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J. Semicond. > 2008, Volume 29?>?Issue 9?> 1692-1697

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Using 3D TCAD Simulation to Study Charge Collection of a p-n Junction in a 0.18μm Bulk Process

Liang Bin, Chen Shuming and Liu Biwei

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Abstract: Single event transient of a real p-n junction in a 0.18μm bulk process is studied by 3D TCAD simulation.The impact of voltage,temperature,substrate concentration,and LET on SET is studied.Our simulation results demonstrate that biases in the range 1.62 to 1.98V influence DSET current shape greatly and total collected charge weakly.Peak current and charge collection within 2ns decreases as temperature increases,and temperature has a stronger influence on SET currents than on total charge.Typical variation of substrate concentration in modern VDSM processes has a negligible effect on SEEs.Both peak current and total collection charge increases as LET increases.

Key words: charge collection, p-n junction, very deep sub-micro, 3D device simulation, radiation

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    Received: 18 August 2015 Revised: 07 May 2008 Online: Published: 01 September 2008

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      Liang Bin, Chen Shuming, Liu Biwei. Using 3D TCAD Simulation to Study Charge Collection of a p-n Junction in a 0.18μm Bulk Process[J]. Journal of Semiconductors, 2008, 29(9): 1692-1697. ****Liang B, Chen S M, Liu B W. Using 3D TCAD Simulation to Study Charge Collection of a p-n Junction in a 0.18μm Bulk Process[J]. J. Semicond., 2008, 29(9): 1692.
      Citation:
      Liang Bin, Chen Shuming, Liu Biwei. Using 3D TCAD Simulation to Study Charge Collection of a p-n Junction in a 0.18μm Bulk Process[J]. Journal of Semiconductors, 2008, 29(9): 1692-1697. ****
      Liang B, Chen S M, Liu B W. Using 3D TCAD Simulation to Study Charge Collection of a p-n Junction in a 0.18μm Bulk Process[J]. J. Semicond., 2008, 29(9): 1692.

      Using 3D TCAD Simulation to Study Charge Collection of a p-n Junction in a 0.18μm Bulk Process

      • Computer School,National University of Defense Technology,Changsha 410073,China

      • Computer School,National University of Defense Technology,Changsha 410073,China

      • Computer School,National University of Defense Technology,Changsha 410073,China

      • Received Date: 2015-08-18
      • Accepted Date: 2008-01-10
      • Revised Date: 2008-05-07
      • Published Date: 2008-09-03

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