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J. Semicond. > 2008, Volume 29?>?Issue 3?> 521-525

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Influence of Threading Dislocations on the Luminescence Efficiency of GaN Heteroepitaxial Layers

Gao Zhiyuan, Hao Yue, Li Peixian and Zhang Jincheng

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Abstract: We study the relationship between microstructure and luminescence efficiency for GaN heteroepitaxial films by cathodoluminescence (CL),transmission electron microscopy,and X-ray diffraction.Even though threading dislocations in GaN epitaxial layers have been demonstrated to be effective nonradiative recombination centers,the CL band edge peak intensity does not decrease as the dislocation density increases.The luminescence efficiency of GaN is found to be affected both by the grain size of the mosaic structural GaN formed by two-step growth and by the bend extent of dislocations formed during the coalescence of sub-grains.

Key words: GaN, threading dislocation, nonradiative recombination, luminescence efficiency

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    Received: 18 August 2015 Revised: 10 October 2007 Online: Published: 01 March 2008

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      Gao Zhiyuan, Hao Yue, Li Peixian, Zhang Jincheng. Influence of Threading Dislocations on the Luminescence Efficiency of GaN Heteroepitaxial Layers[J]. Journal of Semiconductors, 2008, 29(3): 521-525. ****Gao Z Y, Hao Y, Li P X, Zhang J C. Influence of Threading Dislocations on the Luminescence Efficiency of GaN Heteroepitaxial Layers[J]. J. Semicond., 2008, 29(3): 521.
      Citation:
      Gao Zhiyuan, Hao Yue, Li Peixian, Zhang Jincheng. Influence of Threading Dislocations on the Luminescence Efficiency of GaN Heteroepitaxial Layers[J]. Journal of Semiconductors, 2008, 29(3): 521-525. ****
      Gao Z Y, Hao Y, Li P X, Zhang J C. Influence of Threading Dislocations on the Luminescence Efficiency of GaN Heteroepitaxial Layers[J]. J. Semicond., 2008, 29(3): 521.

      Influence of Threading Dislocations on the Luminescence Efficiency of GaN Heteroepitaxial Layers

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

      • Received Date: 2015-08-18
      • Accepted Date: 2007-08-28
      • Revised Date: 2007-10-10
      • Published Date: 2008-02-28

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