Chin. J. Semicond. > 2007, Volume 28?>?Issue 9?> 1420-1423

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Recess-Gate AlGaN/GaN HFET

Zhang Zhiguo, Feng Zhen, Yang Mengli, Feng Zhihong, Mo Jianghui, Cai Shujun and Yang Kewu

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Abstract: A recessed gate AlGaN/GaN HFET with a total gate length of 100μm is studied.The device demonstrates an increase in transconductance from 260.3 to 314.8mS/mm compared to the unrecessed device,while the saturation current changes slightly.Moreover,the ideality is improved from 2.3 to 1.7.An output power density of 11.74W/mm is achieved at 8GHz and 40V using a load pull system.

Key words: AlGaN/GaN HFET, recessed gate, high voltage, high power density

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    Received: 18 August 2015 Revised: 28 April 2007 Online: Published: 01 September 2007

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      Zhang Zhiguo, Feng Zhen, Yang Mengli, Feng Zhihong, Mo Jianghui, Cai Shujun, Yang Kewu. Recess-Gate AlGaN/GaN HFET[J]. Journal of Semiconductors, 2007, 28(9): 1420-1423. ****Zhang Z G, Feng Z, Yang M L, Feng Z H, Mo J H, Cai S J, Yang K W. Recess-Gate AlGaN/GaN HFET[J]. Chin. J. Semicond., 2007, 28(9): 1420.
      Citation:
      Zhang Zhiguo, Feng Zhen, Yang Mengli, Feng Zhihong, Mo Jianghui, Cai Shujun, Yang Kewu. Recess-Gate AlGaN/GaN HFET[J]. Journal of Semiconductors, 2007, 28(9): 1420-1423. ****
      Zhang Z G, Feng Z, Yang M L, Feng Z H, Mo J H, Cai S J, Yang K W. Recess-Gate AlGaN/GaN HFET[J]. Chin. J. Semicond., 2007, 28(9): 1420.

      Recess-Gate AlGaN/GaN HFET

      • The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • School of Microelectronics,Xidian University,Xi′an 710071,China

      • The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China

      • National Key Laboratory of ASIC,Shijiazhuang 050051,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-03-20
      • Revised Date: 2007-04-28
      • Published Date: 2007-08-31

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