Chin. J. Semicond. > 2007, Volume 28?>?Issue 12?> 1957-1960

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An AlGaN-Based Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector

Ji Xiaoli, Jiang Ruolian, Zhou Jianjun, Liu Bin, Xie Zili, Han Ping, Zhang Rong, Zheng Youdou and Gong Haimei

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Abstract: AlGaN-based resonant-cavity-enhanced p-i-n photodetectors operating at a wavelength of 320nm were designed.A 40.5-pair AlN/Al0.3Ga0.7N distributed Bragg reflector and the air/GaN interface,serving as the back and front mirror,respectively,form a resonant cavity.In the cavity there is a p-GaN/ i-GaN/ n-Al0.38Ga0.62N structure.The wafer was fully epitaxial on the sapphire substrate and GaN template by metalorganic chemical vapor deposition.The response spectrum exhibits selective enhancement at 313nm,with a responsivity of 14mA/W under zero bias.

Key words: ultraviolet photodetector, resonant-cavity-enhanced, AlGaN, distributed Bragg reflector, transfer matrix method

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    Received: 18 August 2015 Revised: 13 July 2007 Online: Published: 01 December 2007

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      Ji Xiaoli, Jiang Ruolian, Zhou Jianjun, Liu Bin, Xie Zili, Han Ping, Zhang Rong, Zheng Youdou, Gong Haimei. An AlGaN-Based Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector[J]. Journal of Semiconductors, 2007, 28(12): 1957-1960. ****Ji X L, Jiang R L, Zhou J J, Liu B, Xie Z L, Han P, Zhang R, Zheng Y D, Gong H M. An AlGaN-Based Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector[J]. Chin. J. Semicond., 2007, 28(12): 1957.
      Citation:
      Ji Xiaoli, Jiang Ruolian, Zhou Jianjun, Liu Bin, Xie Zili, Han Ping, Zhang Rong, Zheng Youdou, Gong Haimei. An AlGaN-Based Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector[J]. Journal of Semiconductors, 2007, 28(12): 1957-1960. ****
      Ji X L, Jiang R L, Zhou J J, Liu B, Xie Z L, Han P, Zhang R, Zheng Y D, Gong H M. An AlGaN-Based Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector[J]. Chin. J. Semicond., 2007, 28(12): 1957.

      An AlGaN-Based Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector

      • Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Physics,Nanjing University,Nanjing 210093,China

      • Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200080,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-06-06
      • Revised Date: 2007-07-13
      • Published Date: 2007-11-28

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