Abstract: SnS:Ag thin films were deposited on ITO by pulse electro-deposition.They were characterized with X-ray diffraction spectroscopy and atomic force microscope.The as-deposited films have a new phase (Ag8SnS6) with good crystallization and big grain size.The conductivity of the films was measured by photoelectrochemical test.It is proved that the SnS:Ag films are p-type of semiconductor.Hall measurement shows that the carrier concentration of the films increases,while their resistivity decreases after Ag-doping.

Key words: pulse electrodeposition, SnS:Ag thin films, electrical and optical properties