Abstract: This paper presents a macromodel applied to a high-voltage double diffused drain MOSFET (HV DDDMOSFET) after analyzing the distortion between measured curves and simulated curves obtained by the SPICE BSIM model.The macromodel is composed of regular SPICE devices,such as general nMOSFETs,MESFETs and diodes.The structure of the macromodel is simple.It is convenient to use,and it can describe the I-V characteristics correctly.In order to improve the scalability of the macromodel,the MESFET’s parameter K1 (threshold voltage sensitivity to bulk node) has been optimized.A quasi-empirical expression between K1 and W/L of MOSFET has been obtained,which allows the macromodel to fit devices in different dimensions.The practicality of the model has been improved greatly.This scalable macromodel can be widely used in general EDA tools based on the SPICE model.

Key words: high-voltage double diffused drain MOSFET,  MESFET,  scalable macromodel,  SPICE model