Abstract: Hg3-3xIn2xTe3(MIT)(x=0.5） single crystals were successfully grown using the vertical Bridgman method (VB) and were investigated by XRD,RO-XRD,and Hall measurements.The results show that the as-grown crystal is high quality single-phase crystal.The wafer surface is (311) face,and the crystal face is located at θ=23.86°.The spatial deviation angle of the (311) face is φ=2.9°,and the degree of orientation scatter is FWHM=0.3°.The crystal is an n-type semiconductor.The resistivity,carrier concentration,and carrier mobility are 4.79e2Ω·cm,2.83e13cm-3,and 4.6e2cm2/(V·s),respectively.The Fermi level lies near the midgap and is about 8meV higher.The calculated values of the carrier concentration are in agreement with the experimental ones.

Key words: Hg3-3xIn2xTe3(MIT), crystal growth, vertical Bridgman method, photovoltaic semiconductors, NIR detector