Chin. J. Semicond. > 2007, Volume 28?>?Issue 2?> 213-216

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Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals

Zhang Xiaoying, Chen Songyan, Lai Hongkai, Li Cheng and Yu Jinzhong

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Abstract: Si/Si bonding has been achieved at low temperatures by introducing Ti/Au layers.The bonding temperature can be reduced to 414℃.The Si/Si bonding strength has been investigated by tensile strength.The results show that the bonding strength exceeds 1.27MPa.I-V tests show that the interface of Si/Ti/Au/Ti/Si is an ohmic contact,and XPS tests indicate that the interface mainly comprises Si-Au eutectic alloy.Different experiments by annealing at gradually changing temperature show that the higher the bonding temperature is,the stronger the bonding energy is.In addition,annealing at gradually changing temperature is propitious to increase bonding strength.

Key words: wafer bonding,  interface characteristic,  intermediate metals,  bonding mechanism

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    Received: 18 August 2015 Revised: 07 November 2006 Online: Published: 01 February 2007

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      Zhang Xiaoying, Chen Songyan, Lai Hongkai, Li Cheng, Yu Jinzhong. Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals[J]. Journal of Semiconductors, 2007, 28(2): 213-216. ****Zhang X Y, Chen S Y, Lai H K, Li C, Yu J Z. Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals[J]. Chin. J. Semicond., 2007, 28(2): 213.
      Citation:
      Zhang Xiaoying, Chen Songyan, Lai Hongkai, Li Cheng, Yu Jinzhong. Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals[J]. Journal of Semiconductors, 2007, 28(2): 213-216. ****
      Zhang X Y, Chen S Y, Lai H K, Li C, Yu J Z. Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals[J]. Chin. J. Semicond., 2007, 28(2): 213.

      Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals

      • Department of Physics,Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China

      • Department of Physics,Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China

      • Department of Physics,Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China

      • Department of Physics,Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China

      • Department of Physics,Semiconductor Photonics Research Center,Xiamen University,Xiamen 361005,China

      • State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-07-07
      • Revised Date: 2006-11-07
      • Published Date: 2007-01-30

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