Chin. J. Semicond. > 2007, Volume 28?>?Issue 1?> 60-64

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Effects of the Heat Transfer Through Powder Source on the Silicon Carbide Crystal Growth by PVT

Zhang Qunshe, Chen Zhiming, Li Liuchen, Yang Feng, Pu Hongbin and Feng Xianfeng

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Abstract: Influences of different porosities in SiC powder source on as-grown crystal are investigated.The temperature distributions in the powder and growth chamber are analyzed for powder sources with different porosities.Combining these results with growth experiments,the relation between the isothermal line and the surface shape of as-grown crystal is also discussed.All simulated and experimental results indicate that the crystal surface shape is determined directly by isothermality in the growth chamber,and that more porosity in the powder is propitious to the evaporation of powder and crystal growth.

Key words: SiC powder, PVT method, temperature distribution, porosity

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    Received: 18 August 2015 Revised: 10 August 2006 Online: Published: 01 January 2007

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      Zhang Qunshe, Chen Zhiming, Li Liuchen, Yang Feng, Pu Hongbin, Feng Xianfeng. Effects of the Heat Transfer Through Powder Source on the Silicon Carbide Crystal Growth by PVT[J]. Journal of Semiconductors, 2007, 28(1): 60-64. ****Zhang Q S, Chen Z M, Li L C, Yang F, Pu H B, Feng X F. Effects of the Heat Transfer Through Powder Source on the Silicon Carbide Crystal Growth by PVT[J]. Chin. J. Semicond., 2007, 28(1): 60.
      Citation:
      Zhang Qunshe, Chen Zhiming, Li Liuchen, Yang Feng, Pu Hongbin, Feng Xianfeng. Effects of the Heat Transfer Through Powder Source on the Silicon Carbide Crystal Growth by PVT[J]. Journal of Semiconductors, 2007, 28(1): 60-64. ****
      Zhang Q S, Chen Z M, Li L C, Yang F, Pu H B, Feng X F. Effects of the Heat Transfer Through Powder Source on the Silicon Carbide Crystal Growth by PVT[J]. Chin. J. Semicond., 2007, 28(1): 60.

      Effects of the Heat Transfer Through Powder Source on the Silicon Carbide Crystal Growth by PVT

      • Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048,China

      • Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048,China

      • Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048,China

      • Xi’an Jiaotong University,Xi’an 710048,China

      • Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048,China

      • Department of Electronic Engineering,Xi’an University of Technology,Xi’an 710048,China

      • Received Date: 2015-08-18
      • Accepted Date: 2006-07-20
      • Revised Date: 2006-08-10
      • Published Date: 2006-12-26

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