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J. Semicond. > 2008, Volume 29?>?Issue 3?> 534-538

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Evaluation of the Composition Profile of HgCdTe LPE Films by IR Transmission Spectrum

Gu Renjie, Zhang Chuanjie, Yang Jianrong, Chen Xinqiang and Wei Yanfeng

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Abstract: The longitudinal composition profiles of HgCdTe LPE films based on infrared transmission spectra are evaluated.The infrared transmission spectra are simulated theoretically using the composition profile model proposed by Wang Qingxue,taking the interference effect of the light during propagation in the composition gradient region of HgCdTe LPE films into consideration.A set of infrared transmission spectrum curves of the samples with the same growth number but different HgCdTe layer thicknesses are used to check the reliability of the calculation method.The results show that all the experimental curves can be fitted theoretically.Next,a method to determine the 4 simulation parameters (HgCdTe epilayer thickness,composition gradient region thickness,surface composition,and composition slope in the epilayer) used in theoretical calculation is discussed and the precisions of these parameters are determined.The results show that the theoretical simulation of the infrared transmission spectra is effective to evaluate the longitudinal composition profiles of the HgCdTe LPE films.

Key words: HgCdTe, LPE, infrared transmission spectrum, longitudinal composition profiles

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    Received: 18 August 2015 Revised: 24 October 2007 Online: Published: 01 March 2008

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      Gu Renjie, Zhang Chuanjie, Yang Jianrong, Chen Xinqiang, Wei Yanfeng. Evaluation of the Composition Profile of HgCdTe LPE Films by IR Transmission Spectrum[J]. Journal of Semiconductors, 2008, 29(3): 534-538. ****Gu R J, Zhang C J, Yang J R, Chen X Q, Wei Y F. Evaluation of the Composition Profile of HgCdTe LPE Films by IR Transmission Spectrum[J]. J. Semicond., 2008, 29(3): 534.
      Citation:
      Gu Renjie, Zhang Chuanjie, Yang Jianrong, Chen Xinqiang, Wei Yanfeng. Evaluation of the Composition Profile of HgCdTe LPE Films by IR Transmission Spectrum[J]. Journal of Semiconductors, 2008, 29(3): 534-538. ****
      Gu R J, Zhang C J, Yang J R, Chen X Q, Wei Y F. Evaluation of the Composition Profile of HgCdTe LPE Films by IR Transmission Spectrum[J]. J. Semicond., 2008, 29(3): 534.

      Evaluation of the Composition Profile of HgCdTe LPE Films by IR Transmission Spectrum

      • Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • Research Center for Advanced Materials and Devices,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-07-11
      • Revised Date: 2007-10-24
      • Published Date: 2008-02-28

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