,and rail-to-rail comparator are also presented.Through analysis of the LDMOSFET cross section,the impact of the parasitical effect on the distortion of the output is discussed.Finally,the experimental results of this work are presented.

Key words: class-D power amplifier, full-bridge, over-current protection, rail-to-rail comparator

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    Received: 18 August 2015 Revised: 14 December 2007 Online: Published: 01 May 2008

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      Liu Lianxi, Zhu Zhangming, Yang Yintang, Guo Wei, Shi Bin. Design of an Integrated 20W×2 Class-D Audio Power Amplifier in 0.8μm BCD Technology[J]. Journal of Semiconductors, 2008, 29(5): 988-992. ****Liu L X, Zhu Z M, Yang Y T, Guo W, Shi B. Design of an Integrated 20W×2 Class-D Audio Power Amplifier in 0.8μm BCD Technology[J]. J. Semicond., 2008, 29(5): 988.
      Citation:
      Liu Lianxi, Zhu Zhangming, Yang Yintang, Guo Wei, Shi Bin. Design of an Integrated 20W×2 Class-D Audio Power Amplifier in 0.8μm BCD Technology[J]. Journal of Semiconductors, 2008, 29(5): 988-992. ****
      Liu L X, Zhu Z M, Yang Y T, Guo W, Shi B. Design of an Integrated 20W×2 Class-D Audio Power Amplifier in 0.8μm BCD Technology[J]. J. Semicond., 2008, 29(5): 988.

      Design of an Integrated 20W×2 Class-D Audio Power Amplifier in 0.8μm BCD Technology

      • Microelectronics Institute, Xidian University, Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xi'an 710071,China

      • Microelectronics Institute, Xidian University, Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xi'an 710071,China

      • Microelectronics Institute, Xidian University, Xi'an 710071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-08-03
      • Revised Date: 2007-12-14
      • Published Date: 2008-05-05

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