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J. Semicond. > 2008, Volume 29?>?Issue 8?> 1475-1478

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Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Zhang Xiaomin, Wang Yanjie, Yang Ziwen, Liao Hui, Chen Weihua, Li Ding, Li Rui, Yang Zhijian, Zhang Guoyi and Hu Xiaodong

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Abstract: p-type conductivity and crystal quality of Mg-doped GaN grown by MOCVD have been improved through optimization of the magnesium flow rate.The hole concentration first increased and then decreased with the magnesium flow rate while the mobility decreased monotonously.The optimum sample reached a hole concentration of 4.1E17cm-3 and a resistivity of 1Ω·cm.Based on a self-compensation model involving the deep donor MGaVN,we calculate the hole concentration as a function of magnesium doping concentration NA,which indicates that the self-compensation coefficient increases with NA;the hole concentration first increases with NA and reaches a maximum at NA≈4E19,then decreases rapidly as doping concentration increases.XRD also indicate that dislocation density decreased as magnesium flow rate decreased.

Key words: p-GaN, self-compensation, magnesium doping, MOCVD

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    Received: 18 August 2015 Revised: 24 December 2007 Online: Published: 01 August 2008

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      Zhang Xiaomin, Wang Yanjie, Yang Ziwen, Liao Hui, Chen Weihua, Li Ding, Li Rui, Yang Zhijian, Zhang Guoyi, Hu Xiaodong. Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN[J]. Journal of Semiconductors, 2008, 29(8): 1475-1478. ****Zhang X M, Wang Y J, Yang Z W, Liao H, Chen W H, Li D, Li R, Yang Z J, Zhang G Y, Hu X D. Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN[J]. J. Semicond., 2008, 29(8): 1475.
      Citation:
      Zhang Xiaomin, Wang Yanjie, Yang Ziwen, Liao Hui, Chen Weihua, Li Ding, Li Rui, Yang Zhijian, Zhang Guoyi, Hu Xiaodong. Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN[J]. Journal of Semiconductors, 2008, 29(8): 1475-1478. ****
      Zhang X M, Wang Y J, Yang Z W, Liao H, Chen W H, Li D, Li R, Yang Z J, Zhang G Y, Hu X D. Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN[J]. J. Semicond., 2008, 29(8): 1475.

      Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • National Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Research Center for Wide Gap Semiconductor,School of Physics,Peking University,Beijing 100871,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-11-02
      • Revised Date: 2007-12-24
      • Published Date: 2008-08-02

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