LETTERS
Abstract: A novel capacitive pressure sensor is presented,whose sensing structure is a solid-state capacitor consisting of three square membranes with Al/SiO2/n-type silicon.It was fabricated using pn junction self-stop etching combined with adhesive bonding,and only three masks were used during the process.Sensors with side lengths of 1000,1200,and 1400μm were fabricated,showing sensitivity of 1.8,2.3,and 3.6fF/hPa over the range of 410~1010hPa,respectively.The sensitivity of the sensor with a side length of 1500μm is 4.6fF/hPa,the nonlinearity is 6.4%,and the max hysteresis is 3.6%.The results show that permittivity change plays an important part in the capacitance change.
Key words: capacitive pressure senor, electrostriction, pn junction self-stop etching, adhesive bonding, linearity
Article views: 3454 Times PDF downloads: 1173 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 09 November 2007 Online: Published: 01 March 2008
| Citation: |
Huang Xiaodong, Huang Jianqiu, Qin Ming, Huang Qing’an. A Novel Capacitive Pressure Sensor[J]. Journal of Semiconductors, 2008, 29(3): 428-432.
****
Huang X D, Huang J Q, Qin M, Huang Q. A Novel Capacitive Pressure Sensor[J]. J. Semicond., 2008, 29(3): 428.
|
Journal of Semiconductors © 2017 All Rights Reserved 京ICP備05085259號-2